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FDP050AN06A0

FDP050AN06A0
Mfr. #:
FDP050AN06A0
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET N-Channel PowerTrench
生命週期:
製造商新產品
數據表:
FDP050AN06A0 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FDP050AN06A0 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
60 V
Id - 連續漏極電流：
80 A
Rds On - 漏源電阻：
5 mOhms
Vgs - 柵源電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
245 W
配置：
單身的
頻道模式：
增強
商品名：
動力戰壕
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
系列：
FDP050AN06A0
晶體管類型：
1 N-Channel
類型：
MOSFET
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
秋季時間：
29 ns
產品類別：
MOSFET
上升時間：
160 ns
出廠包裝數量：
800
子類別：
MOSFET
典型關斷延遲時間：
28 ns
典型的開啟延遲時間：
16 ns
第 # 部分別名：
FDP050AN06A0_NL
單位重量：
0.063493 oz
Tags
FDP050, FDP05, FDP0, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**r
    E**r
    RU

    It is not a real 2SK117.Drain current should not exceed 14mA (usually about 10mA), but the real measured values are more than a 20mA. So they are much more worse than a genuine.Refund received.

    2019-06-23
    Y***a
    Y***a
    RU

    Ok

    2019-06-05
***el Electronic
Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220; PowerTrench®
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***nell
MOSFET, N CH, 60V, 18A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
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Power Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:84A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 84 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
***ment14 APAC
MOSFET, N, 60V, 81A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:84A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:12mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon SCT
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***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ment14 APAC
MOSFET, N, 55V, 150A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:4.9ohm; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230W; Pulse Current Idm:600A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 150 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 4.9 / Gate-Source Voltage V = 20 / Fall Time ns = 82 / Rise Time ns = 110 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 230
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S
***ure Electronics
Single N-Channel 75 V 13 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 80V 82A 3-Pin(3+Tab) TO-220AB Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:82A; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 82 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 13 / Gate-Source Voltage V = 20 / Fall Time ns = 48 / Rise Time ns = 64 / Turn-OFF Delay Time ns = 49 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 230
***ment14 APAC
MOSFET, N, 75V, 82A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:75V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:82A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:13mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
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Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:85A; On Resistance, Rds(on):0.01ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:85A; Resistance, Rds On:0.01ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Alternate Case Style:SOT-78B; Current, Idm Pulse:300A; Device Marking:FQP85N06; No. of Pins:3; Power Dissipation:160W; Power, Pd:160W; Resistance, Rds on Max:0.01ohm; Voltage, Vds Max:60V; Voltage, Vgs th Max:4V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***emi
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N-Channel Power MOSFET 60V, 70A, 14mΩ
***r Electronics
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; Device Marking:RFP70N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:14mohm; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
型號 製造商 描述 庫存 價格
FDP050AN06A0
DISTI # 26637324		ON SemiconductorFET 60V 5.0 MOHM TO2201600
  • 800:$1.3840
FDP050AN06A0
DISTI # 24246661		ON SemiconductorFET 60V 5.0 MOHM TO2201167
  • 11:$0.9719
FDP050AN06A0
DISTI # FDP050AN06A0-ND		ON SemiconductorMOSFET N-CH 60V 80A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Bulk		1724In Stock
  • 1000:$1.2754
  • 500:$1.5393
  • 100:$1.8735
  • 10:$2.3310
  • 1:$2.5900
FDP050AN06A0
DISTI # V36:1790_06359183		ON SemiconductorFET 60V 5.0 MOHM TO2200
  • 800000:$1.0280
  • 400000:$1.0300
  • 80000:$1.1540
  • 8000:$1.3520
  • 800:$1.3840
FDP050AN06A0
DISTI # FDP050AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP050AN06A0)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 2625
  • 500:$0.9649
  • 250:$0.9899
  • 150:$1.0029
  • 100:$1.0159
  • 50:$1.0219
FDP050AN06A0
DISTI # FDP050AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP050AN06A0)
RoHS: Compliant
Min Qty: 1		Europe - 640
  • 1000:€0.9039
  • 500:€0.9379
  • 100:€0.9739
  • 50:€1.0129
  • 25:€1.0549
  • 10:€1.1509
  • 1:€1.2659
FDP050AN06A0
DISTI # FDP050AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP050AN06A0)
RoHS: Compliant
Min Qty: 256
Container: Bulk		Americas - 0
  • 256:$1.1900
  • 512:$1.1900
  • 768:$1.1900
  • 1280:$1.1900
  • 2560:$1.1900
FDP050AN06A0
DISTI # 31Y1384		ON SemiconductorMOSFET, N CH, 60V, 18A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes673
  • 1000:$1.1200
  • 500:$1.2800
  • 100:$1.4600
  • 10:$1.8400
  • 1:$2.1600
FDP050AN06A0
DISTI # 512-FDP050AN06A0		ON SemiconductorMOSFET N-Channel PowerTrench
RoHS: Compliant		1343
  • 1:$2.1400
  • 10:$1.8200
  • 100:$1.4500
  • 500:$1.2700
  • 1000:$1.0600
FDP050AN06A0_Q
DISTI # 512-FDP050AN06A0_Q		ON SemiconductorMOSFET N-Channel PowerTrench
RoHS: Not compliant		0
    FDP050AN06A0Fairchild Semiconductor CorporationPower Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		26791
    • 1000:$1.2900
    • 500:$1.3600
    • 100:$1.4100
    • 25:$1.4700
    • 1:$1.5900
    FDP050AN06A0Fairchild Semiconductor Corporation 30
      FDP050AN06A0
      DISTI # FDP050AN06A0      		ON SemiconductorTransistor: N-MOSFET,unipolar,60V,18A,245W,TO220AB26
      • 100:$2.1200
      • 25:$2.3500
      • 5:$2.9300
      • 1:$3.4000
      FDP050AN06A0Fairchild Semiconductor CorporationPower Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		800
        FDP050AN06A0
        DISTI # 2454156        		ON SemiconductorMOSFET, N CH, 60V, 18A, TO-220AB-3
        RoHS: Compliant        		673
        • 500:$1.9500
        • 100:$2.2400
        • 10:$2.8000
        • 1:$3.2900
        FDP050AN06A0
        DISTI # 2454156        		ON SemiconductorMOSFET, N CH, 60V, 18A, TO-220AB-3873
        • 500:£0.9800
        • 250:£1.0500
        • 100:£1.1200
        • 10:£1.4200
        • 1:£1.8700
        圖片 型號 描述
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        Mfr.#: TLV61046ADBVR

