OMO ElectronicOMO Electronic
Expand menu
您好，登錄我的帳戶
0 購物車

MJE5852G

MJE5852G
Mfr. #:
MJE5852G
製造商:
ON Semiconductor
描述:
Bipolar Transistors - BJT 8A 400V 80W PNP
生命週期:
製造商新產品
數據表:
MJE5852G 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJE5852G DatasheetMJE5852G Datasheet (P4-P6)MJE5852G Datasheet (P7-P8)
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
雙極晶體管 - BJT
RoHS：
Y
安裝方式：
通孔
包裝/案例：
TO-220-3
晶體管極性：
PNP
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
400 V
集電極-基極電壓 VCBO：
450 V
發射極基極電壓 VEBO：
6 V
集電極-發射極飽和電壓：
2 V
最大直流集電極電流：
8 A
最低工作溫度：
- 65 C
最高工作溫度：
+ 150 C
系列：
MJE5852
高度：
15.75 mm
長度：
10.53 mm
打包：
管子
寬度：
4.83 mm
品牌：
安森美半導體
連續集電極電流：
8 A
DC 集電極/基極增益 hfe 最小值：
15
Pd - 功耗：
80 W
產品類別：
BJT - 雙極晶體管
出廠包裝數量：
50
子類別：
晶體管
單位重量：
0.211644 oz
Tags
MJE58, MJE5, MJE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
ON Semi MJE5852G PNP High Voltage Bipolar Transistor; 8 A; 400 V; 3-Pin TO-220AB
***ical
Trans GP BJT PNP 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
MJE Series 400 V 8 A SWITCHMODE™ Series PNP Silicon Power Transistor - TO-220AB
***emi
8.0 A, 400 V PNP Bipolar Power Transistor
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***enic
400V 80W 8A 5@5A5V 5V@8A3A PNP -65¡Í~+150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
***nell
TRANSISTOR, PNP, TO-220AB; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 15hFE; Transistor Case Style:
***ark
RF TRANSISTOR, PNP, -400V, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:400V; Continuous Collector Current:8A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
***th Star Micro
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
***enic
350V 80W 8A 5@5A5V PNP 5V@8A3A -65¡Í~+150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
***Yang
Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***emi
8.0 A, 350 V PNP Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ment14 APAC
BIPOLAR TRANSISTOR, PNP, -350V, TO-220;
***th Star Micro
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
***emi
8.0 A, 300 V PNP Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***el Electronic
RES SMD 7.68K OHM 1% 1/2W 1206
***(Formerly Allied Electronics)
Transistor, Bipolar, Si, PNP, Power, VCEO 300VDC, IC 8A, PD 80W, TO-220AB, hFE 5
***enic
300V 80W 8A PNP TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
***ical
Trans GP BJT PNP 300V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
MJE Series 300 V 8 A SWITCHMODE™ Series PNP Silicon Power Transistor - TO-220AB
***emi
8.0 A, 300 V PNP Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***nell
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Cu; Available until stocks are exhausted Alternative available
***th Star Micro
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
型號 製造商 描述 庫存 價格
MJE5852G
DISTI # V36:1790_07283642		ON SemiconductorTrans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		648
  • 1000:$1.2926
  • 500:$1.5340
  • 100:$1.7273
  • 50:$2.0979
  • 1:$2.4084
MJE5852G
DISTI # V99:2348_07283642		ON SemiconductorTrans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		369
  • 1000:$1.2926
  • 500:$1.5340
  • 100:$1.7273
  • 50:$2.0979
  • 1:$2.4084
MJE5852G
DISTI # MJE5852GOS-ND		ON SemiconductorTRANS PNP 400V 8A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		18In Stock
  • 1000:$1.4063
  • 500:$1.6973
  • 100:$2.0659
  • 50:$2.4248
  • 1:$2.8600
MJE5852G
DISTI # 30534971		ON SemiconductorTrans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		648
  • 500:$1.5340
  • 100:$1.7273
  • 50:$2.0979
  • 7:$2.4084
MJE5852G
DISTI # 30587790		ON SemiconductorTrans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		373
  • 100:$2.0272
  • 50:$2.4352
  • 10:$2.7412
  • 8:$3.5955
MJE5852G
DISTI # 30276818		ON SemiconductorTrans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		369
  • 100:$1.7273
  • 50:$2.0979
  • 6:$2.4084
MJE5852G
