QPD1008L

QPD1008L
Mfr. #:
QPD1008L
製造商:
Qorvo
描述:
RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
生命週期:
製造商新產品
數據表:
QPD1008L 數據表
交貨:
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ECAD Model:
更多信息:
QPD1008L 更多信息
產品屬性
屬性值
製造商:
科沃
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
HEMT
技術:
氮化鎵碳化矽
獲得:
17.5 dB
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
50 V
Vgs - 柵源擊穿電壓:
145 V
Id - 連續漏極電流:
4 A
輸出功率:
162 W
最低工作溫度:
- 40 C
最高工作溫度:
+ 85 C
Pd - 功耗:
127 W
安裝方式:
螺絲安裝
包裝/案例:
NI-360
打包:
托盤
配置:
單身的
工作頻率:
3.2 GHz
工作溫度範圍:
- 40 C to + 85 C
系列:
QPD
品牌:
科沃
開發套件:
QPD1008LPCB401
濕氣敏感:
是的
產品類別:
射頻 JFET 晶體管
出廠包裝數量:
25
子類別:
晶體管
Vgs th - 柵源閾值電壓:
- 2.8 V
Tags
QPD100, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Transistor, DC - 3.2 GHz, 125 W, 50 V, GaN, Eared NI-360
***hardson RFPD
RF POWER TRANSISTOR
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型號 製造商 描述 庫存 價格
QPD1008L
DISTI # QPD1008L-ND
RF Micro Devices IncRF TRANSISTOR 125W 50V NI-360
RoHS: Compliant
Container: Bulk
Limited Supply - Call
    QPD1008L
    DISTI # 772-QPD1008L
    QorvoRF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
    RoHS: Compliant
    43
    • 1:$200.0000
    • 25:$173.0000
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    AD8211YRJZ-RL7

    Mfr.#: AD8211YRJZ-RL7

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    Mfr.#: CGHV40180F

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    T2G6003028-FL

    Mfr.#: T2G6003028-FL

    OMO.#: OMO-T2G6003028-FL

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    AD8211YRJZ-RL7

    Mfr.#: AD8211YRJZ-RL7

    OMO.#: OMO-AD8211YRJZ-RL7-ANALOG-DEVICES-INC-ADI

    Current Sense Amplifiers IC High VTG
    QPA6489ATR13

    Mfr.#: QPA6489ATR13

    OMO.#: OMO-QPA6489ATR13-1152

    RF Amplifier DC-3500MHz NF3.4dB P1dB 19.4dBm
    T2G6003028-FL

    Mfr.#: T2G6003028-FL

    OMO.#: OMO-T2G6003028-FL-318

    RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
    可用性
    庫存:
    Available
    訂購:
    2500
    輸入數量:
    QPD1008L的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$200.00
    US$200.00
    25
    US$173.00
    US$4 325.00
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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