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CSD18504KCS

CSD18504KCS
Mfr. #:
CSD18504KCS
描述:
MOSFET 40V N-Ch NexFET Pwr MOSFET
生命週期:
製造商新產品
數據表:
CSD18504KCS 數據表
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更多信息:
CSD18504KCS 更多信息 CSD18504KCS Product Details
產品屬性
屬性值
製造商：
德州儀器
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
40 V
Id - 連續漏極電流：
100 A
Rds On - 漏源電阻：
8 mOhms
Vgs th - 柵源閾值電壓：
1.9 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
19 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
93 W
配置：
單身的
商品名：
場效應管
打包：
管子
高度：
16.51 mm
長度：
10.67 mm
系列：
CSD18504KCS
晶體管類型：
1 N-Channel
寬度：
4.7 mm
品牌：
德州儀器
正向跨導 - 最小值：
72 S
秋季時間：
4.2 ns
產品類別：
MOSFET
上升時間：
5.2 ns
出廠包裝數量：
50
子類別：
MOSFET
典型關斷延遲時間：
11.2 ns
典型的開啟延遲時間：
4.4 ns
單位重量：
0.211644 oz
Tags
CSD18504, CSD1850, CSD185, CSD18, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
40-V, N channel NexFET™ power MOSFET, single TO-220, 7 mOhm 3-TO-220 -55 to 175
***ical
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube
*** Stop Electro
Power Field-Effect Transistor, 53A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
***nell
MOSFET, N-CH, 40V, 100A, 3-TO220; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 40V; Résistance Rds(on): 0.0055ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 1.9V; Dissipation de puissance P
***ment14 APAC
MOSFET, N-CH, 40V, 100A, 3-TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:93W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
***ure Electronics
N-Channel 30 V 0.005 O Flange Mount STripFET™ V Power MOSFET - TO-220
***icroelectronics
N-channel 30 V, 0.0042 Ohm , 80 A, TO-220; Power MOSFETs
***nell
MOSFET, N CH, 30V, 80A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 70W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 80A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 22V; Voltage Vgs Rds on Measurement: 10V
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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30V 90A 150W 6.5m´Î@10V45A 2.5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***ponent Stockers USA
90 A 30 V 0.0065 ohm N-CHANNEL Si POWER MOSFET TO-220AB
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Power Field-Effect Transistor, 90A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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N-channel 30 V, 0.0042 Ohm, 75 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET
***ical
Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) TO-220AB Tube
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***ure Electronics
Single N-Channel 40 V 3.9 mOhm 59 nC OptiMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 40V 80A 3-Pin(3+Tab) TO-220 Tube
*** Stop Electro
Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO220-3, RoHS
***ment14 APAC
MOSFET, N CH, 80A, 40V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; Current Id Max:80A; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 3.9 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 5.4 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 94
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
***ure Electronics
Single N-Channel 40 V 4.1 mOhm 42 nC OptiMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 40V 80A 3-Pin(3+Tab) TO-220 Tube
***el Electronic
INFINEON - IPP041N04NGXKSA1 - MOSFET, N CH, 80A, 40V, PG-TO220-3
*** Stop Electro
Power Field-Effect Transistor, 80A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO220-3, RoHS
***ment14 APAC
MOSFET, N CH, 80A, 40V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:94W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 4.1 / Gate-Source Voltage V = 20 / Fall Time ns = 4.8 / Rise Time ns = 3.8 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 94
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
***ical
Trans MOSFET N-CH 40V 70A 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO220-3, RoHS
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
***AS INSTRUMENTS INCORPORATED
This 40 V, 5.5 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
型號 描述 庫存 價格
CSD18504KCS
DISTI # V39:1801_07248820		Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		129
  • 2500:$0.5795
  • 1000:$0.6269
  • 500:$0.8008
  • 100:$0.9427
  • 50:$1.1976
  • 10:$1.2193
  • 1:$1.5772
CSD18504KCS
DISTI # V36:1790_07248820		Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 1000:$0.5114
CSD18504KCS
DISTI # 296-35578-5-ND		MOSFET N-CH 40V TO220-3
Min Qty: 1
Container: Tube		128In Stock
  • 5000:$0.5865
  • 2500:$0.6174
  • 1000:$0.6615
  • 500:$0.8379
  • 100:$1.0143
  • 50:$1.2348
  • 10:$1.3010
  • 1:$1.4600
CSD18504KCS
DISTI # 26595707		Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		129
  • 2500:$0.5649
  • 1000:$0.6269
  • 500:$0.8008
  • 100:$0.9427
  • 50:$1.1976
  • 12:$1.2193
CSD18504KCS
DISTI # CSD18504KCS		Trans MOSFET N-CH 40V 85A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: CSD18504KCS)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 6000:$0.5533
  • 3000:$0.5690
  • 1800:$0.5888
  • 1200:$0.6091
  • 600:$0.6401
CSD18504KCS
DISTI # CSD18504KCS		Trans MOSFET N-CH 40V 85A 3-Pin(3+Tab) TO-220 Tube (Alt: CSD18504KCS)
Min Qty: 50
Container: Tube		Europe - 0
  • 500:€0.5429
  • 300:€0.5819
  • 200:€0.6789
  • 100:€0.7409
  • 50:€0.9059
CSD18504KCS
DISTI # 55W6153		MOSFET, N CHANNEL, 40V, 100A, 0.0055OHM, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:93WRoHS Compliant: Yes
RoHS: Compliant		311
  • 1:$0.4470
  • 10:$0.4470
  • 100:$0.4470
  • 500:$0.4470
  • 1000:$0.4470
  • 2500:$0.4470
  • 10000:$0.4470
CSD18504KCS .
DISTI # 63W3705		MOSFET Transistor, N Channel, 100 A, 40 V, 0.0055 ohm, 10 V, 1.9 V RoHS Compliant: Yes
RoHS: Compliant		50
  • 1:$0.2900
  • 10:$0.2900
  • 100:$0.2900
  • 500:$0.2900
  • 1000:$0.2900
  • 2500:$0.2900
  • 10000:$0.2900
CSD18504KCS40V, N ch NexFET MOSFET™, single TO-220, 7mOhm3001
  • 1000:$0.5000
  • 750:$0.5500
  • 500:$0.6700
  • 250:$0.7900
  • 100:$0.8600
  • 25:$0.9900
  • 10:$1.0600
  • 1:$1.1900
CSD18504KCS
DISTI # 595-CSD18504KCS		MOSFET 40V N-Ch NexFET Pwr MOSFET
RoHS: Compliant		564
  • 1:$1.4500
  • 10:$1.2300
  • 100:$0.9480
  • 500:$0.8370
  • 1000:$0.6610
  • 2500:$0.5860
  • 10000:$0.5640
CSD18504KCSPower Field-Effect Transistor, 53A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
RoHS: Compliant		8350
  • 1000:$0.5800
  • 500:$0.6100
  • 100:$0.6400
  • 25:$0.6700
  • 1:$0.7200
CSD18504KCS
DISTI # CSD18504KCS		Transistor: N-MOSFET,unipolar,40V,100A,115W,TO220-339
  • 3:$1.0800
  • 1:$1.4600
CSD18504KCS .
DISTI # 2289409		MOSFET, N-CH, 40V, 100A, 3-TO220348
  • 500:£0.5400
  • 250:£0.5770
  • 100:£0.6130
  • 25:£0.7950
  • 5:£0.9310
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Mfr.#: TPS54335ADDAR

