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BSC600N25NS3 G

BSC600N25NS3 G
Mfr. #:
BSC600N25NS3 G
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
生命週期:
製造商新產品
數據表:
BSC600N25NS3 G 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
BSC600N25NS3 G 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TDSON-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
250 V
Id - 連續漏極電流：
25 A
Rds On - 漏源電阻：
50 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
29 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
125 W
配置：
單身的
頻道模式：
增強
商品名：
優化MOS
打包：
捲軸
高度：
1.27 mm
長度：
5.9 mm
系列：
OptiMOS 3
晶體管類型：
1 N-Channel
類型：
OptiMOS 3 Power-Transistor
寬度：
5.15 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
25 S
秋季時間：
8 ns
產品類別：
MOSFET
上升時間：
10 ns
出廠包裝數量：
5000
子類別：
MOSFET
典型關斷延遲時間：
22 ns
典型的開啟延遲時間：
10 ns
第 # 部分別名：
BSC600N25NS3GATMA1 BSC6N25NS3GXT SP000676402
單位重量：
0.003527 oz
Tags
BSC600N25NS3G, BSC600N25NS3, BSC600N, BSC60, BSC6, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型號 製造商 描述 庫存 價格
BSC600N25NS3GATMA1
DISTI # BSC600N25NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 250V 25A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.4342
BSC600N25NS3GATMA1
DISTI # BSC600N25NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 250V 25A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.6157
  • 500:$1.9158
  • 100:$2.3659
  • 10:$2.8850
  • 1:$3.2300
BSC600N25NS3GATMA1
DISTI # BSC600N25NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 250V 25A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.6157
  • 500:$1.9158
  • 100:$2.3659
  • 10:$2.8850
  • 1:$3.2300
BSC600N25NS3 G
DISTI # BSC600N25NS3 G		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 8-Pin TDSON T/R (Alt: BSC600N25NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC600N25NS3GATMA1
    DISTI # BSC600N25NS3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 250V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC600N25NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$1.3900
    • 10000:$1.3900
    • 20000:$1.2900
    • 30000:$1.2900
    • 50000:$1.1900
    BSC600N25NS3GATMA1
    DISTI # 79X1338    		Infineon Technologies AGMOSFET, N-CH, 250V, 25A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.05ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1:$2.8300
    • 10:$2.4000
    • 25:$2.2900
    • 50:$2.1900
    • 100:$2.0800
    • 250:$1.9800
    • 500:$1.7800
    • 1000:$1.5000
    BSC600N25NS3 G
    DISTI # 726-BSC600N25NS3GXT    		Infineon Technologies AGMOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
    RoHS: Compliant    		99
    • 1:$2.8300
    • 10:$2.4000
    • 100:$2.0800
    • 250:$1.9800
    • 500:$1.7800
    • 1000:$1.5000
    • 2500:$1.4200
    • 5000:$1.3700
    BSC600N25NS3GATMA1
    DISTI # 726-BSC600N25NS3GATM    		Infineon Technologies AGMOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$2.7000
    • 10:$2.3000
    • 100:$1.9900
    • 250:$1.8900
    • 500:$1.7000
    • 1000:$1.4300
    • 2500:$1.3600
    BSC600N25NS3GATMA1
    DISTI # 9064303P    		Infineon Technologies AGMOSFET N-CH 250V 25A OPTIMOS TDSON8 EP, RL15
    • 25:£1.8320
    • 125:£1.4700
    • 250:£1.3760
    • 625:£1.2840
    BSC600N25NS3GInfineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 25A I(D), 250V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET4
    • 4:$6.6000
    • 2:$7.5000
    • 1:$9.0000
    BSC600N25NS3GATMA1
    DISTI # 2432713RL    		Infineon Technologies AGMOSFET, N CH, 250V, 25A, TDSON-8
    RoHS: Compliant    		0
    • 1:$4.4800
    • 10:$3.8100
    • 100:$3.2900
    BSC600N25NS3GATMA1
    DISTI # 2432713    		Infineon Technologies AGMOSFET, N CH, 250V, 25A, TDSON-8
    RoHS: Compliant    		0
    • 1:$4.4800
    • 10:$3.8100
    • 100:$3.2900
    BSC600N25NS3GATMA1
    DISTI # 2432713    		Infineon Technologies AGMOSFET, N CH, 250V, 25A, TDSON-8
    RoHS: Compliant    		0
    • 1:£2.9600
    • 10:£2.2900
    • 100:£1.8700
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    OMO.#: OMO-F750J687KDC

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    C1005X5R1V105K050BE

    Mfr.#: C1005X5R1V105K050BE

    OMO.#: OMO-C1005X5R1V105K050BE

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 35V 1.00uF X5R 10% Soft Term
    IRLML0100TRPBF

    Mfr.#: IRLML0100TRPBF

    OMO.#: OMO-IRLML0100TRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V 1.6A SOT-23-3
    HZ0603B102R-10

    Mfr.#: HZ0603B102R-10

    OMO.#: OMO-HZ0603B102R-10-LAIRD-TECHNOLOGIES

    		 EMI Filter Beads, Chips & Arrays 1000ohms 100MHz .2A Monolithic 0603 SMD
    XPL2010-222MLC

    Mfr.#: XPL2010-222MLC

    OMO.#: OMO-XPL2010-222MLC-1190

    		 Fixed Inductors 2.2uH 20% 1.3A 173mOhms AEC-Q200
    ESD321DPYR

    Mfr.#: ESD321DPYR

    OMO.#: OMO-ESD321DPYR-TEXAS-INSTRUMENTS

    		 HDMI2.0 ESD PROTECTION
    可用性
    庫存:
    Available
    訂購:
    1989
    輸入數量:
    BSC600N25NS3 G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$2.69
    US$2.69
    10
    US$2.29
    US$22.90
    100
    US$1.98
    US$198.00
    250
    US$1.88
    US$470.00
    500
    US$1.69
    US$845.00
    1000
    US$1.42
    US$1 420.00
    2500
    US$1.35
    US$3 375.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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