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SIE802DF-T1-E3

SIE802DF-T1-E3
Mfr. #:
SIE802DF-T1-E3
製造商:
Vishay
描述:
MOSFET N-CH 30V 60A 10-POLARPAK
生命週期:
製造商新產品
數據表:
SIE802DF-T1-E3 數據表
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ECAD Model:
更多信息:
SIE802DF-T1-E3 更多信息
產品屬性
屬性值
製造商
威世
產品分類
FET - 單
打包
捲軸
部分別名
SIE802DF-E3
安裝方式
貼片/貼片
包裝盒
PolarPAK-10
技術
矽
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
5.2 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
20 ns 10 ns
上升時間
195 ns 20 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
42.7 A
Vds-漏-源-擊穿電壓
30 V
Rds-On-Drain-Source-Resistance
1.9 mOhms
晶體管極性
N通道
典型關斷延遲時間
45 ns 65 ns
典型開啟延遲時間
45 ns 25 ns
通道模式
增強
Tags
SIE80, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.0019 Ohms Surface Mount Power Mosfet - PolarPAK
***ical
Trans MOSFET N-CH Si 30V 42.7A 10-Pin PolarPAK T/R
***p One Stop Global
Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK T/R
***C
Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK
***ponent Sense
TRANS N-CH 30V-TRANSISTOR FET N-CH
***i-Key
MOSFET N-CH 30V 60A 10-POLARPAK
***
N-CHANNEL 30-V (D-S) MOSFET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0026ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.2V ;RoHS Compliant: Yes
***nell
MOSFET, N, POLAR PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:202A; Resistance, Rds On:0.0019ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.2V; Case Style:PolarPAK; Termination Type:SMD; Base Number:802; Current, Idm Pulse:100A; N-channel Gate Charge:50nC; Power Dissipation:125mW; Power, Pd:125W; Resistance, Rds on @ Vgs = 10V:0.0019ohm; Resistance, Rds on @ Vgs = 4.5V:0.0026ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:30V; Voltage, Vgs th Max:3.7V; Voltage, Vgs th Min:1.5V
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
型號 製造商 描述 庫存 價格
SIE802DF-T1-E3
DISTI # V72:2272_09215702		Vishay IntertechnologiesTrans MOSFET N-CH Si 30V 42.7A 10-Pin PolarPAK T/R
RoHS: Compliant		0
    SIE802DF-T1-E3
    DISTI # SIE802DF-T1-E3TR-ND    		Vishay SiliconixMOSFET N-CH 30V 60A 10-POLARPAK
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 3000:$1.8574
    SIE802DF-T1-E3
    DISTI # SIE802DF-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE802DF-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 18000:$1.6900
    • 30000:$1.6900
    • 6000:$1.7900
    • 12000:$1.7900
    • 3000:$1.8900
    SIE802DF-T1-E3
    DISTI # 781-SIE802DF-T1-E3    		Vishay IntertechnologiesMOSFET 30V 60A 125W 1.9mohm @ 10V
    RoHS: Compliant    		3000
    • 1:$3.7200
    • 10:$3.0800
    • 100:$2.5400
    • 250:$2.4600
    • 500:$2.2000
    • 1000:$1.8600
    • 3000:$1.7600
    SIE802DF-T1-E3Vishay Intertechnologies 1106
      SIE802DF-T1-E3Vishay Semiconductors42.7 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET100
      • 11:$1.8000
      • 4:$2.4000
      • 1:$3.6000
      SIE802DF-T1-E3Vishay Siliconix42.7 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET19
      • 11:$1.8000
      • 4:$2.4000
      • 1:$3.6000
      SIE802DF-T1-E3Vishay IntertechnologiesMOSFET 30V 60A 125W 1.9mohm @ 10VAmericas -
        圖片 型號 描述
        SIE802DF-T1-E3

        Mfr.#: SIE802DF-T1-E3

        OMO.#: OMO-SIE802DF-T1-E3

        		 MOSFET 30V 60A 125W 1.9mohm @ 10V
        SIE802DF-T1-GE3

        Mfr.#: SIE802DF-T1-GE3

        OMO.#: OMO-SIE802DF-T1-GE3

        		 MOSFET 30V 202A 125W 1.9mohm @ 10V
        SIE802DF-T1-GE3

        Mfr.#: SIE802DF-T1-GE3

        OMO.#: OMO-SIE802DF-T1-GE3-VISHAY

        		 RF Bipolar Transistors MOSFET 30V 202A 125W 1.9mohm @ 10V
        SIE802DF-T1-E3

        Mfr.#: SIE802DF-T1-E3

        OMO.#: OMO-SIE802DF-T1-E3-VISHAY

        		 MOSFET N-CH 30V 60A 10-POLARPAK
        可用性
        庫存:
        Available
        訂購:
        2000
        輸入數量:
        SIE802DF-T1-E3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$2.64
        US$2.64
        10
        US$2.51
        US$25.08
        100
        US$2.38
        US$237.60
        500
        US$2.24
        US$1 122.00
        1000
        US$2.11
        US$2 112.00
        從...開始
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