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FCP067N65S3

FCP067N65S3
Mfr. #:
FCP067N65S3
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 650V 44A N-Channel SuperFET MOSFET
生命週期:
製造商新產品
數據表:
FCP067N65S3 數據表
交貨:
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HTML Datasheet:
FCP067N65S3 DatasheetFCP067N65S3 Datasheet (P4-P6)FCP067N65S3 Datasheet (P7-P9)FCP067N65S3 Datasheet (P10-P11)
ECAD Model:
更多信息:
FCP067N65S3 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
650 V
Id - 連續漏極電流：
44 A
Rds On - 漏源電阻：
67 mOhms
Vgs th - 柵源閾值電壓：
2.5 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
78 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
312 W
配置：
單身的
頻道模式：
增強
商品名：
超場效應晶體管 III
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
系列：
FCP067N65S3
晶體管類型：
1 N-Channel
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
秋季時間：
16 ns
產品類別：
MOSFET
上升時間：
52 ns
出廠包裝數量：
800
子類別：
MOSFET
典型關斷延遲時間：
89 ns
典型的開啟延遲時間：
26 ns
單位重量：
0.063493 oz
Tags
FCP06, FCP0, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-220
***Components
In a Tube of 800, N-Channel MOSFET, 44 A, 650 V, 3-Pin TO-220 ON Semiconductor FCP067N65S3
***ical
Trans MOSFET N-CH 650V 44A Tube
***et Europe
N-Channel SuperFET III MOSFET
***i-Key
SUPERFET3 650V 67 MOHM TO220 PKG
***ark
Mosfet, N-Ch, 650V, 44A, To-220-3L; Transistor Polarity:n Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.059Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 44A, TO-220-3L; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:312W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advancedtechnology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dtrate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency
***nell
MOSFET, CAN-N, 650V, 44A, TO-220-3L; Polarità Transistor:Canale N; Corrente Continua di Drain Id:44A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.059ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:312W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
SuperFET® III MOSFETs
ON Semiconductor SuperFET® III MOSFETs are high voltage (700V at TJ = 150ºC) super-junction (SJ) MOSFETs with charge balance technology. This technology provides outstanding low on-resistance (59mΩ or 62mΩ RDS(on) typical) and lower gate charge performance (78nC Qg typical). SuperFET III MOSFETs are designed to minimize conduction loss, offer superior switching performance, and withstand extreme rise rate of the drain-source voltage (dv/dt). Fairchild SuperFET III is ideal for various power systems for miniaturization and higher efficiency.
型號 製造商 描述 庫存 價格
FCP067N65S3
DISTI # V99:2348_16116286		ON SemiconductorSUPERFET3 650V 67 MOHM TO220 P651
  • 1000:$2.4650
  • 500:$2.8980
  • 250:$3.2020
  • 100:$3.4670
  • 10:$4.0000
  • 1:$5.1678
FCP067N65S3
DISTI # V36:1790_16116286		ON SemiconductorSUPERFET3 650V 67 MOHM TO220 P0
  • 800000:$2.0840
  • 400000:$2.0890
  • 80000:$2.7360
  • 8000:$4.0590
  • 800:$4.2900
FCP067N65S3
DISTI # FCP067N65S3-ND		ON SemiconductorMOSFET N-CH 650V 44A TO220
RoHS: Compliant
Min Qty: 1
Container: Bulk		283In Stock
  • 1000:$2.6303
  • 500:$3.1187
  • 100:$3.6636
  • 10:$4.4710
  • 1:$4.9800
FCP067N65S3
DISTI # 32444201		ON SemiconductorSUPERFET3 650V 67 MOHM TO220 P800
  • 800:$2.3871
FCP067N65S3
DISTI # 33695905		ON SemiconductorSUPERFET3 650V 67 MOHM TO220 P651
  • 3:$5.1678
FCP067N65S3
DISTI # FCP067N65S3		ON SemiconductorN-Channel SuperFET III MOSFET (Alt: FCP067N65S3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.9900
  • 500:€2.1900
  • 50:€2.2900
  • 100:€2.2900
  • 25:€2.3900
  • 10:€2.4900
  • 1:€2.7900
FCP067N65S3
DISTI # FCP067N65S3		ON SemiconductorN-Channel SuperFET III MOSFET - Rail/Tube (Alt: FCP067N65S3)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 3200:$2.1900
  • 4800:$2.1900
  • 8000:$2.1900
  • 800:$2.2900
  • 1600:$2.2900
FCP067N65S3
DISTI # 84Y5814		ON SemiconductorMOSFET, N-CH, 650V, 44A, TO-220-3L,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.059ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes796
  • 500:$4.5700
  • 250:$5.0000
  • 100:$5.2100
  • 50:$5.4300
  • 25:$5.6600
  • 10:$5.8800
  • 1:$6.7600
FCP067N65S3
DISTI # 512-FCP067N65S3		ON SemiconductorMOSFET 650V 44A N-Channel SuperFET MOSFET
RoHS: Compliant		3564
  • 1:$4.7300
  • 10:$4.0200
  • 100:$3.4800
  • 250:$3.3100
  • 500:$2.9700
  • 1000:$2.5600
FCP067N65S3
DISTI # 1723424		ON SemiconductorN-CHANNEL SUPERFET MOSFET 650V 44A TO220, TU2345
  • 1600:£2.3140
  • 800:£2.4690
FCP067N65S3
DISTI # 2565216		ON SemiconductorMOSFET, N-CH, 650V, 44A, TO-220-3L796
  • 500:£2.2600
  • 250:£2.5200
  • 100:£2.6600
  • 10:£3.0700
  • 1:£4.0200
FCP067N65S3
DISTI # 2565216		ON SemiconductorMOSFET, N-CH, 650V, 44A, TO-220-3L
RoHS: Compliant		796
  • 1000:$4.2200
  • 500:$4.9900
  • 100:$6.1700
  • 10:$7.5200
  • 1:$8.4100
FCP067N65S3ON Semiconductor 6300
  • 1:$6.6300
  • 100:$4.2400
  • 500:$3.4900
  • 1000:$3.2100
圖片 型號 描述
UCC24624DT

