IPW60R037CSFDXKSA1

Mfr. #:: IPW60R037CSFDXKSA1
製造商:: Infineon Technologies
描述:: MOSFET HIGH POWER_NEW
生命週期:: 製造商新產品
數據表:: IPW60R037CSFDXKSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: IPW60R037CSFDXKSA1 更多信息

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-247-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 650 V

Id - 連續漏極電流：: 54 A

Rds On - 漏源電阻：: 37 mOhms

Vgs th - 柵源閾值電壓：: 3.5 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 136 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 245 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

晶體管類型：: 1 N-Channel

品牌：: 英飛凌科技

秋季時間：: 6 ns

產品類別：: MOSFET

上升時間：: 30 ns

出廠包裝數量：: 240

子類別：: MOSFET

典型關斷延遲時間：: 196 ns

典型的開啟延遲時間：: 53 ns

第 # 部分別名：: IPW60R037CSFD SP001927820

Tags: IPW60R037, IPW60R03, IPW60R0, IPW60, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW60R037CSFDXKSA1 描述

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 650V, 54A, 150DEG C, 245W;

***ark: MOSFET, N-CH, 650V, 54A, 150DEG C, 245W ROHS COMPLIANT: YES

***ical: Trans MOSFET N-CH 600V 54A Automotive Tube

***nell: MOSFET, CAN N, 650V, 54A, 150°C, 245W;

***ronik: N-CH 600V 54A 31mOhm TO-247-3

***i-Key: HIGH POWER_NEW

IPW60R037CSFDXKSA1 更多信息

IPW60R037CSFD CoolMOS™ Superjunction MOSFET: Infineon Technologies IPW60R037CSFD CoolMOS™ Superjunction MOSFET is optimized to address the off-board EV-charging market segment. The device has a low gate charge (Qg) and improved switching behavior with high efficiency. The device features an integrated fast body diode that tremendously reduces reverse recovery charge (Qrr) leading to high reliability in resonant topologies. The IPW60R037CSFD meets efficiency and reliability standards of off-board EV-charging and supports high-power density solutions.

Market price

型號	製造商	描述	庫存	價格
IPW60R037CSFDXKSA1 DISTI # V99:2348_19082806	Infineon Technologies AG	IPW60R037CSFD	0
IPW60R037CSFDXKSA1 DISTI # IPW60R037CSFDXKSA1-ND	Infineon Technologies AG	HIGH POWER_NEW RoHS: Compliant Min Qty: 240 Container: Tube	Temporarily Out of Stock	240:$10.6467
IPW60R037CSFDXKSA1 DISTI # IPW60R037CSFDXKSA1	Infineon Technologies AG	HIGH POWER_NEW - Rail/Tube (Alt: IPW60R037CSFDXKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	240:$8.1900 480:$7.8900 960:$7.5900 1440:$7.2900 2400:$7.1900
IPW60R037CSFDXKSA1 DISTI # SP001927820	Infineon Technologies AG	HIGH POWER_NEW (Alt: SP001927820) RoHS: Compliant Min Qty: 1	Europe - 0	1:€7.5900 10:€7.3900 25:€7.2900 50:€6.8900 100:€6.7900 500:€6.6900 1000:€6.5900
IPW60R037CSFDXKSA1 DISTI # 726-IPW60R037CSFDXKS	Infineon Technologies AG	Infineon HIGH POWER_NEW RoHS: Compliant	0	240:$9.2800 480:$8.8200 720:$8.2500

相關產品

圖片	型號	描述
	Mfr.#: IPW60R037P7XKSA1 OMO.#: OMO-IPW60R037P7XKSA1	MOSFET
	Mfr.#: IPW60R037CSFDXKSA1 OMO.#: OMO-IPW60R037CSFDXKSA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPW60R037CSFDXKSA1 OMO.#: OMO-IPW60R037CSFDXKSA1-INFINEON-TECHNOLOGIES	HIGH POWER_NEW
	Mfr.#: IPW60R037CSFD OMO.#: OMO-IPW60R037CSFD-1190	SP001927820 (Alt: IPW60R037CSFD)
	Mfr.#: IPW60R037P7 OMO.#: OMO-IPW60R037P7-1190	N-CH 600V 76A 37mOhm TO-247
	Mfr.#: IPW60R037P7XKSA1 OMO.#: OMO-IPW60R037P7XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 76A TO247-3