We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BSC080N03MSGATMA1 DISTI # V72:2272_06390943 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 779In Stock |
|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 779In Stock |
|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC080N03MSGATMA1 DISTI # 31084156 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP - Tape and Reel (Alt: BSC080N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC080N03MSGATMA1 DISTI # 60R2503 | Infineon Technologies AG | MOSFET, N CHANNEL, 30V, 53A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:53A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 0 | |
| BSC080N03MSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| BSC080N03MS G DISTI # 726-BSC080N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M RoHS: Compliant | 0 |
|
| BSC080N03MSGATMA1 DISTI # 7545288P | Infineon Technologies AG | MOSFET N-CHANNEL 30V 13A OPTIMOS3 TDSON8, RL | 1620 |
|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,53A,35W,PG-TDSON-8 | 550 |
|
| BSC080N03MSGATMA1 DISTI # 1775456 | Infineon Technologies AG | MOSFET, N CH, 53A, 30V, PG-TDSON-8 RoHS: Compliant | 0 |
|
| BSC080N03MSGATMA1 DISTI # C1S322000595914 | Infineon Technologies AG | MOSFETs RoHS: Compliant | 5000 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: BSC080N03LSGATMA1 OMO.#: OMO-BSC080N03LSGATMA1 |
MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC080N03MS G OMO.#: OMO-BSC080N03MS-G |
MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M |
|
|
Mfr.#: BSC080N03MSGATMA1 OMO.#: OMO-BSC080N03MSGATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC080N03LS OMO.#: OMO-BSC080N03LS-1190 |
全新原裝 |
|
|
Mfr.#: BSC080N03LSG OMO.#: OMO-BSC080N03LSG-1190 |
14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
|
Mfr.#: BSC080N03LSGATMA1 |
MOSFET N-CH 30V 53A TDSON-8 |
|
|
Mfr.#: BSC080N03MSG OMO.#: OMO-BSC080N03MSG-1190 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC080N03MSGATMA1 |
MOSFET N-CH 30V 53A TDSON-8 |
|
|
Mfr.#: BSC080N03NMS OMO.#: OMO-BSC080N03NMS-1190 |
全新原裝 |
|
|
Mfr.#: BSC080N03LSGATMA1-CUT TAPE |
全新原裝 |
