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FDG6335N

FDG6335N
Mfr. #:
FDG6335N
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET FDG6335N
生命週期:
製造商新產品
數據表:
FDG6335N 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SOT-323-6
通道數：
2 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
20 V
Id - 連續漏極電流：
700 mA
Rds On - 漏源電阻：
300 mOhms
Vgs - 柵源電壓：
12 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
300 mW
配置：
雙重的
頻道模式：
增強
商品名：
動力戰壕
打包：
捲軸
高度：
1.1 mm
長度：
2 mm
產品：
MOSFET 小信號
系列：
FDG6335N
晶體管類型：
2 N-Channel
類型：
MOSFET
寬度：
1.25 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
2.8 S
秋季時間：
7 ns
產品類別：
MOSFET
上升時間：
7 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
9 ns
典型的開啟延遲時間：
5 ns
第 # 部分別名：
FDG6335N_NL
單位重量：
0.000988 oz
Tags
FDG6335, FDG633, FDG63, FDG6, FDG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET Array Dual N-CH 20V 0.7A 6-Pin SC-70 T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET, 20V, 0.7A, 300mΩ
***ment14 APAC
MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:700mA; Source Voltage Vds:20V; On
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
***nell
MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.1V; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***eco
Transistor MOSFET N/P-Channel 20 Volt 0.7A/0.6A 6-Pin SC-70
***ure Electronics
Dual N & P-Channel 20 V 300 mOhm PowerTrench Mosfet SC70-6
***roFlash
Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, DUAL, NP, SMD, SC70-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:300mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:700mA; Package / Case:SC-70; Power Dissipation Pd:300mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
***emi
PowerTrench® MOSFET, P-Channel 2.5V Specified, -20 V, -0.6 A, 420 mΩ
***Yang
Transistor MOSFET Array Dual P-CH 20V 0.6A 6-Pin SC-70 T/R - Tape and Reel
***el Electronic
PMIC - Power Management - Specialized Tape & Reel (TR) 3 (168 Hours) 32-WFQFN Exposed Pad Surface Mount Processor -40°C~85°C 2.7V~5.5V QUAD IC REG BUCK LDO 32TQFN
***rchild Semiconductor
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
***et Japan
Transistor MOSFET Array Dual P-CH 20V 0.5A 6-Pin SC-70 T/R
***rchild Semiconductor
These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital transistors and small signal MOSFETS
***nell
MOSFET, DUAL P-CH, -20V, -0.5A, SC-70-6; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -500mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.58ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Electronics
SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6-Pin SOT-363
***ure Electronics
N / P-Channel 20 V 0.39/0.85 O Power Mosfet - SOT-363 (SC-70-6)
***nell
MOSFET, N/P-CH, 20V, 0.7A, SOT-363-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.325ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 340mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015)
***ure Electronics
Dual N-Channel 20 V 0.385 Ohms Surface Mount Power Mosfet - SOT-363
***et Europe
Transistor MOSFET Array Dual N-CH 20V 0.66A 6-Pin SC-70 T/R
***ment14 APAC
MOSFET, DUAL, N, 6-SC-70; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:200mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (15-Dec-2010); Continuous Drain Current Id:700mA; Current Id Max:660mA; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):385mohm; Package / Case:SC-70; Power Dissipation Pd:200mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V
***(Formerly Allied Electronics)
SI1062X-T1-GE3 N-channel MOSFET Transistor; 0.53 A; 20 V; 3-Pin SC-89
***ment14 APAC
MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:530mA; Source Voltage Vds:20V; On Resistance
***nell
MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 530mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 220mW; Transistor Case Style: SC-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
型號 製造商 描述 庫存 價格
FDG6335N
DISTI # FDG6335NTR-ND		ON SemiconductorMOSFET 2N-CH 20V 0.7A SOT-363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.2431
FDG6335N
DISTI # FDG6335NCT-ND		ON SemiconductorMOSFET 2N-CH 20V 0.7A SOT-363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2763
  • 500:$0.3453
  • 100:$0.4662
  • 10:$0.6040
  • 1:$0.6900
FDG6335N
DISTI # FDG6335NDKR-ND		ON SemiconductorMOSFET 2N-CH 20V 0.7A SOT-363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2763
  • 500:$0.3453
  • 100:$0.4662
  • 10:$0.6040
  • 1:$0.6900
FDG6335N
DISTI # FDG6335N		ON SemiconductorTrans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R (Alt: FDG6335N)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    FDG6335N
    DISTI # FDG6335N    		ON SemiconductorTrans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R (Alt: FDG6335N)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.2559
    • 6000:€0.2089
    • 12000:€0.1919
    • 18000:€0.1769
    • 30000:€0.1639
    FDG6335N
    DISTI # FDG6335N    		ON SemiconductorTrans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R - Tape and Reel (Alt: FDG6335N)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.1809
    • 6000:$0.1799
    • 12000:$0.1779
    • 18000:$0.1759
    • 30000:$0.1709
    FDG6335N
    DISTI # FDG6335N    		ON SemiconductorTrans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R - Cut TR (SOS) (Alt: FDG6335N)
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape    		Americas - 0
    • 1:$0.2099
    • 30:$0.2069
    • 75:$0.2049
    • 150:$0.2019
    • 375:$0.1959
    • 750:$0.1889
    • 1500:$0.1889
    FDG6335N
    DISTI # 58K1457    		ON SemiconductorDUAL N CHANNEL MOSFET, 20V, 700mA, SC-70,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:700mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.1V RoHS Compliant: Yes0
    • 1:$0.5760
    • 25:$0.4790
    • 50:$0.3950
    • 100:$0.3110
    • 250:$0.2910
    • 500:$0.2700
    • 1000:$0.2500
    FDG6335N
    DISTI # 29X6689    		ON SemiconductorMOSFET, N CHANNEL, 20V, 0.7A, SC-70-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:700mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.1V RoHS Compliant: Yes0
    • 1:$0.2120
    • 3000:$0.2100
    • 6000:$0.2070
    • 12000:$0.2050
    FDG6335N
    DISTI # 512-FDG6335N    		ON SemiconductorMOSFET FDG6335N
    RoHS: Compliant    		0
    • 1:$0.5700
    • 10:$0.4730
    • 100:$0.3050
    • 1000:$0.2440
    • 3000:$0.2060
    • 9000:$0.1990
    FDG6335NFairchild Semiconductor Corporation 1836
      FDG6335N
      DISTI # 2453408      		ON SemiconductorMOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6
      RoHS: Compliant      		0
      • 5:£0.4130
      • 25:£0.3880
      • 100:£0.2360
      • 250:£0.2100
      • 500:£0.1850
      FDG6335N
      DISTI # 2453408RL      		ON SemiconductorMOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6
      RoHS: Compliant      		0
      • 1:$0.9020
      • 10:$0.7490
      • 100:$0.4830
      FDG6335N
      DISTI # 2453408      		ON SemiconductorMOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6
      RoHS: Compliant      		0
      • 1:$0.9020
      • 10:$0.7490
      • 100:$0.4830
      圖片 型號 描述
      FDG6301N

