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FGH20N60UFDTU

FGH20N60UFDTU
Mfr. #:
FGH20N60UFDTU
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 600V 20A Field Stop
生命週期:
製造商新產品
數據表:
FGH20N60UFDTU 數據表
交貨:
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ECAD Model:
更多信息:
FGH20N60UFDTU 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247AB-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
最大柵極發射極電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
系列：
FGH20N60UFD
打包：
管子
連續集電極電流 Ic 最大值：
40 A
高度：
20.6 mm
長度：
15.6 mm
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
產品類別：
IGBT晶體管
出廠包裝數量：
450
子類別：
IGBT
單位重量：
0.225401 oz
Tags
FGH20N60UFDT, FGH20N60U, FGH20N60, FGH20N, FGH20, FGH2, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Tube
***ure Electronics
FGH20N60UFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:165W
***ical
Trans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Rail
***ure Electronics
FGH20N60SFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
*** Source Electronics
High current capability, High input impedance | IGBT 600V 40A 165W TO247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:165W
***ical
Trans IGBT Chip N=-CH 600V 40A 166000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
IKW20N60T Series 600 V 40 A Through Hole TRENCHSTOP™ IGBT -PG-TO247-3
***ineon SCT
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, N, 600V, 20A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.05V; Power Dissipation Pd: 166W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; Operating Temper
***ark
IGBT, N, 600V, 20A, TO-247; Transistor Type:IGBT; Voltage, Vces:600V; Current, Ic Continuous a Max:20A; Voltage, Vce Sat Max:2.05V; Power Dissipation:166W; Case Style:TO-247; Termination Type:Through Hole; Transistor Polarity:N; RoHS Compliant: Yes
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 20 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 166 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
***ure Electronics
FGH80N60FD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***ical
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 40A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins:
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 3.5pF 50volts C0G +/-0.05pF
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin TO-247 Tube
*** Electronic Components
IGBT Transistors IGBT PRODUCTS TrenchStop
***or
IKW20N60 - AUTOMOTIVE IGBT DISCR
***i-Key
IGBT, 40A I(C), 600V V(BR)CES, N
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
***ure Electronics
FGH40N60UFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***-Wing Technology
FAIRCHILD SEMICONDUCTOR FGH40N60UFDTU IGBT Single Transistor, General Purpose, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 Pins
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
型號 製造商 描述 庫存 價格
FGH20N60UFDTU
DISTI # V36:1790_06359268		ON SemiconductorTrans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Rail350
  • 10000:$1.0496
  • 5000:$1.0989
  • 2500:$1.1488
  • 1000:$1.2304
  • 500:$1.4550
  • 100:$1.6306
  • 10:$1.9653
  • 1:$2.2523
FGH20N60UFDTU
DISTI # FGH20N60UFDTU-ND		ON SemiconductorIGBT 600V 40A 165W TO247
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$1.9320
FGH20N60UFDTU
DISTI # 31074588		ON SemiconductorTrans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Rail350
  • 100:$1.6306
  • 10:$1.9653
  • 6:$2.2523
FGH20N60UFDTU
DISTI # FGH20N60UFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247AB Tube - Rail/Tube (Alt: FGH20N60UFDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.1900
  • 900:$1.0900
  • 1800:$1.0900
  • 2700:$1.0900
  • 4500:$1.0900
FGH20N60UFDTU
DISTI # 512-FGH20N60UFDTU		ON SemiconductorIGBT Transistors 600V 20A Field Stop
RoHS: Compliant		328
  • 1:$2.7000
  • 10:$2.3000
  • 100:$1.8400
  • 500:$1.6100
  • 1000:$1.3300
  • 2500:$1.2400
  • 5000:$1.1900
FGH20N60UFDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AB
RoHS: Compliant		14550
  • 1000:$1.3400
  • 500:$1.4100
  • 100:$1.4700
  • 25:$1.5300
  • 1:$1.6500
FGH20N60UFDTU
DISTI # 1885733		ON SemiconductorIGBT,N CH,FAST,W/DIO,600V,40A,TO247
RoHS: Compliant		0
  • 1:$4.2900
  • 10:$3.6500
  • 100:$2.9100
  • 500:$2.5700
  • 1000:$2.1300
  • 2500:$1.9800
  • 5000:$1.9100
  • 10000:$1.8200
FGH20N60UFDTU
DISTI # C1S541901396741		ON SemiconductorTrans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Tube
RoHS: Compliant		350
  • 500:$1.4550
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可用性
庫存:
39
訂購:
2022
輸入數量:
FGH20N60UFDTU的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$2.70
US$2.70
10
US$2.30
US$23.00
100
US$1.84
US$184.00
500
US$1.61
US$805.00
1000
US$1.33
US$1 330.00
2500
US$1.24
US$3 100.00
5000
US$1.19
US$5 950.00
10000
US$1.15
US$11 500.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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