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FDMC7572S

FDMC7572S
Mfr. #:
FDMC7572S
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 25V 40A 3.2mOhm N-Ch PowerTrench SyncFET
生命週期:
製造商新產品
數據表:
FDMC7572S 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
FDMC7572S 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
Power-33-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
25 V
Id - 連續漏極電流：
40 A
Rds On - 漏源電阻：
3.2 mOhms
Vgs th - 柵源閾值電壓：
1.7 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
52 W
配置：
單身的
商品名：
同步場效應晶體管
打包：
捲軸
高度：
0.8 mm
長度：
3.3 mm
系列：
FDMC7572S
晶體管類型：
1 N-Channel
寬度：
3.3 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
122 S
秋季時間：
3 ns
產品類別：
MOSFET
上升時間：
3.6 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
26 ns
典型的開啟延遲時間：
11 ns
單位重量：
0.001133 oz
Tags
FDMC75, FDMC7, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 25 V 0.00315 ohm Surface Mount PowerTrench SyncFET Mosfet Power 33
*** Stop Electro
Power Field-Effect Transistor, 22.5A I(D), 25V, 0.00315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00215ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:52W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ
***r Electronics
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
N-Channel PowerTrench® SyncFET™ 30V, 42A, 3mΩ
***r Electronics
Power Field-Effect Transistor, 113A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
***ponent Sense
MOSFET 30V 50A 69W 2.5mohm @ 10V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N CH, 30V, 50A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.05mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 30 V 0.0031 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
*** Source Electronics
MOSFET N-CH 30V 50A PPAK SO-8 / Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO EP T/R
***ment14 APAC
MOSFET, N-CH, 30V, 50A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***et
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
FDMx75x PowerTrench® MOSFETs & SyncFETs™
ON Semiconductor FDMx757x PowerTrench® MOSFETs and SyncFETs™ combine exceptional performance and high efficiency. The FDMC7570S and FDMC7572S PowerTrench SyncFETs are designed to minimize switching losses in power conversion applications. These SyncFETs offer low ON-resistance, maintain excellent switching performance, and add the benefit of an efficient monolithic Schottky body diode. The FDMS7578 and FDMS75780 MOSFETs improve the overall efficiency and minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs are optimized for low gate charge, low on-resistance, fast switching speed, and body diode reverse recovery performance.
型號 製造商 描述 庫存 價格
FDMC7572S
DISTI # 26637111		ON SemiconductorPT7 25V/20V NCH POWERTRENCH SY18000
  • 3000:$0.9052
FDMC7572S
DISTI # 27073661		ON SemiconductorPT7 25V/20V NCH POWERTRENCH SY3000
  • 3000:$1.0296
FDMC7572S
DISTI # 19272842		ON SemiconductorPT7 25V/20V NCH POWERTRENCH SY1818
  • 123:$0.5112
FDMC7572S
DISTI # FDMC7572SCT-ND		ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDMC7572S
    DISTI # FDMC7572SDKR-ND    		ON SemiconductorMOSFET N-CH 25V 40A POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDMC7572S
      DISTI # FDMC7572STR-ND      		ON SemiconductorMOSFET N-CH 25V 40A POWER33
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$1.2028
      FDMC7572S
      DISTI # C1S541901390905      		ON SemiconductorTrans MOSFET N-CH Si 25V 22.5A 8-Pin Power 33 T/R
      RoHS: Compliant      		3000
      • 3000:$1.2200
      FDMC7572S
      DISTI # FDMC7572S      		ON SemiconductorTrans MOSFET N-CH 25V 22.5A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC7572S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$1.0119
      • 6000:$1.0089
      • 12000:$1.0059
      • 18000:$1.0029
      • 30000:$0.9999
      FDMC7572S
      DISTI # FDMC7572S      		ON SemiconductorTrans MOSFET N-CH 25V 22.5A 8-Pin Power 33 T/R (Alt: FDMC7572S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Asia - 0
        FDMC7572S
        DISTI # FDMC7572S        		ON SemiconductorTrans MOSFET N-CH 25V 22.5A 8-Pin Power 33 T/R (Alt: FDMC7572S)
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape and Reel        		Europe - 0
        • 3000:€1.4079
        • 6000:€1.1729
        • 12000:€1.0829
        • 18000:€1.0059
        • 30000:€0.9389
        FDMC7572S
        DISTI # 85W3144        		ON SemiconductorTrans MOSFET N-CH 25V 22.5A 8-Pin Power 33 T/R - Product that comes on tape, but is not reeled (Alt: 85W3144)
        RoHS: Compliant
        Min Qty: 1
        Container: Ammo Pack        		Americas - 0
        • 1:$1.1800
        FDMC7572S
        DISTI # 92R5534        		ON SemiconductorMOSFET Transistor, N Channel, 40 A, 25 V, 0.0025 ohm, 10 V, 1.7 V RoHS Compliant: Yes0
        • 1:$1.0800
        • 9000:$1.0400
        FDMC7572S
        DISTI # 85W3144        		ON SemiconductorMOSFET, N CHANNEL, 25V, 0.0025OHM, 40A, POWER 33-8,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:52WRoHS Compliant: Yes1818
        • 1:$0.4090
        • 25:$0.4090
        • 50:$0.4090
        • 100:$0.4090
        • 250:$0.4090
        • 500:$0.4090
        • 1000:$0.4090
        FDMC7572SON SemiconductorN-Channel 25 V 0.00315 ohm Surface Mount PowerTrench SyncFET Mosfet Power 33
        RoHS: Compliant        		3000Reel
        • 3000:$1.1600
        FDMC7572SFairchild Semiconductor CorporationPower Field-Effect Transistor, 22.5A I(D), 25V, 0.00315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
        RoHS: Compliant        		49729
        • 1000:$1.1800
        • 500:$1.2500
        • 100:$1.3000
        • 25:$1.3500
        • 1:$1.4600
        FDMC7572S
        DISTI # 2459641        		ON SemiconductorMOSFET, N CHANNEL, 25V, 0.0025OHM, 40A,
        RoHS: Compliant        		1818
        • 1:£2.1100
        • 25:£1.7900
        • 50:£1.6300
        • 100:£1.4400
        • 250:£1.3500
        FDMC7572S
        DISTI # XSFP00000096384        		Fairchild Semiconductor Corporation 
        RoHS: Compliant        		4038
        • 3000:$1.5500
        • 4038:$1.4500
        FDMC7572S
        DISTI # 2459641        		ON SemiconductorMOSFET, N CHANNEL, 25V, 0.0025OHM, 40A, POWER 33-8
        RoHS: Compliant        		1818
        • 3000:$3.2900
        圖片 型號 描述
        FDMC010N08C

