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IGD06N60TATMA1

IGD06N60TATMA1
Mfr. #:
IGD06N60TATMA1
製造商:
Infineon Technologies
描述:
IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop
生命週期:
製造商新產品
數據表:
IGD06N60TATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
IGD06N60TATMA1 DatasheetIGD06N60TATMA1 Datasheet (P4-P6)IGD06N60TATMA1 Datasheet (P7-P9)IGD06N60TATMA1 Datasheet (P10-P12)
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-252-3
安裝方式：
貼片/貼片
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
1.5 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
12 A
Pd - 功耗：
88 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 175 C
系列：
止溝IGBT
打包：
捲軸
品牌：
英飛凌科技
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
2500
子類別：
IGBT
商品名：
戰壕
第 # 部分別名：
IGD06N60T IGD6N6TXT SP000960698
單位重量：
0.011175 oz
Tags
IGD06, IGD0, IGD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-252
***nell
TRANSISTOR, IGBT, 600V, 12A, TO-252; DC Collector Current: 12A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 88W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TRENCHSTOP™ Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
The 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO252-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ow.cn
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R
***ark
Igbt, Single, 600V, 12A, To-252; Dc Collector Current:12A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:100W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-252; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Washing machines; General purpose inverters; Aircon compressors; Hard switching topologies up to 1.0kW
***ical
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 27pF 50volts C0G 5%
***or
DISCRETE IGBT WITHOUT ANTI-PARAL
***ical
Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
***ure Electronics
H Series 600 V 10 A SMT Trench Gate Field-Stop IGBT - TO-252
***nell
IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 83W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
Trans IGBT Chip N-CH 600V 14A 38000mW 3-Pin(2+Tab) DPAK T/R
***(Formerly Allied Electronics)
600V DC-1 KHZ (STANDARD) COPACK IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10SDTRPBF
***-Wing Technology
Tube Surface Mount ROHS3Compliant IGBT Transistor 1.8V @ 15V 8A 14A 38W 28ns
***nell
IGBT, COPAK, D-PAK; DC Collector Current: 14A; Collector Emitter Saturation Voltage Vce(on): 1.1V; Power Dissipation Pd: 38W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operati
***ical
Trans IGBT Chip N-CH 600V 15A 55000mW 3-Pin(2+Tab) DPAK T/R
***ure Electronics
STGD7NB60S Series 600 V 7 A SMT N-Channel Power MESHTM IGBT - TO-252-3, DPAK
***r Electronics
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 7 Amp
***icroelectronics SCT
Short-circuit rugged IGBT, DPAK, Tape and Reel
***ernational Rectifier
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:8.5A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:38W; Package/Case:TO-252AA ;RoHS Compliant: Yes
***nell
IGBT, 600V, 8.5A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:8.5A; Voltage, Vce Sat Max:2.6V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:34A; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:180ns; Time, Rise:11ns; Transistors, No. of:1
型號 製造商 描述 庫存 價格
IGD06N60TATMA1
DISTI # V72:2272_06384581		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		1990
  • 75000:$0.4081
  • 30000:$0.4132
  • 15000:$0.4184
  • 6000:$0.4303
  • 3000:$0.4349
  • 1000:$0.4660
  • 500:$0.5955
  • 250:$0.6803
  • 100:$0.6875
  • 50:$0.8299
  • 25:$0.9102
  • 10:$1.0113
  • 1:$1.1855
IGD06N60TATMA1
DISTI # IGD06N60TATMA1CT-ND		Infineon Technologies AGIGBT 600V 12A 88W TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IGD06N60TATMA1
    DISTI # IGD06N60TATMA1DKR-ND    		Infineon Technologies AGIGBT 600V 12A 88W TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IGD06N60TATMA1
      DISTI # IGD06N60TATMA1TR-ND      		Infineon Technologies AGIGBT 600V 12A 88W TO252-3
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.4917
      IGD06N60TATMA1
      DISTI # 29028577      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant      		1990
      • 15:$1.1855
      IGD06N60TATMA1
      DISTI # IGD06N60TATMA1      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: IGD06N60TATMA1)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 25000:$0.4249
      • 15000:$0.4319
      • 10000:$0.4469
      • 5000:$0.4639
      • 2500:$0.4809
      IGD06N60TATMA1
      DISTI # IGD06N60TATMA1      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R - Bulk (Alt: IGD06N60TATMA1)
      RoHS: Compliant
      Min Qty: 863
      Container: Bulk      		Americas - 0
      • 8630:$0.3679
      • 4315:$0.3749
      • 2589:$0.3879
      • 1726:$0.4019
      • 863:$0.4169
      IGD06N60TATMA1
      DISTI # SP000960698      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R (Alt: SP000960698)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 25000:€0.3739
      • 15000:€0.4029
      • 10000:€0.4369
      • 5000:€0.4769
      • 2500:€0.5829
      IGD06N60TATMA1
      DISTI # 13AC8999      		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 12A, TO-252,DC Collector Current:12A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:88W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-252,No. of Pins:3Pins,RoHS Compliant: Yes2490
      • 1000:$0.5070
      • 500:$0.6420
      • 250:$0.6850
      • 100:$0.7270
      • 50:$0.8000
      • 25:$0.8730
      • 10:$0.9460
      • 1:$1.1000
      IGD06N60TATMA1
      DISTI # 726-IGD06N60TATMA1      		Infineon Technologies AGIGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod
      RoHS: Compliant      		1863
      • 1:$1.0900
      • 10:$0.9370
      • 100:$0.7200
      • 500:$0.6360
      • 1000:$0.5020
      • 2500:$0.4450
      • 10000:$0.4290
      IGD06N60TATMA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
      RoHS: Compliant      		394
      • 1000:$0.3800
      • 500:$0.4000
      • 100:$0.4200
      • 25:$0.4400
      • 1:$0.4700
      IGD06N60TATMA1
      DISTI # IGD06N60T      		Infineon Technologies AG600V 12A 88W TO252
      RoHS: Compliant      		0
      • 5:€1.2500
      • 50:€0.6500
      • 200:€0.3500
      • 500:€0.3300
      IGD06N60TATMA1
      DISTI # 2725778      		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 12A, TO-252
      RoHS: Compliant      		2490
      • 10:$1.3900
      • 1:$1.6000
      IGD06N60TATMA1
      DISTI # 2725778      		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 12A, TO-2524990
      • 500:£0.4850
      • 250:£0.5180
      • 100:£0.5500
      • 10:£0.7710
      • 1:£0.9500
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      可用性
      庫存:
      Available
      訂購:
      1984
      輸入數量:
      IGD06N60TATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$1.09
      US$1.09
      10
      US$0.94
      US$9.37
      100
      US$0.72
      US$72.00
      500
      US$0.64
      US$318.00
      1000
      US$0.50
      US$502.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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