CGHV60040D

Mfr. #:: CGHV60040D
製造商:: N/A
描述:: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
生命週期:: 製造商新產品
數據表:: CGHV60040D 數據表
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ECAD Model:
更多信息:: CGHV60040D 更多信息

產品屬性
屬性值

製造商：: 克里公司

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

晶體管類型：: HEMT

技術：: 氮化鎵

獲得：: 18 dB

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 50 V

Vgs - 柵源擊穿電壓：: -

Id - 連續漏極電流：: 3.2 A

輸出功率：: 40 W

最大漏柵電壓：: -

最低工作溫度：: -

最高工作溫度：: -

Pd - 功耗：: -

安裝方式：: 貼片/貼片

包裝/案例：: 死

打包：: 凝膠包

應用：: -

配置：: 雙重的

高度：: 100 um

長度：: 1800 um

工作頻率：: 6 GHz

工作溫度範圍：: -

產品：: 氮化鎵 HEMT

寬度：: 820 um

品牌：: Wolfspeed / 克里

正向跨導 - 最小值：: -

柵源截止電壓：: -

通道數：: 2 Channel

班級：: -

開發套件：: -

秋季時間：: -

NF - 噪聲係數：: -

P1dB - 壓縮點：: -

產品類別：: 射頻 JFET 晶體管

Rds On - 漏源電阻：: -

上升時間：: -

出廠包裝數量：: 10

子類別：: 晶體管

典型關斷延遲時間：: -

Vgs th - 柵源閾值電壓：: -

第 # 部分別名：: CGHV60040D-GP4

Tags: CGHV600, CGHV6, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV60040D 描述

***i-Key: RF MOSFET HEMT 50V DIE

CGHV60040D 更多信息

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

CGHV600 6GHz GaN HEMTs: Wolfspeed CGHV600 6GHz gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. CGHV600 GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. These transistors also offer greater power density and wider bandwidths. CGHV600 series devices are ideal for use in a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers.Learn More

Market price

型號	製造商	描述	庫存	價格
CGHV60040D-GP4 DISTI # CGHV60040D-GP4-ND	Wolfspeed	RF MOSFET HEMT 50V DIE RoHS: Compliant Min Qty: 10 Container: Tray	550In Stock	10:$42.3360
CGHV60040D DISTI # 941-CGHV60040D	Cree, Inc.	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt RoHS: Compliant	200	10:$42.3400

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