DISTI # 31291194		ON SemiconductorTrans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		250
  • 500:$1.4784
  • 250:$1.5840
  • 100:$1.6608
  • 50:$1.7280
MJE5852G
DISTI # MJE5852G		ON SemiconductorTrans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Rail (Alt: MJE5852G)
RoHS: Compliant
Min Qty: 50		Europe - 1400
  • 1:€2.3500
  • 10:€1.9900
  • 100:€1.6000
  • 250:€1.5000
  • 500:€1.4000
  • 1000:€1.0800
MJE5852G
DISTI # MJE5852G		ON SemiconductorTrans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: MJE5852G)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$1.1900
  • 10:$1.1900
  • 25:$1.1900
  • 50:$1.1900
  • 100:$1.1900
  • 500:$1.1900
  • 1000:$1.1900
MJE5852G
DISTI # 26K4469		ON SemiconductorTrans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 26K4469)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$3.0800
  • 10:$2.6300
  • 100:$2.1300
  • 500:$1.8700
  • 1000:$1.5600
MJE5852G
DISTI # 26K4469		ON SemiconductorRF TRANSISTOR, PNP, -400V, TO-220,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:400V,Transition Frequency ft:-,Power Dissipation Pd:80W,DC Collector Current:8A,DC Current Gain hFE:15hFE,No. of Pins:3Pins,MSL:- RoHS Compliant: Yes47
  • 1:$3.0800
  • 10:$2.6300
  • 100:$2.1300
  • 500:$1.8700
  • 1000:$1.5600
MJE5852G
DISTI # 70100018		ON SemiconductorON Semi MJE5852G PNP High Voltage Bipolar Transistor,8 A,400 V,3-Pin TO-220AB
RoHS: Compliant		0
  • 1:$1.4990
MJE5852GON SemiconductorMJE Series 400 V 8 A SWITCHMODE Series PNP Silicon Power Transistor - TO-220AB
RoHS: Compliant		36Tube
  • 10:$2.1300
  • 50:$1.6200
  • 100:$1.5500
  • 250:$1.4500
  • 500:$1.3800
MJE5851G
DISTI # 863-MJE5851G		ON SemiconductorBipolar Transistors - BJT 8A 350V 80W PNP
RoHS: Compliant		292
  • 1:$2.9000
  • 10:$2.4700
  • 100:$1.9700
  • 500:$1.7300
  • 1000:$1.4300
MJE5852G
DISTI # 863-MJE5852G		ON SemiconductorBipolar Transistors - BJT 8A 400V 80W PNP
RoHS: Compliant		375
  • 1:$2.7200
  • 10:$2.3100
  • 100:$1.8500
  • 500:$1.6200
  • 1000:$1.3400
MJE5852
DISTI # 863-MJE5852		ON SemiconductorBipolar Transistors - BJT 8A 400V 80W PNP
RoHS: Not compliant		0
    MJE5852
    DISTI # 511-MJE5852    		STMicroelectronicsBipolar Transistors - BJT PNP High Voltage
    RoHS: Compliant    		0
      MJE5852GON Semiconductor 
      RoHS: Not Compliant      		26
      • 1000:$1.4300
      • 500:$1.5100
      • 100:$1.5700
      • 25:$1.6400
      • 1:$1.7700
      MJE5852G
      DISTI # 5450292      		ON SemiconductorTRANSISTOR PNP 400V 8A 80W TO220AB, EA300
      • 1:£2.0000
      • 10:£1.6500
      MJE5852GON Semiconductor 
      RoHS: Compliant      		Europe - 8
        MJE5852G
        DISTI # 9555889        		ON SemiconductorTRANSISTOR, PNP, TO-220AB
        RoHS: Compliant        		415
        • 1:£2.3300
        • 10:£1.7400
        • 100:£1.4000
        • 250:£1.3200
        • 500:£1.2300
        MJE5852GON SemiconductorSWITCHMODE Series PNP Silicon Power Transistors49
        • 1:$1.9500
        • 100:$1.5700
        • 500:$1.4500
        • 1000:$1.3700
        MJE5852G
        DISTI # 9555889        		ON SemiconductorTRANSISTOR, PNP, TO-220AB
        RoHS: Compliant        		1298
        • 1:$4.3100
        • 10:$3.6600
        • 100:$2.9300
        • 500:$2.5700
        • 1000:$2.1300
        MJE5852G
        DISTI # XSKDRABS0013091        		ON SEMICONDUCTOR 
        RoHS: Compliant        		1008
        • 450:$1.6600
        • 1008:$1.5500
        MJE5852G
        DISTI # C1S541901370105        		ON SemiconductorTrans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube
        RoHS: Compliant        		373
        • 100:$1.5900
        • 50:$1.9100
        • 10:$2.1500
        • 1:$2.8200
        MJE5852G
        DISTI # C1S541900354304        		ON SemiconductorTrans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube
        RoHS: Compliant        		250
        • 100:$2.0100
        • 50:$2.4400
        圖片 型號 描述
        MJE15032G