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        Mfr.#: DRV5032FADBZR

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        		 Board Mount Hall Effect / Magnetic Sensors Ultra-Low Power 1.65V to 5.5V Hall Effect Switch 3-SOT-23 -40 to 85
        784770330

        Mfr.#: 784770330

        OMO.#: OMO-784770330

        		 Fixed Inductors WE-PDA 1280 33uH 33uH 20% 3.4A 55mOhm
        TPS92611QDGNRQ1

        Mfr.#: TPS92611QDGNRQ1

        OMO.#: OMO-TPS92611QDGNRQ1-TEXAS-INSTRUMENTS

        		 Single Channel Linear LED Drive
        MC78M08CDTG

        Mfr.#: MC78M08CDTG

        OMO.#: OMO-MC78M08CDTG-ON-SEMICONDUCTOR

        		 Linear Voltage Regulators 8V 500mA Positive
        DRV5032FADBZR

        Mfr.#: DRV5032FADBZR

        OMO.#: OMO-DRV5032FADBZR-TEXAS-INSTRUMENTS

        		 LP HALL 32FADBZR
        可用性
        庫存:
        Available
        訂購:
        1984
        輸入數量:
        FDP050AN06A0的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$2.46
        US$2.46
        10
        US$2.09
        US$20.90
        100
        US$1.67
        US$167.00
        500
        US$1.46
        US$730.00
        1000
        US$1.21
        US$1 210.00
        2500
        US$1.20
        US$3 000.00
        由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
        從...開始
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