Mfr.#: UCC24624DT

OMO.#: OMO-UCC24624DT

 Gate Drivers UCC24624D
IRS2153DPBF

Mfr.#: IRS2153DPBF

OMO.#: OMO-IRS2153DPBF

 Gate Drivers Self-Osc Half Bridge Drvr 1.1us
NTP082N65S3F

Mfr.#: NTP082N65S3F

OMO.#: OMO-NTP082N65S3F

 MOSFET SF3 FRFET 650V 82MOHM
NTHL082N65S3F

Mfr.#: NTHL082N65S3F

OMO.#: OMO-NTHL082N65S3F

 MOSFET SUPERFET3 650V TO247 N-CHANNEL
C3D08065A

Mfr.#: C3D08065A

OMO.#: OMO-C3D08065A

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 650V, 8A
B32933B3105K000

Mfr.#: B32933B3105K000

OMO.#: OMO-B32933B3105K000

 Film Capacitors FILM CAP 0.56uF 10% 1250Vdc LS 27.5mm
IRS2153DPBF

Mfr.#: IRS2153DPBF

OMO.#: OMO-IRS2153DPBF-INFINEON-TECHNOLOGIES

 Gate Drivers Self-Osc Half Bridge Drvr 1.1us
NTHL082N65S3F

Mfr.#: NTHL082N65S3F

OMO.#: OMO-NTHL082N65S3F-ON-SEMICONDUCTOR

 SUPERFET3 650V TO247
NTP082N65S3F

Mfr.#: NTP082N65S3F

OMO.#: OMO-NTP082N65S3F-ON-SEMICONDUCTOR

 MOSFET N-CH 650V 82 MOHM TO220 P
B32932A3473K000

Mfr.#: B32932A3473K000

OMO.#: OMO-B32932A3473K000-EPCOS

 CAP, SUP, X2, PET, 0.047UF, 305V, RAD
可用性
庫存:
Available
訂購:
1984
輸入數量:
FCP067N65S3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$4.73
US$4.73
10
US$4.02
US$40.20
100
US$3.48
US$348.00
250
US$3.31
US$827.50
500
US$2.97
US$1 485.00
1000
US$2.56
US$2 560.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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