IPB180N03S4L-01

Mfr. #:: IPB180N03S4L-01
製造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2
生命週期:: 製造商新產品
數據表:: IPB180N03S4L-01 數據表
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更多信息:: IPB180N03S4L-01 更多信息

產品屬性
屬性值

製造商: 英飛凌

產品分類: FET - 單

系列: OptiMOS-T2

打包: 捲軸

部分別名: IPB180N03S4L01ATMA1 IPB180N03S4L01XT SP000555002

單位重量: 0.056438 oz

安裝方式: 貼片/貼片

商品名: 優化MOS

包裝盒: TO-263-7

技術: 矽

通道數: 1 Channel

晶體管型: 1 N-Channel

鈀功耗: 188 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 23 ns

上升時間: 5 ns

VGS-柵極-源極-電壓: 16 V

Id 連續漏極電流: 180 A

Vds-漏-源-擊穿電壓: 30 V

Rds-On-Drain-Source-Resistance: 1.05 mOhms

晶體管極性: N通道

典型關斷延遲時間: 57 ns

典型開啟延遲時間: 8 ns

Qg-門電荷: 187 nC

Tags: IPB180N03, IPB180N0, IPB180N, IPB18, IPB1, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB180N03S4L-01 更多信息

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

20V to 40V N-Channel Automotive MOSFETs: Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

型號	製造商	描述	庫存	價格
IPB180N03S4L01ATMA1 DISTI # V72:2272_06383155	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0
IPB180N03S4L01ATMA1 DISTI # V36:1790_06383155	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$1.0010 500000:$1.0030 100000:$1.1120 10000:$1.2810 1000:$1.3090
IPB180N03S4L01ATMA1 DISTI # IPB180N03S4L01ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 180A TO263-7-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.3086
IPB180N03S4L-01 DISTI # IPB180N03S4L-01	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R - Bulk (Alt: IPB180N03S4L-01) RoHS: Not Compliant Min Qty: 325 Container: Bulk	Americas - 0	3250:$0.9779 1625:$0.9959 975:$1.0299 650:$1.0689 325:$1.1089
IPB180N03S4L01ATMA1 DISTI # IPB180N03S4L01ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Bulk (Alt: IPB180N03S4L01ATMA1) RoHS: Compliant Min Qty: 325 Container: Bulk	Americas - 0	3250:$0.9779 1625:$0.9959 975:$1.0299 650:$1.0689 325:$1.1089
IPB180N03S4L01ATMA1 DISTI # IPB180N03S4L01ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB180N03S4L01ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$1.0919 6000:$1.1109 4000:$1.1499 2000:$1.1929 1000:$1.2379
IPB180N03S4L01ATMA1 DISTI # SP000555002	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 (Alt: SP000555002) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€1.0409 6000:€1.0829 4000:€1.1179 2000:€1.2049 1000:€1.5499
IPB180N03S4L-01 DISTI # 726-IPB180N03S4L-01	Infineon Technologies AG	MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 RoHS: Compliant	105	1:$2.5200 10:$2.1400 100:$1.7100 500:$1.5000 1000:$1.2400 2000:$1.1600 5000:$1.1100
IPB180N03S4L-01	Infineon Technologies AG	Power Field-Effect Transistor, 180A I(D), 30V, 0.00105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 RoHS: Compliant	492	1000:$1.1300 500:$1.1900 100:$1.2400 25:$1.2900 1:$1.3900
IPB180N03S4L01ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 180A I(D), 30V, 0.00105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 RoHS: Compliant	1856	1000:$1.0100 500:$1.0700 100:$1.1100 25:$1.1600 1:$1.2500

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