BSM75GAR120DN2

Mfr. #:: BSM75GAR120DN2
製造商:: Infineon Technologies
描述:: IGBT Transistors 1200V 100A GAR CH
生命週期:: 製造商新產品
數據表:: BSM75GAR120DN2 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商: 英飛凌

產品分類: 集成電路芯片

安裝方式: 擰緊

包裝盒: IS4 (34 mm )-5

配置: 單身的

鈀功耗: 625 W

最高工作溫度: + 150 C

最低工作溫度: - 40 C

集電極-發射極-電壓-VCEO-Max: 1200 V

集電極-發射極-飽和-電壓: 2.5 V

25-C 時的連續集電極電流: 100 A

柵極-發射極-漏電流: 400 nA

最大柵極發射極電壓: +/- 20 V

Tags: BSM75GAR12, BSM75GAR, BSM75GA, BSM75G, BSM75, BSM7, BSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSM75GAR120DN2 描述

***ser: IGBT - Standard Modules 1200V, 100A, GAR CH

***omponent: Eupec Infineon power module

***nell: IGBT MODULE, CHOPPER, 1200V; Transistor type:Half-Bridge; Voltage, Vces:1200V; Current, Ic continuous a max:75A; Case style:M34a; Power, Pd:625W; Transistor polarity:NPN; Voltage, Vceo:1200V

Market price

型號	製造商	描述	庫存	價格
BSM75GAR120DN2HOSA1 DISTI # BSM75GAR120DN2HOSA1-ND	Infineon Technologies AG	IGBT 2 MED POWER 34MM-1 RoHS: Compliant Min Qty: 10 Container: Tray	Limited Supply - Call	10:$78.5330
BSM75GAR120DN2 DISTI # 61M5057	Infineon Technologies AG	IGBT MODULE, CHOPPER, 1200V,Transistor Polarity:N Channel,DC Collector Current:105A,Collector Emitter Saturation Voltage Vce(on):3V,Power Dissipation Pd:625W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:7Pins , RoHS Compliant: Yes	0
BSM75GAR120DN2	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	2	1000:$68.6500 500:$72.2600 100:$75.2300 25:$78.4500 1:$84.4900
BSM75GAR120DN2 DISTI # 641-BSM75GAR120DN2	Infineon Technologies AG	IGBT Transistors 1200V 100A GAR CH RoHS: Compliant	0
BSM75GAR120DN2 DISTI # 1496960	Infineon Technologies AG	IGBT MODULE, CHOPPER, 1200V RoHS: Compliant	0	1:£55.8100 5:£54.5300 10:£53.2600 50:£51.9800
BSM75GAR120DN2 DISTI # 1496960	Infineon Technologies AG	IGBT MODULE, CHOPPER, 1200V RoHS: Compliant	0	1:$125.0700 5:$120.6100 12:$116.4500

相關產品

圖片	型號	描述
	Mfr.#: BSM75GAL120DN2 OMO.#: OMO-BSM75GAL120DN2	IGBT Modules 1200V 75A CHOPPER
	Mfr.#: BSM75GAR120DN2 OMO.#: OMO-BSM75GAR120DN2	IGBT Transistors 1200V 100A GAR CH
	Mfr.#: BSM75GAL100D OMO.#: OMO-BSM75GAL100D-1190	全新原裝
	Mfr.#: BSM75GAL120D OMO.#: OMO-BSM75GAL120D-1190	全新原裝
	Mfr.#: BSM75GAR120D OMO.#: OMO-BSM75GAR120D-1190	全新原裝
	Mfr.#: BSM75GAR170DN2 OMO.#: OMO-BSM75GAR170DN2-1190	全新原裝
	Mfr.#: BSM75GAL120DN2HOSA1 OMO.#: OMO-BSM75GAL120DN2HOSA1-INFINEON-TECHNOLOGIES	MEDIUM POWER 34MM
	Mfr.#: BSM75GAR120DN2HOSA1 OMO.#: OMO-BSM75GAR120DN2HOSA1-INFINEON-TECHNOLOGIES	IGBT 2 MED POWER 34MM-1
	Mfr.#: BSM75GAL120DN2 OMO.#: OMO-BSM75GAL120DN2-125	IGBT Modules 1200V 75A CHOPPER
	Mfr.#: BSM75GAR120DN2 OMO.#: OMO-BSM75GAR120DN2-126	IGBT Transistors 1200V 100A GAR CH