        Mfr.#: FDMC010N08C

        OMO.#: OMO-FDMC010N08C

        		 MOSFET PTNG 80/20V IN 51A 10 mOhm
        FDMC8321L

        Mfr.#: FDMC8321L

        OMO.#: OMO-FDMC8321L

        		 MOSFET 40V N-Channel PowerTrench MOSFET
        FDMC86340

        Mfr.#: FDMC86340

        OMO.#: OMO-FDMC86340

        		 MOSFET 80V N Chan Shielded Gate Power Trench
        FDMC86116LZ

        Mfr.#: FDMC86116LZ

        OMO.#: OMO-FDMC86116LZ

        		 MOSFET 100V/20V w/Zener NCH PowerTrench MOSFET
        FDMC86106LZ

        Mfr.#: FDMC86106LZ

        OMO.#: OMO-FDMC86106LZ

        		 MOSFET 100V N-Channel PowerTrench MOSFET
        FDMC8200S

        Mfr.#: FDMC8200S

        OMO.#: OMO-FDMC8200S

        		 MOSFET 30V Dual N-Channel PowerTrench MOSFET
        FDMC86570L

        Mfr.#: FDMC86570L

        OMO.#: OMO-FDMC86570L-ON-SEMICONDUCTOR

        		 MOSFET N-CH 60V 56A POWER33
        FDMC510P

        Mfr.#: FDMC510P

        OMO.#: OMO-FDMC510P-ON-SEMICONDUCTOR

        		 MOSFET P-CH 20V 18A 8-MLP
        FDMC8200

        Mfr.#: FDMC8200

        OMO.#: OMO-FDMC8200-ON-SEMICONDUCTOR

        		 MOSFET 2N-CH 30V 8A/12A POWER33
        FDMC8015L-CUT TAPE

        Mfr.#: FDMC8015L-CUT TAPE

        OMO.#: OMO-FDMC8015L-CUT-TAPE-1190

        		 全新原裝
        可用性
        庫存:
        Available
        訂購:
        1984
        輸入數量:
        FDMC7572S的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$2.38
        US$2.38
        10
        US$2.02
        US$20.20
        100
        US$1.62
        US$162.00
        500
        US$1.41
        US$705.00
        1000
        US$1.17
        US$1 170.00
        由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
        從...開始
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