OMO ElectronicOMO Electronic
Expand menu
0 購物車

STP10N62K3

STP10N62K3
Mfr. #:
STP10N62K3
製造商:
STMicroelectronics
描述:
MOSFET N-channel 620 V 8.4 A TO-220 TO-22
生命週期:
製造商新產品
數據表:
STP10N62K3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STP10N62K3 更多信息 STP10N62K3 Product Details
產品屬性
屬性值
製造商：
意法半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
650 V
Id - 連續漏極電流：
8.4 A
Rds On - 漏源電阻：
680 mOhms
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
42 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
125 W
配置：
單身的
打包：
管子
系列：
STP10N62K3
晶體管類型：
1 N-Channel
品牌：
意法半導體
正向跨導 - 最小值：
6 S
秋季時間：
31 ns
產品類別：
MOSFET
上升時間：
15 ns
出廠包裝數量：
50
子類別：
MOSFET
典型關斷延遲時間：
41 ns
典型的開啟延遲時間：
14.5 ns
單位重量：
0.011640 oz
Tags
STP10N6, STP10N, STP10, STP1, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220 package
***et
Trans MOSFET N-CH 620V 8.4A 3-Pin(3+Tab) TO-220 Tube
***ponent Stockers USA
8.4 A 620 V 0.75 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 620V, 8.4A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
***icroelectronics
N-channel 600 V, 0.65 Ohm typ., 10 A, Zener-protected SuperMESH Power MOSFET in TO-220 package
***ure Electronics
N-Channel 600 V 0.75 Ohm Flange Mount SuperMESH™ Power MosFet - TO-220
***ical
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:115W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
*** Source Electronics
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 500V 10A TO-220FP
***icroelectronics
N-channel 500 V, 0.48 Ohm typ., 10 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220 package
***ure Electronics
Single N-Channel 500 V 125 W 68 nC Silicon Through Hole Mosfet - TO-220-3
*** Electronics
STP11NK50Z STMicroelectronics MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH N-Channel Mosfet STP11NK50Z TO-220(ST)
***ark
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:125W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-channel 600 V 0.95 Ohm 125 W Through Hole SuperMESH™ Power Mosfet - TO-220
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 7A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 7A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po
***emi
N-Channel Power MOSFET, UniFETTM II, 600V, 10A, 750mΩ, TO-220
***Yang
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,10A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.64ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:185W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220
***ark
MOSFET, N-CH, 800V, 10A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 10A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications.
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 6.5 A, 1.25 Ω, TO-220
***et
Trans MOSFET N-CH 600V 6.5A 3-Pin(3+Tab) TO-220 Rail
*** Stop Electro
Power Field-Effect Transistor, 6.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,6.5A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.05ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:147W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
型號 製造商 描述 庫存 價格
STP10N62K3
DISTI # 497-9099-5-ND		STMicroelectronicsMOSFET N-CH 620V 8.4A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		813In Stock
  • 500:$1.3138
  • 100:$1.5991
  • 50:$1.8768
  • 10:$1.9890
  • 1:$2.2100
STP10N62K3
DISTI # 511-STP10N62K3		STMicroelectronicsMOSFET N-channel 620 V 8.4 A TO-220 TO-22
RoHS: Compliant		0
    STP10N62K3STMicroelectronics 80
      STP10N62K3STMicroelectronicsN-channel 620V,0.68, 8.4A Power MOSFET700
      • 1:$0.6100
      • 100:$0.6100
      • 500:$0.6100
      • 1000:$0.6100
      STP10N62K3
      DISTI # 2098285      		STMicroelectronicsMOSFET, N CH, 620V, 8.4A, TO220
      RoHS: Compliant      		0
      • 500:$1.9800
      • 100:$2.4100
      • 50:$2.8300
      • 10:$3.0000
      • 1:$3.3300
      圖片 型號 描述
      STP10NK80Z

      Mfr.#: STP10NK80Z

      OMO.#: OMO-STP10NK80Z

      		 MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH
      STP10N105K5

      Mfr.#: STP10N105K5

      OMO.#: OMO-STP10N105K5-STMICROELECTRONICS

      		 IGBT Transistors MOSFET POWER MOSFET
      STP10NK70ZFP P10NK70ZFP

      Mfr.#: STP10NK70ZFP P10NK70ZFP

      OMO.#: OMO-STP10NK70ZFP-P10NK70ZFP-1190

      		 全新原裝
      STP10

      Mfr.#: STP10

      OMO.#: OMO-STP10-1190

      		 全新原裝
      STP100N10F7

      Mfr.#: STP100N10F7

      OMO.#: OMO-STP100N10F7-STMICROELECTRONICS

      		 MOSFET N CH 100V 80A TO-220
      STP1020

      Mfr.#: STP1020

      OMO.#: OMO-STP1020-1190

      		 全新原裝
      STP1031LGA-300

      Mfr.#: STP1031LGA-300

      OMO.#: OMO-STP1031LGA-300-1190

      		 全新原裝
      STP1032ALGA-450

      Mfr.#: STP1032ALGA-450

      OMO.#: OMO-STP1032ALGA-450-1190

      		 全新原裝
      STP10LCD150CFP

      Mfr.#: STP10LCD150CFP

      OMO.#: OMO-STP10LCD150CFP-1190

      		 全新原裝
      STP10NK60Z,P10NK60Z,10NK

      Mfr.#: STP10NK60Z,P10NK60Z,10NK

      OMO.#: OMO-STP10NK60Z-P10NK60Z-10NK-1190

      		 全新原裝
      可用性
      庫存:
      Available
      訂購:
      3000
      輸入數量:
      STP10N62K3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      從...開始
      最新產品
      More Newest Products
      Top