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FDT461N

FDT461N
Mfr. #:
FDT461N
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN
生命週期:
製造商新產品
數據表:
FDT461N 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDT461N DatasheetFDT461N Datasheet (P4-P6)FDT461N Datasheet (P7-P9)FDT461N Datasheet (P10)
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
E
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SOT-223-4
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
400 mA
Rds On - 漏源電阻：
1.4 Ohms
Vgs - 柵源電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
1.13 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
高度：
1.8 mm
長度：
6.5 mm
產品：
MOSFET 小信號
晶體管類型：
1 N-Channel
類型：
MOSFET
寬度：
3.5 mm
品牌：
安森美半導體/飛兆半導體
秋季時間：
1.3 ns
產品類別：
MOSFET
上升時間：
1.3 ns
出廠包裝數量：
2500
子類別：
MOSFET
典型關斷延遲時間：
63 ns
典型的開啟延遲時間：
3 ns
第 # 部分別名：
FDT461N_NL
單位重量：
0.003951 oz
Tags
FDT4, FDT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
N-Channel 100V 540mA (Ta) 1.13W (Ta) Surface Mount SOT-223-4 - Bulk
***i-Key
MOSFET N-CH 100V 0.54A SOT-223
***inecomponents.com
100V N-Channel Logic Level PowerTrench MOSFET
***ser
MOSFETs NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN
***or
MOSFET N-CH 100V 540MA SOT223-4
***ure Electronics
Single N-Channel 100 V 2 W Silicon Surface Mount Mosfet - SOT-223
***ical
Trans MOSFET N-CH 100V 0.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ark
MOSFET, N CHANNEL, 100V, 0.8A, SOT223; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:800mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes
***nell
MOSFET, N CH, 100V, 0.8A, SOT223; Transistor Polarity: N Channel; Continuous Drain Current Id: 800mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R
***nell
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 1.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
*** Stop Electro
Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***(Formerly Allied Electronics)
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.2Ohm; ID 1.6A; SOT-223; PD 1W; VGS +/-20V; -55
***ure Electronics
Single N-Channel 100 V 0.2 Ohm 17 nC HEXFET® Power Mosfet - SOT-223
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
***ical
Trans MOSFET N-CH Si 100V 2.2A 4-Pin(3+Tab) SOT-223 Tube
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1W; No. of Pins:4Pins RoHS Compliant: Yes
***nell
MOSFET, N, 100V, 1.6A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 60°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 13A; SMD Marking: FL4310; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
***klin Elektronik
INFINEON SMD Autom. MOSFET NFET 100V 1,8A 230mΩ 150°C SOT-223 BSP372
***p One Stop
Trans MOSFET N-CH 100V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
Single N-Channel 100 V 270 mOhm 14.3 nC OptiMOS™ Power Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt:
***ment14 APAC
MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Source Voltage Vds:100V; On Resistance
***ark
MOSFET, N-CH, 100V, 1.8A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***nell
MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.153ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.8 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 230 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 6.7 / Turn-OFF Delay Time ns = 47.3 / Turn-ON Delay Time ns = 5.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223
***eco
Transistor MOSFET N-Channel 100 Volt 1.7A 4-Pin(3+Tab) SOT-223
*** Source Electronics
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.7A SOT-223
***ure Electronics
N-Channel 100 V 0.35 Ohm Surface Mount Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled
***nell
N CH MOSFET, 100V, 1.7A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.275ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 380 / Gate-Source Voltage V = 20 / Fall Time ns = 110 / Rise Time ns = 210 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2
***(Formerly Allied Electronics)
IRFL9110TRPBF P-channel MOSFET Transistor; 0.69 A; 100 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single P-Channel 100 V 1.2 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Stop Electro
Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
型號 製造商 描述 庫存 價格
FDT461N
DISTI # FDT461N-ND		ON SemiconductorMOSFET N-CH 100V 0.54A SOT-223
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDT461NFairchild Semiconductor CorporationPower Field-Effect Transistor, 0.54A I(D), 100V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		47000
    • 1000:$0.4500
    • 500:$0.4700
    • 100:$0.4900
    • 25:$0.5100
    • 1:$0.5500
    FDT461N
    DISTI # 512-FDT461N    		ON SemiconductorMOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN
    RoHS: Compliant    		0
      圖片 型號 描述
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      可用性
      庫存:
      Available
      訂購:
      2000
      輸入數量:
      FDT461N的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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