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STGW30NC60WD

STGW30NC60WD
Mfr. #:
STGW30NC60WD
製造商:
STMicroelectronics
描述:
IGBT Transistors PowerMESH&#34 IGBT
生命週期:
製造商新產品
數據表:
STGW30NC60WD 數據表
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更多信息:
STGW30NC60WD 更多信息 STGW30NC60WD Product Details
產品屬性
屬性值
製造商：
意法半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
2.1 V
最大柵極發射極電壓：
20 V
Pd - 功耗：
200 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
系列：
STGW30NC60WD
打包：
管子
連續集電極電流 Ic 最大值：
60 A
高度：
20.15 mm
長度：
15.75 mm
寬度：
5.15 mm
品牌：
意法半導體
連續集電極電流：
30 A
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
600
子類別：
IGBT
單位重量：
1.340411 oz
Tags
STGW30NC60W, STGW30NC6, STGW30NC, STGW30N, STGW30, STGW3, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
STMICROELECTRONICS STGW30NC60WD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
***nell
IGBT, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***(Formerly Allied Electronics)
STGW30NC60WD,IGBT Ultrafast 600V 30A
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***ical
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW35 Series 600 V 70 A Through Hole N-Channel Silicon IGBT - TO-247-3
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:250A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
*** Electronics
STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 30 Amp
***(Formerly Allied Electronics)
Transistor IGBT N-Ch 600V 60A TO247
***nell
IGBT, 600V, 20A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ical
Trans IGBT Chip N=-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail
***eco
600V SMPS Series N-Channel IGBT Transistor with Anti-Parallel Hyperfast Diode
***ure Electronics
HGTG12N60A4D Series 600 V 54 A Flange Mount SMPS N-Channel IGBT-TO-247
***rchild Semiconductor
The HGTG12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:54A; Current Temperature:25°C; Device Marking:HGTG12N60A4D; Fall Time tf:95ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:167W; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulsed Current Icm:96A; Rise Time:16ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
***ical
Trans IGBT Chip N-CH 600V 60A 181000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
V Series 600 V 60 A Through Hole Silicon IGBT - TO-247-3
***nell
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins
***et
Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247 Rail
***ark
Single Igbt, 600V, 54A; Continuous Collector Current:54A; Collector Emitter Saturation Voltage:2.7V; Power Dissipation:167W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes |Onsemi HGTG12N60A4
***rchild Semiconductor
The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
***ow.cn
Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***ment14 APAC
IGBT+ DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:187W
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.95 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 187 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
型號 製造商 描述 庫存 價格
STGW30NC60WD
DISTI # 32694828		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		1850
  • 500:$2.6235
  • 250:$2.9304
  • 100:$3.0888
  • 10:$3.5640
STGW30NC60WD
DISTI # 497-5204-5-ND		STMicroelectronicsIGBT 600V 60A 200W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		519In Stock
  • 2520:$2.2344
  • 510:$2.7818
  • 120:$3.2678
  • 30:$3.7707
  • 10:$3.9880
  • 1:$4.4400
STGW30NC60WD
DISTI # V36:1790_06560752		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    STGW30NC60WD
    DISTI # STGW30NC60WD    		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW30NC60WD)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Europe - 750
    • 1000:€2.1200
    • 500:€2.1600
    • 250:€2.4400
    • 100:€2.5700
    • 10:€2.6900
    • 1:€3.6600
    STGW30NC60WD
    DISTI # STGW30NC60WD    		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW30NC60WD)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 6000:$2.0383
    • 3600:$2.0808
    • 2400:$2.1774
    • 1200:$2.2800
    • 600:$2.3928
    STGW30NC60WD
    DISTI # 26M3562    		STMicroelectronicsTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube - Bulk (Alt: 26M3562)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 500:$3.3200
    • 250:$3.6300
    • 100:$3.7900
    • 50:$3.9500
    • 25:$4.1200
    • 10:$4.2800
    • 1:$4.9100
    STGW30NC60WD
    DISTI # 26M3562    		STMicroelectronicsIGBT, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:200W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:-RoHS Compliant: Yes0
    • 500:$3.1800
    • 250:$3.4800
    • 100:$3.6300
    • 50:$3.7900
    • 25:$3.9400
    • 10:$4.1000
    • 1:$4.7100
    STGW30NC60WD
    DISTI # 511-STGW30NC60WD    		STMicroelectronicsIGBT Transistors PowerMESH&#34 IGBT
    RoHS: Compliant    		260
    • 1:$4.2300
    • 10:$3.6000
    • 100:$3.1200
    • 250:$2.9600
    • 500:$2.6500
    • 1000:$2.2400
    • 2500:$2.1300
    STGW30NC60WDSTMicroelectronics*** FREE SHIPPING ORDERS OVER $100 *** INSULATED GATE BIPOLAR TRANSISTOR, 60A I(C), 600V V(BR)CES, N-CHANNEL, TO-247AC1104
    • 338:$1.3680
    • 118:$1.4820
    • 1:$3.4200
    STGW30NC60WD
    DISTI # 7959198P    		STMicroelectronicsSTGW30NC60WD IGBT ULTRAFAST 600V 30A, TU228
    • 600:£1.9100
    • 300:£2.1450
    • 90:£2.3750
    • 30:£2.6050
    STGW30NC60WD
    DISTI # 7959198    		STMicroelectronicsSTGW30NC60WD IGBT ULTRAFAST 600V 30A, PK100
    • 600:£1.9100
    • 300:£2.1450
    • 90:£2.3750
    • 30:£2.6050
    • 2:£3.2750
    STGW30NC60WDSTMicroelectronics 746
      STGW30NC60WD
      DISTI # STGW30NC60WD      		STMicroelectronicsTransistor: IGBT,600V,30A,200W,TO247-3101
      • 1:$3.6100
      • 3:$3.2600
      • 10:$2.6600
      • 30:$2.3100
      STGW30NC60WD
      DISTI # 1293659      		STMicroelectronicsIGBT, TO-247
      RoHS: Compliant      		118
      • 5000:$3.1600
      • 2500:$3.2800
      • 1000:$3.4500
      • 500:$4.0700
      • 250:$4.5500
      • 100:$4.8000
      • 10:$5.5400
      • 1:$6.5000
      STGW30NC60WD
      DISTI # 1293659      		STMicroelectronicsIGBT, TO-247148
      • 500:£2.1000
      • 250:£2.3500
      • 100:£2.4800
      • 10:£2.8500
      • 1:£3.7400
      STGW30NC60WD
      DISTI # XSKDRABS0032153      		STMicroelectronics 
      RoHS: Compliant      		360 in Stock0 on Order
      • 360:$2.4240
      • 330:$2.5920
      STGW30NC60WDSTMicroelectronicsInsulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC
      RoHS: Compliant      		Europe - 60
        STGW30NC60WD
        DISTI # IGBT1369        		STMicroelectronicsIGBT600V60A2.1VTO247-3Stock DE - 420Stock HK - 0Stock US - 0
        • 30:$2.2800
        • 60:$2.1400
        • 120:$2.1100
        • 180:$2.0700
        • 300:$1.9500
        STGW30NC60WD
        DISTI # STGW30NC60WD        		STMicroelectronics600V 60A 200W TO247
        RoHS: Compliant        		75
        • 5:€2.7000
        • 30:€2.3000
        • 120:€2.1000
        • 300:€2.0000
        圖片 型號 描述
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        OMO.#: OMO-VS-65EPS16LHM3

