FGH75T65UPD

Mfr. #:: FGH75T65UPD
製造商:: ON Semiconductor / Fairchild
描述:: IGBT Transistors 650V 150A 187W
生命週期:: 製造商新產品
數據表:: FGH75T65UPD 數據表
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ECAD Model:
更多信息:: FGH75T65UPD 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-247

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 650 V

集電極-發射極飽和電壓：: 2.3 V

最大柵極發射極電壓：: 20 V

25 C 時的連續集電極電流：: 150 A

Pd - 功耗：: 187 W

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

系列：: FGH75T65UPD

打包：: 管子

品牌：: 安森美半導體/飛兆半導體

柵極-發射極漏電流：: 400 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 450

子類別：: IGBT

單位重量：: 0.225401 oz

Tags: FGH75T65U, FGH75T, FGH7, FGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGH75T65UPD 描述

***ure Electronics: FGH75T65UPD Series 650 V 150 A 375 W Field Stop Trench IGBT - TO-247-3

***Yang: Trans IGBT Chip N-CH 650V 150A 3-Pin(3+Tab) TO-247AB Tube - Rail/Tube

***r Electronics: Insulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, N-Channel, TO-247

***emi: 650V, 75A, Field Stop Trench IGBT

*** Electronics: IGBT Transistors 650V 150A 187W

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.

***ical: Trans IGBT Chip N=-CH 650V 150A 455000mW Tube

***nell: IGBT, SINGLE, N-CH, 650V, 150A, TO-247-4; DC Collector Current: 150A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 455W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***icroelectronics: Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

***ical: Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube

***ark: IGBT, SINGLE, 650V, 120A, TO-247; Continuous Collector Current:120A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:469W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

***ical: Trans IGBT Chip N-CH 650V 120A 420000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW60H65DRF Series 650 V 120 A Field Stop Trench Gate IGBT - TO-247

***icroelectronics: 60 A, 650 V field stop trench gate IGBT with Ultrafast diode

***ical: Trans IGBT Chip N-CH 650V 150A 375000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, N-CH, 650V, 150A, TO-247-3; DC Collector Current: 150A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***ical: Trans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS

***nell: IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 395W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ical: Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: FGH60N60SMD Series 600 V 60 A Through Hole Field Stop IGBT - TO-247-3

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:600W

FGH75T65UPD 更多信息

Field Stop IGBTs: ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

FGAFx0N60 Field Stop IGBTs: ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.

Market price

型號	製造商	描述	庫存	價格
FGH75T65UPD DISTI # V99:2348_06359040	ON Semiconductor	650V FIELD STOP TRENCH IGBT	450	1:$2.5900
FGH75T65UPD DISTI # FGH75T65UPD-ND	ON Semiconductor	IGBT 650V 150A 375W TO-247AB RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call	450:$4.0116
FGH75T65UPD-F085 DISTI # FGH75T65UPD-F085-ND	ON Semiconductor	IGBT 650V 150A 375W TO-247AB RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call	450:$5.0224
FGH75T65UPD-F155 DISTI # FGH75T65UPD-F155-ND	ON Semiconductor	650V,75A FIELD STOP TRENCH IGBT RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call	450:$5.3550
FGH75T65UPD DISTI # 15004028	ON Semiconductor	650V FIELD STOP TRENCH IGBT	930	30:$2.7570
FGH75T65UPD DISTI # 31154998	ON Semiconductor	650V FIELD STOP TRENCH IGBT	450	3:$2.5900
FGH75T65UPD DISTI # FGH75T65UPD	ON Semiconductor	Trans IGBT Chip N-CH 650V 150A 3-Pin(3+Tab) TO-247AB Tube - Rail/Tube (Alt: FGH75T65UPD) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 600	450:$2.5900 900:$2.5900 1800:$2.5900 2700:$2.5900 4500:$2.4900
FGH75T65UPD DISTI # FGH75T65UPD	ON Semiconductor	Trans IGBT Chip N-CH 650V 150A 3-Pin(3+Tab) TO-247AB Tube (Alt: FGH75T65UPD) RoHS: Compliant Min Qty: 450 Container: Tube	Asia - 0
FGH75T65UPD_F085 DISTI # FGH75T65UPD-F085	ON Semiconductor	Trans IGBT Chip N-CH 650V 150A 3-Pin TO-247AB Rail - Rail/Tube (Alt: FGH75T65UPD-F085) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$3.5900 900:$3.5900 1800:$3.5900 2700:$3.4900 4500:$3.3900
FGH75T65UPD-F155 DISTI # FGH75T65UPD_F155	ON Semiconductor	Field Stop Trench IGBT 650V 75A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGH75T65UPD_F155) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0
FGH75T65UPD-F155 DISTI # FGH75T65UPD-F155	ON Semiconductor	Field Stop Trench IGBT 650V 75A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGH75T65UPD-F155) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$3.8900 900:$3.7900 1800:$3.7900 2700:$3.6900 4500:$3.6900
FGH75T65UPD-F085 DISTI # 57AC1891	ON Semiconductor		445	1:$6.3200 10:$5.7000 25:$5.1800 50:$4.8300 100:$4.5000 250:$3.7800 500:$3.6600
FGH75T65UPD-F155 DISTI # 48AC1120	ON Semiconductor	FS1TIGBT TO247 75A 650V / TUBE	0	1:$7.8900 100:$6.4500 250:$5.9100 500:$5.4900 1000:$5.1600
FGH75T65UPD DISTI # 512-FGH75T65UPD	ON Semiconductor	IGBT Transistors 650V 150A 187W RoHS: Compliant	374	1:$5.4700 10:$4.6500 100:$4.0300 250:$3.8300
FGH75T65UPD-F085 DISTI # 512-FGH75T65UPD_F085	ON Semiconductor	IGBT Transistors 650V/75A FS TRENCH IGBT RoHS: Compliant	1495	1:$6.7000 10:$6.0500 25:$5.7700 100:$5.0100 250:$4.7900 500:$4.3700 1000:$3.8000
FGH75T65UPD-F155 DISTI # 512-FGH75T65UPD_F155	ON Semiconductor	IGBT Transistors 650V,75A Field Stop Trench IGBT RoHS: Compliant	446	1:$7.1400 10:$6.4600 25:$6.1600 100:$5.3400 250:$5.1100
FGH75T65UPD	ON Semiconductor	FGH75T65UPD Series 650 V 150 A 375 W Field Stop Trench IGBT - TO-247-3 RoHS: Compliant	450Tray	30:$4.8800 60:$3.9700 150:$3.7900 300:$3.6600
FGH75T65UPD-F085 DISTI # 2860235	ON Semiconductor	IGBT, AEC-Q101, 650V, 150A, TO-247 RoHS: Compliant	445	1:£6.9600 5:£6.3400 10:£5.4500
FGH75T65UPD-F085 DISTI # 2860235	ON Semiconductor	IGBT, AEC-Q101, 650V, 150A, TO-247 RoHS: Compliant	445	1:$11.6400 5:$10.1500 10:$8.7900 50:$7.9100 100:$6.9400 250:$6.2800

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