        Mfr.#: MJE15032G

        OMO.#: OMO-MJE15032G

        		 Bipolar Transistors - BJT 8A 250V 50W NPN
        MPSA18

        Mfr.#: MPSA18

        OMO.#: OMO-MPSA18

        		 Bipolar Transistors - BJT NPN Gen Pur SS
        MJE13007G

        Mfr.#: MJE13007G

        OMO.#: OMO-MJE13007G

        		 Bipolar Transistors - BJT 8A 400V 80W NPN
        MJE15033G

        Mfr.#: MJE15033G

        OMO.#: OMO-MJE15033G

        		 Bipolar Transistors - BJT 8A 250V 50W PNP
        1N914

        Mfr.#: 1N914

        OMO.#: OMO-1N914

        		 Diodes - General Purpose, Power, Switching 100V 4.0ns Diode Single Junction
        VS-30EPH06PBF

        Mfr.#: VS-30EPH06PBF

        OMO.#: OMO-VS-30EPH06PBF

        		 Rectifiers 600 Volt 30 Amp
        1N4002-E3/73

        Mfr.#: 1N4002-E3/73

        OMO.#: OMO-1N4002-E3-73

        		 Rectifiers Vr/100V Io/1A
        UPW1V100MDD1TD

        Mfr.#: UPW1V100MDD1TD

        OMO.#: OMO-UPW1V100MDD1TD

        		 Aluminum Electrolytic Capacitors - Radial Leaded 10uF 35 Volts 20%
        1N914

        Mfr.#: 1N914

        OMO.#: OMO-1N914-ON-SEMICONDUCTOR

        		 DIODE GEN PURP 100V 200MA DO35
        1N4002-E3/73

        Mfr.#: 1N4002-E3/73

        OMO.#: OMO-1N4002-E3-73-VISHAY

        		 Rectifiers Vr/100V Io/1A
        可用性
        庫存:
        653
        訂購:
        2636
        輸入數量:
        MJE5852G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$2.72
        US$2.72
        10
        US$2.31
        US$23.10
        100
        US$1.85
        US$185.00
        500
        US$1.62
        US$810.00
        1000
        US$1.34
        US$1 340.00
        由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
        從...開始
        Top