      Mfr.#: FDG6301N

      OMO.#: OMO-FDG6301N

      		 MOSFET SC70-6 N-CH 25V
      FDG6322C_D87Z

      Mfr.#: FDG6322C_D87Z

      OMO.#: OMO-FDG6322C-D87Z-ON-SEMICONDUCTOR

      		 MOSFET N/P-CH 25V SC70-6
      FDG6323

      Mfr.#: FDG6323

      OMO.#: OMO-FDG6323-1190

      		 全新原裝
      FDG6323L-NL

      Mfr.#: FDG6323L-NL

      OMO.#: OMO-FDG6323L-NL-1190

      		 全新原裝
      FDG6324L , 1N5232BRL

      Mfr.#: FDG6324L , 1N5232BRL

      OMO.#: OMO-FDG6324L-1N5232BRL-1190

      		 全新原裝
      FDG6331L(OS 30)

      Mfr.#: FDG6331L(OS 30)

      OMO.#: OMO-FDG6331L-OS-30--1190

      		 全新原裝
      FDG6335N

      Mfr.#: FDG6335N

      OMO.#: OMO-FDG6335N-ON-SEMICONDUCTOR

      		 MOSFET 2N-CH 20V 0.7A SOT-363
      FDG6335N-NL

      Mfr.#: FDG6335N-NL

      OMO.#: OMO-FDG6335N-NL-1190

      		 全新原裝
      FDG6306P-CUT TAPE

      Mfr.#: FDG6306P-CUT TAPE

      OMO.#: OMO-FDG6306P-CUT-TAPE-1190

      		 全新原裝
      FDG6332C--

      Mfr.#: FDG6332C--

      OMO.#: OMO-FDG6332C---1190

      		 全新原裝
      可用性
      庫存:
      Available
      訂購:
      2000
      輸入數量:
      FDG6335N的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$0.29
      US$0.29
      10
      US$0.24
      US$2.43
      100
      US$0.16
      US$15.70
      1000
      US$0.13
      US$126.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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