OMO.#: OMO-TPS54335ADDAR

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Mfr.#: ERJ-3EKF1001V

OMO.#: OMO-ERJ-3EKF1001V

 Thick Film Resistors - SMD 0603 1Kohms 1% AEC-Q200
ERJ-3EKF4700V

Mfr.#: ERJ-3EKF4700V

OMO.#: OMO-ERJ-3EKF4700V

 Thick Film Resistors - SMD 0603 470ohms 1% AEC-Q200
ERJ-2RKF1003X

Mfr.#: ERJ-2RKF1003X

OMO.#: OMO-ERJ-2RKF1003X

 Thick Film Resistors - SMD 0402 100Kohms 1% AEC-Q200
ERJ-3GEY0R00V

Mfr.#: ERJ-3GEY0R00V

OMO.#: OMO-ERJ-3GEY0R00V

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TPS54335ADDAR

Mfr.#: TPS54335ADDAR

OMO.#: OMO-TPS54335ADDAR-TEXAS-INSTRUMENTS

 IC REG BCK ADJ 3A SYNC 8SOPWRPAD
可用性
庫存:
564
訂購:
2547
輸入數量:
CSD18504KCS的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.45
US$1.45
10
US$1.23
US$12.30
100
US$0.95
US$94.80
500
US$0.84
US$418.50
1000
US$0.66
US$661.00
2500
US$0.59
US$1 465.00
10000
US$0.56
US$5 640.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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