IXGH10N170

IXGH10N170
Mfr. #:
IXGH10N170
製造商:
Littelfuse
描述:
IGBT Transistors 20 Amps 1700 V 4 V Rds
生命週期:
製造商新產品
數據表:
IXGH10N170 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXGH10N170 DatasheetIXGH10N170 Datasheet (P4-P5)
ECAD Model:
產品屬性
屬性值
製造商:
IXYS
產品分類:
IGBT晶體管
RoHS:
Y
技術:
包裝/案例:
TO-247AD-3
安裝方式:
通孔
配置:
單身的
集電極-發射極電壓 VCEO 最大值:
1700 V
最大柵極發射極電壓:
20 V
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
系列:
IXGH10N170
打包:
管子
連續集電極電流 Ic 最大值:
20 A
高度:
21.46 mm
長度:
16.26 mm
寬度:
5.3 mm
品牌:
IXYS
產品類別:
IGBT晶體管
出廠包裝數量:
30
子類別:
IGBT
單位重量:
0.229281 oz
Tags
IXGH10N1, IXGH10N, IXGH10, IXGH1, IXGH, IXG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
IXGH Series 1700 Vce 10 A 30 ns t(on) High Voltage IGBT - TO-247AD
***i-Key
IGBT 1700V 20A 110W TO247
***S
new, original packaged
***el Nordic
Contact for details
***roFlash
Insulated Gate Bipolar Transistor, 20A I(C), 1700V V(BR)CES, N-Channel, TO-247AD
***i-Key
IGBT 1700V 20A 140W TO247AD
***ure Electronics
IGBT Transistors 10 Amps 1700V 2.3 Rds
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 1200V 20A 100000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH30 Series 1200 V 20 A Through Hole UltraFast IGBT - TO-247AC
***el Electronic
Inductor RF Chip Thin Film 4.1nH 0.1nH 500MHz 14Q-Factor 350mA 400mOhm DCR 0201 T/R
***ineon SCT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 4.2 V Current release time: 330 ns Power dissipation: 100 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:23ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***el Electronic
Inductor RF Chip Thin Film 4.2nH 0.1nH 500MHz 14Q-Factor 350mA 400mOhm DCR 0201 T/R
***ure Electronics
IRG4PH30KDPBF Series 1200 V 10 A N-Channel UltraFast IGBT - TO-247AC
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
SINGLE IGBT, 1.2KV, 20A; Transistor Type; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Typ:97ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:79ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 20A 85000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
IXYS SEMICONDUCTOR IXA12IF1200HB IGBT Single Transistor, 20 A, 2.1 V, 85 W, 1.2 kV, TO-247AD, 3 Pins
***ment14 APAC
IGBT,1200V,20A,TO-247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:85W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:85W
***ical
Trans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(3+Tab) TO-247AD
***ure Electronics
IXBH Series Single 1700 V 16 A 15 ns t(on) Bipolar Mos Transistor - TO-247AD
***ource
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
***S
French Electronic Distributor since 1988
***ical
Trans IGBT Chip N-CH 1200V 15A 89000mW 3-Pin(3+Tab) TO-247AC Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***ark
TUBE / G8, 1200V, 8A, COPAK-247AC
*** Electronic Components
IGBT Transistors 1200V IGBT GEN8
***el Electronic
CAP CER 3300PF 100V NP0 RADIAL
型號 製造商 描述 庫存 價格
IXGH10N170
DISTI # IXGH10N170-ND
IXYS CorporationIGBT 1700V 20A 110W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$5.6180
IXGH10N170A
DISTI # IXGH10N170A-ND
IXYS CorporationIGBT 1700V 10A 140W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$5.8980
IXGH10N170
DISTI # 747-IXGH10N170
IXYS CorporationIGBT Transistors 20 Amps 1700 V 4 V Rds
RoHS: Compliant
33
  • 1:$6.8500
  • 10:$6.1700
  • 25:$5.6200
  • 50:$5.1300
  • 100:$5.0700
  • 250:$4.6200
  • 500:$4.2500
  • 1000:$3.7000
IXGH10N170A
DISTI # 747-IXGH10N170A
IXYS CorporationIGBT Transistors 20 Amps 1700 V 7 V Rds
RoHS: Compliant
43
  • 1:$7.1900
  • 10:$6.4700
  • 25:$5.9000
  • 50:$5.3900
  • 100:$5.3200
  • 250:$4.8500
  • 500:$4.4600
  • 1000:$3.8800
圖片 型號 描述
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Mfr.#: KDZVTFTR3.0B

OMO.#: OMO-KDZVTFTR3-0B

Zener Diodes 3-3.4V 40mA SOD-123FL; PMDU
PDZVTR15B

Mfr.#: PDZVTR15B

OMO.#: OMO-PDZVTR15B

Zener Diodes 1000mW Pd SOD-128 PMDTM 15Vz(V) Min
FGD5T120SH

Mfr.#: FGD5T120SH

OMO.#: OMO-FGD5T120SH

IGBT Transistors 1200V 5A Field Stop Trench IGBT
VS-8EWS16SLHM3

Mfr.#: VS-8EWS16SLHM3

OMO.#: OMO-VS-8EWS16SLHM3

Rectifiers 8A If, 1600V Vr TO-252AA (DPAK)
S3N

Mfr.#: S3N

OMO.#: OMO-S3N

Rectifiers 3A, 1200V Surface Mount Rectifier
REF3433IDBVR

Mfr.#: REF3433IDBVR

OMO.#: OMO-REF3433IDBVR

Voltage References REF3433 - 20 PPM/C IQ 85UA 3.3V
ATTINY412-SSFR

Mfr.#: ATTINY412-SSFR

OMO.#: OMO-ATTINY412-SSFR

8-bit Microcontrollers - MCU 20MHz, 4KB, SOIC8, Ind 125C, Green, T&R
LVT12R0100FER

Mfr.#: LVT12R0100FER

OMO.#: OMO-LVT12R0100FER

Current Sense Resistors - SMD 0.01 ohm 1% 1.0W Current Sense
KDZVTFTR3.0B

Mfr.#: KDZVTFTR3.0B

OMO.#: OMO-KDZVTFTR3-0B-ROHM-SEMI

ZENER DIODES (CORRESPONDS TO AEC
ATTINY412-SSFR

Mfr.#: ATTINY412-SSFR

OMO.#: OMO-ATTINY412-SSFR-MICROCHIP-TECHNOLOGY

MCU 8-bit AVR RISC 4KB Flash 3.3V/5V 8-Pin SOIC N T/R
可用性
庫存:
Available
訂購:
1984
輸入數量:
IXGH10N170的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$6.85
US$6.85
10
US$6.17
US$61.70
25
US$5.62
US$140.50
50
US$5.13
US$256.50
100
US$5.07
US$507.00
250
US$4.62
US$1 155.00
500
US$4.25
US$2 125.00
1000
US$3.70
US$3 700.00
2500
US$3.65
US$9 125.00
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