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FDP3205

FDP3205
Mfr. #:
FDP3205
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 55V N-Channel PowerTrench
生命週期:
製造商新產品
數據表:
FDP3205 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
55 V
Id - 連續漏極電流：
100 A
Rds On - 漏源電阻：
7.5 mOhms
Vgs - 柵源電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
150 W
配置：
單身的
頻道模式：
增強
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
晶體管類型：
1 N-Channel
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
秋季時間：
18 ns
產品類別：
MOSFET
上升時間：
147 ns
出廠包裝數量：
50
子類別：
MOSFET
典型關斷延遲時間：
42 ns
典型的開啟延遲時間：
23 ns
單位重量：
0.090478 oz
Tags
FDP3, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 55V 100A 3-Pin(3+Tab) TO-220AB Rail
***Yang
MOSFET N-CH 55V 100A TO-220 - Bulk
***ark
RAIL / N-CH/55V 100A High Qg PT3
***ure Electronics
STP80N6F6: 60 V 5 mOhm 80 A N-Channel STripFET™ VI DeepGATE™ Power MOSFET-TO-220
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ineon SCT
55V, N-Ch, 6.6 mΩ max, Automotive MOSFET, TO-220, OptiMOS™, PG-TO220-3, RoHS
***et
Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***or
MOSFET N-CH 55V 80A TO220-3
***i-Key
N-CHANNEL POWER MOSFET
***et
Trans MOSFET N-CH
***eco
MOSFET Transistor N-Channel 60 V 95A (Tc) 125W (Tc) Through Hole TO-220
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 60 V 5.9 mOhm 75 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH 60V 95A 3-Pin(3+Tab) TO-220AB Tube
***et
MOSFET, 60V, 95A, 5.9 MOHM, 75 NC QG, TO-220AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***r Electronics
Power Field-Effect Transistor, 74A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
60V, 74A, 0.0061 ohms, TO-220F-3SG Power Mosfet
***ical
Trans MOSFET N-CH 60V 74A 3-Pin(3+Tab) TO-220FP Tube
***emi
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***icroelectronics
N-channel 60 V, 0.0057 Ohm typ., 90 A STripFET F6 Power MOSFET in a TO-220 package
***ure Electronics
Single N-Channel 60 V 136 W 74.9 nC Silicon Through Hole Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
型號 製造商 描述 庫存 價格
FDP3205
DISTI # FDP3205-ND		ON SemiconductorMOSFET N-CH 55V 100A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FDP3205
    DISTI # 512-FDP3205    		ON SemiconductorMOSFET 55V N-Channel PowerTrench
    RoHS: Compliant    		0
      FDP3205Fairchild Semiconductor CorporationPower Field-Effect Transistor, 100A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		2301
      • 1000:$1.0800
      • 500:$1.1400
      • 100:$1.1800
      • 25:$1.2300
      • 1:$1.3300
      圖片 型號 描述
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      Mfr.#: FDP20N50

      OMO.#: OMO-FDP20N50

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      FDPF33N25T

      Mfr.#: FDPF33N25T

      OMO.#: OMO-FDPF33N25T

      		 MOSFET TBD
      FDP2572

      Mfr.#: FDP2572

      OMO.#: OMO-FDP2572

      		 MOSFET TO-220 N-CH 150V 29A
      FDP8870

      Mfr.#: FDP8870

      OMO.#: OMO-FDP8870

      		 MOSFET 30V N-Channel PowerTrench
      FDP2552

      Mfr.#: FDP2552

      OMO.#: OMO-FDP2552-ON-SEMICONDUCTOR

      		 MOSFET N-CH 150V 37A TO-220AB
      FDP39N20

      Mfr.#: FDP39N20

      OMO.#: OMO-FDP39N20-ON-SEMICONDUCTOR

      		 MOSFET N-CH 200V 39A TO-220
      FDP5645

      Mfr.#: FDP5645

      OMO.#: OMO-FDP5645-ON-SEMICONDUCTOR

      		 MOSFET N-CH 60V 80A TO-220
      FDP8874

      Mfr.#: FDP8874

      OMO.#: OMO-FDP8874-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 114A TO-220AB
      FDPF5N50NZFT

      Mfr.#: FDPF5N50NZFT

      OMO.#: OMO-FDPF5N50NZFT-1190

      		 全新原裝
      FDP3632_Q

      Mfr.#: FDP3632_Q

      OMO.#: OMO-FDP3632-Q-1190

      		 MOSFET 100V 80a .9 Ohms/VGS=1V
      可用性
      庫存:
      Available
      訂購:
      1500
      輸入數量:
      FDP3205的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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