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        STW36N60M6

        Mfr.#: STW36N60M6

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        VS-65EPS16LHM3

        Mfr.#: VS-65EPS16LHM3

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        		 DIODES - TO-247-E3
        CRCW0603680KFKEAC

        Mfr.#: CRCW0603680KFKEAC

        OMO.#: OMO-CRCW0603680KFKEAC-VISHAY-DALE

        		 D11/CRCW0603-C 100 680K 1% ET1
        B43545B9227M000

        Mfr.#: B43545B9227M000

        OMO.#: OMO-B43545B9227M000-EPCOS

        		 400V 220UF ALUMINIUM SNAP IN CAPACITOR, BX
        CRCW060333R0FKEAC

        Mfr.#: CRCW060333R0FKEAC

        OMO.#: OMO-CRCW060333R0FKEAC-VISHAY-DALE

        		 D11/CRCW0603-C 100 33R 1% ET1
        可用性
        庫存:
        Available
        訂購:
        2000
        輸入數量:
        STGW30NC60WD的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$4.23
        US$4.23
        10
        US$3.60
        US$36.00
        100
        US$3.12
        US$312.00
        250
        US$2.96
        US$740.00
        500
        US$2.65
        US$1 325.00
        1000
        US$2.24
        US$2 240.00
        2500
        US$2.13
        US$5 325.00
        5000
        US$2.05
        US$10 250.00
        由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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