FP35R12W2T4B11BOMA1

Mfr. #:: FP35R12W2T4B11BOMA1
製造商:: Infineon Technologies
描述:: IGBT MODULE 1200V 35A
生命週期:: 製造商新產品
數據表:: FP35R12W2T4B11BOMA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

Tags: FP35R12W2, FP35R12W, FP35R, FP35, FP3

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FP35R12W2T4B11BOMA1 描述

***ical: Trans IGBT Module N-CH 1200V 54A 215000mW 23-Pin EASY2B-2 Tray

***et Europe: Trans IGBT Module N-CH 1.2KV 54A 23-Pin EASY2B-2

***Components: In a Box of 15, Infineon FP35R12W2T4B11BOMA1, EASY2B , N-Channel 3 Phase Bridge IGBT Module, 54 A max, 1200 V, PCB Mount

***i-Key: IGBT MODULE 1200V 35A

***ronik: 3PH-PIM 1200V 35A EasyPIM2BFit

***et: LOW POWER EASY

***ark: Igbt, Module, N-Ch, 1.2Kv, 54A; Transistor Polarity:n Channel; Dc Collector Current:54A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:215W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, MODULE, N-CH, 1.2KV, 54A; Transistor Polarity:N Channel; DC Collector Current:54A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:EconoPIM 2B Series; SVHC:No SVHC (27-Jun-2018)

***nell: IGBT, MODULO, CA-N, 1.2KV, 54A; Polarità Transistor:Canale N; Corrente di Collettore CC:54A; Tensione Saturaz Collettore-Emettitore Vce(on):1.85V; Dissipazione di Potenza Pd:215W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EconoPIM 2B Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: EasyPIM 2B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology. | Summary of Features: High power density; Established Easy module concept; Integrated temperature sensor available; Low stray inductance module design; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; ups; aircon; medical; batterycharger; solar

Market price

型號	製造商	描述	庫存	價格
FP35R12W2T4B11BOMA1 DISTI # V99:2348_18206007	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 54A 215000mW 23-Pin Tray RoHS: Compliant	8	100:$37.4200 25:$39.0300 10:$39.9200 1:$42.3200
FP35R12W2T4B11BOMA1 DISTI # FP35R12W2T4B11BOMA1-ND	Infineon Technologies AG	IGBT MODULE 1200V 35A RoHS: Compliant Min Qty: 1 Container: Bulk	On Order	10:$49.8800 1:$53.1000
FP35R12W2T4B11BOMA1 DISTI # 30345440	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 54A 215000mW 23-Pin Tray RoHS: Compliant	8	1:$42.3200
FP35R12W2T4B11BOMA1 DISTI # FP35R12W2T4B11BOMA1	Infineon Technologies AG	LOW POWER EASY - Trays (Alt: FP35R12W2T4B11BOMA1) RoHS: Compliant Min Qty: 15 Container: Tray	Americas - 0	15:$44.0900 30:$42.4900 60:$40.9900 90:$39.5900 150:$38.8900
FP35R12W2T4B11BOMA1 DISTI # 34AC1528	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 54A,Transistor Polarity:N Channel,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:215W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes	1	1:$43.6800 5:$42.5100 10:$41.2900 25:$40.6800 50:$40.0800 100:$37.6800
FP35R12W2T4_B11 DISTI # 641-FP35R12W2T4_B11	Infineon Technologies AG	IGBT Modules IGBT 1200V 35A	0	1:$50.5700 5:$49.4400 10:$47.5100 25:$45.9700 100:$42.6100
FP35R12W2T4B11BOMA1 DISTI # 2781245	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 54A RoHS: Compliant	3	1:£42.2200 5:£40.3400 10:£38.5700
FP35R12W2T4B11BOMA1 DISTI # 2781245	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 54A RoHS: Compliant	0	1:$78.2400 5:$76.7600 10:$72.6500 50:$70.1400
FP35R12W2T4B11BOMA1 DISTI # C1S322000680948	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 54A 215000mW 23-Pin EASY2B-2 Tray RoHS: Compliant	8	1:$40.2000

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