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APT80GA60B

APT80GA60B
Mfr. #:
APT80GA60B
製造商:
Microchip / Microsemi
描述:
IGBT Transistors FG, IGBT, 600V, TO-247
生命週期:
製造商新產品
數據表:
APT80GA60B 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
APT80GA60B DatasheetAPT80GA60B Datasheet (P4-P6)
ECAD Model:
產品屬性
屬性值
製造商：
微芯片
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
2 V
最大柵極發射極電壓：
30 V
25 C 時的連續集電極電流：
143 A
Pd - 功耗：
625 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
打包：
管子
連續集電極電流 Ic 最大值：
143 A
高度：
21.46 mm
長度：
16.26 mm
工作溫度範圍：
- 55 C to + 150 C
寬度：
5.31 mm
品牌：
微芯片/Microsemi
連續集電極電流：
143 A
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
1
子類別：
IGBT
商品名：
POWER MOS 8
單位重量：
1.340411 oz
Tags
APT80GA, APT80G, APT80, APT8, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Pt Mos 8 Single 600 V 80 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT80GA60B
***ical
Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 143A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***ical
Trans IGBT Chip N-CH 600V 150A 428000mW 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
IGBT,600V,75A,TO247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:428W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:428W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 110A 446000mW 3-Pin(3+Tab) TO-247 Tube
***i-Key
IGBT 600V 110A 446W TO247
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***hardson RFPD
POWER IGBT TRANSISTOR
***S
new, original packaged
***ource
Thunderbolt IGBT
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UDPBF
***hine Compare
Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC
*** Electronics
IR - IR IRG4PC50UD IGBT DEVICE IGBT W/DIODE 600V 55A TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.65 V Current release time: 74 ns Power dissipation: 200 W
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip Negative Channel 600 Volt 55A 3-Pin(3+Tab) TO-247AC
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UPBF
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2 V Current release time: 120 ns Power dissipation: 200 W
***ment14 APAC
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50U; Fall Time Max:120ns; Fall Time tf:130ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
***ical
Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 600V, 120A, To-247-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
*** Source Electronics
Trans IGBT Chip N-CH 600V 150A 750000mW 3-Pin Power-247 Tube / IGBT 600V 150A 750W POWER-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, FIELD STOP, 600V,75A,POWER-247; Transistor Type:IGBT; DC Collector Current:150A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:750W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:Power 247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
型號 製造商 描述 庫存 價格
APT80GA60B
DISTI # APT80GA60B-ND		Microsemi CorporationIGBT 600V 143A 625W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		11In Stock
  • 510:$7.6528
  • 270:$8.3934
  • 120:$9.1340
  • 30:$10.1213
  • 10:$11.1090
  • 1:$12.3400
APT80GA60B
DISTI # 494-APT80GA60B		Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
RoHS: Compliant		70
  • 1:$11.5200
  • 10:$10.3700
  • 25:$9.4500
  • 50:$8.8000
  • 100:$8.5200
  • 250:$7.7800
  • 500:$7.1000
  • 1000:$6.0100
圖片 型號 描述
TC4432COA

Mfr.#: TC4432COA

OMO.#: OMO-TC4432COA

 Gate Drivers 1.5A Sngl 30V N-Inv
1N4002-E3/73

Mfr.#: 1N4002-E3/73

OMO.#: OMO-1N4002-E3-73

 Rectifiers Vr/100V Io/1A
FTD7904

Mfr.#: FTD7904

OMO.#: OMO-FTD7904-612

 Toggle Switches SPDT ON-ON 6A PNL TOGGLE
TC4432COA

Mfr.#: TC4432COA

OMO.#: OMO-TC4432COA-MICROCHIP-TECHNOLOGY

 Gate Drivers 1.5A Sngl 30V N-Inv
ERJ-3RBD2002V

Mfr.#: ERJ-3RBD2002V

OMO.#: OMO-ERJ-3RBD2002V-1090

 Thick Film Resistors - SMD 0603 20Kohms 0.5%Tol
1N4002-E3/73

Mfr.#: 1N4002-E3/73

OMO.#: OMO-1N4002-E3-73-VISHAY

 Rectifiers Vr/100V Io/1A
可用性
庫存:
69
訂購:
2052
輸入數量:
APT80GA60B的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$11.52
US$11.52
10
US$10.37
US$103.70
25
US$9.45
US$236.25
50
US$8.80
US$440.00
100
US$8.52
US$852.00
250
US$7.78
US$1 945.00
500
US$7.10
US$3 550.00
1000
US$6.01
US$6 010.00
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