APT13005T-G1

APT13005T-G1
Mfr. #:
APT13005T-G1
製造商:
Diodes Incorporated
描述:
Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A
生命週期:
製造商新產品
數據表:
APT13005T-G1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT13005T-G1 DatasheetAPT13005T-G1 Datasheet (P4-P6)
ECAD Model:
產品屬性
屬性值
製造商:
二極管公司
產品分類:
雙極晶體管 - BJT
RoHS:
Y
安裝方式:
通孔
包裝/案例:
TO-220AB-3
晶體管極性:
NPN
配置:
單身的
集電極-發射極電壓 VCEO 最大值:
450 V
發射極基極電壓 VEBO:
9 V
集電極-發射極飽和電壓:
300 mV
最大直流集電極電流:
8 A
增益帶寬積 fT:
4 MHz
最低工作溫度:
- 65 C
最高工作溫度:
+ 150 C
系列:
APT1300
直流電流增益 hFE 最大值:
35 at 1 A, 5 V
打包:
管子
品牌:
二極管公司
連續集電極電流:
4 A
DC 集電極/基極增益 hfe 最小值:
15
Pd - 功耗:
75 W
產品類別:
BJT - 雙極晶體管
出廠包裝數量:
1000
子類別:
晶體管
單位重量:
0.063493 oz
Tags
APT13005, APT130, APT13, APT1, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
450V 4A NPN Power Transistor TO220AB | Diodes Inc APT13005T-G1
***et
Trans GP BJT NPN 700V 4A 3-Pin TO-220AB Tube
***i-Key
TRANS NPN 450V 4A TO220AB
***des Inc SCT
NPN, 700V, 4A, TO220AB, 75W
***emi
4.0 A, 400 V NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***(Formerly Allied Electronics)
Transistor, Bipolar,Si,NPN,Power,VCEO 700VDC,IC 4A,PD 2W,TO-220AB,hFE 40,fT 4MHz | ON Semiconductor MJE13005G
***ical
Trans GP BJT NPN 400V 4A 3-Pin(3+Tab) TO-220AB Rail
***ark
RF Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Package/Case:3-TO-220; Power Dissipation, Pd:2W; DC Current Gain Min (hfe):8; Frequency Min:75MHz; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***th Star Micro
These devices are designed for high-voltage high-speed power switc inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators Inverters Motor Controls Solenoid/Relay drivers and Deflection circuits.
***nell
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 2W; DC Collector Current: 4A; DC Current Gain hFE: 4hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Application Code: PHVS; Av Current Ic: 4A; Collector Emitter Saturation Voltage Vce(on): 6V; Continuous Collector Current Ic Max: 4A; Current Ic @ Vce Sat: 3A; Current Ic Continuous a Max: 4A; Current Ic hFE: 2mA; Fall Time @ Ic: 0.9µs; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 4MHz; Gain Bandwidth ft Typ: 4MHz; Hfe Min: 8; No. of Transistors: 1; Operating Temperature Min: -65°C; Power Dissipation Ptot Max: 60W; Voltage Vcbo: 700V
***-Wing Technology
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 30 @ 300mA 10V 1A 2W 10MHz
***hine Compare
Bipolar Junction Transistor (BJT) NPN 400V 1A 10MHz 2W TO-220AB
***emi
1.0 A, 400 V NPN Bipolar Power Transistor
***ment14 APAC
Transistor, NPN, 400V, TO-220; Transisto; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition
***ark
Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Transition Frequency Typ, ft:10MHz; Power Dissipation, Pd:2000mW; DC Collector Current:1A; DC Current Gain Max (hfe):30; No. of Pins:3 ;RoHS Compliant: Yes
***ical
Trans GP BJT PNP 80V 4A 30000mW 3-Pin(3+Tab) TO-220AB Tube
***emi
Power Bipolar Transistor, PNP, 4.0 A, 80 V
***r Electronics
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ment14 APAC
TRANSISTOR, RF; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:30W; DC Collector Current:4A; DC Current Gain hFE:120; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Current Ic Continuous a Max:4A; Gain Bandwidth ft Typ:40MHz; Hfe Min:20; Package / Case:TO-220AB; Power Dissipation Pd:30W; Termination Type:Through Hole
型號 製造商 描述 庫存 價格
APT13005T-G1
DISTI # V36:1790_06690845
Zetex / Diodes Inc450V NPN High Voltage Power Transistor
RoHS: Compliant
0
  • 1000000:$0.2303
  • 500000:$0.2306
  • 100000:$0.2546
  • 10000:$0.2969
  • 1000:$0.3040
APT13005T-G1
DISTI # APT13005T-G1DI-ND
Diodes IncorporatedTRANS NPN 450V 4A TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$0.3040
APT13005T-G1
DISTI # APT13005T-G1
Diodes IncorporatedTrans GP BJT NPN 700V 4A 3-Pin TO-220AB Tube (Alt: APT13005T-G1)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€0.2039
  • 500:€0.2069
  • 100:€0.2099
  • 50:€0.2129
  • 25:€0.2159
  • 10:€0.2199
  • 1:€0.2309
APT13005T-G1
DISTI # APT13005T-G1
Diodes IncorporatedTrans GP BJT NPN 700V 4A 3-Pin TO-220AB Tube - Rail/Tube (Alt: APT13005T-G1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$0.1939
  • 6000:$0.1979
  • 4000:$0.2079
  • 2000:$0.2179
  • 1000:$0.2289
APT13005T-G1
DISTI # 70550933
Diodes Incorporated450V 4A NPN Power Transistor TO220AB
RoHS: Compliant
0
  • 125:$0.4070
  • 250:$0.3630
  • 625:$0.3010
  • 1250:$0.2920
APT13005T-G1
DISTI # 621-APT13005T-G1
Diodes IncorporatedBipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A
RoHS: Compliant
920
  • 1:$0.7100
  • 10:$0.5890
  • 100:$0.3800
  • 1000:$0.3040
APT13005T-G1
DISTI # 8283335P
Zetex / Diodes Inc450V 4A NPN POWER TRANSISTOR TO220AB, TU350
  • 1250:£0.2700
  • 625:£0.2950
  • 250:£0.3060
  • 125:£0.3190
圖片 型號 描述
MC34152DG

Mfr.#: MC34152DG

OMO.#: OMO-MC34152DG

Gate Drivers 1.5A High Speed Dual Non-Inverting MOSFET
SN65176BD

Mfr.#: SN65176BD

OMO.#: OMO-SN65176BD

RS-485 Interface IC Differential Bus
NTCALUG02A103F

Mfr.#: NTCALUG02A103F

OMO.#: OMO-NTCALUG02A103F-VISHAY

Thermistors - NTC 10K 1% Low Therm Gradient
MC34152DG

Mfr.#: MC34152DG

OMO.#: OMO-MC34152DG-ON-SEMICONDUCTOR

Gate Drivers 1.5A High Speed Dual Non-Inverting MOSFET
SN65176BD

Mfr.#: SN65176BD

OMO.#: OMO-SN65176BD-TEXAS-INSTRUMENTS

RS-485 Interface IC Differential Bus
可用性
庫存:
920
訂購:
2903
輸入數量:
APT13005T-G1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.71
US$0.71
10
US$0.59
US$5.89
100
US$0.38
US$38.00
1000
US$0.30
US$304.00
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