IRG4IBC20WPBF

IRG4IBC20WPBF
Mfr. #:
IRG4IBC20WPBF
製造商:
Infineon Technologies
描述:
IGBT Transistors 600V Warp 60-150kHz
生命週期:
製造商新產品
數據表:
IRG4IBC20WPBF 數據表
交貨:
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支付:
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HTML Datasheet:
IRG4IBC20WPBF DatasheetIRG4IBC20WPBF Datasheet (P4-P6)IRG4IBC20WPBF Datasheet (P7-P8)
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
IGBT晶體管
RoHS:
Y
技術:
包裝/案例:
TO-220FP-3
安裝方式:
通孔
配置:
單身的
集電極-發射極電壓 VCEO 最大值:
600 V
集電極-發射極飽和電壓:
2.16 V
最大柵極發射極電壓:
20 V
25 C 時的連續集電極電流:
12 A
Pd - 功耗:
34 W
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
打包:
管子
連續集電極電流 Ic 最大值:
12 A
高度:
9.1 mm
長度:
10.6 mm
寬度:
4.8 mm
品牌:
英飛凌科技
柵極-發射極漏電流:
100 nA
產品類別:
IGBT晶體管
出廠包裝數量:
2000
子類別:
IGBT
第 # 部分別名:
SP001537234
單位重量:
0.081130 oz
Tags
IRG4IBC20W, IRG4IBC2, IRG4IBC, IRG4IB, IRG4I, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220 Full-Pak
***ied Electronics & Automation
600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:11.8A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:34W; Package/Case:TO-220 ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 11.8A, TO-220FP; Transistor Type:IGBT; DC Collector Current:11.8A; Collector Emitter Voltage Vces:2.16V; Power Dissipation Pd:34W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:11.8A; Current Temperature:25°C; Device Marking:IRG4IBC20WPbF; Fall Time Typ:64ns; Fall Time tf:64ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Max:34W; Power Dissipation Pd:34W; Power Dissipation Pd:34W; Pulsed Current Icm:52A; Rise Time:14ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
型號 製造商 描述 庫存 價格
IRG4IBC20WPBF
DISTI # IRG4IBC20WPBF-ND
Infineon Technologies AGIGBT 600V 12A 34W TO220FP
RoHS: Compliant
Min Qty: 2000
Container: Tube
Limited Supply - Call
    IRG4IBC20WPBF
    DISTI # IRG4IBC20WPBF
    Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220 Full-Pak - Bulk (Alt: IRG4IBC20WPBF)
    Min Qty: 329
    Container: Bulk
    Americas - 0
    • 3290:$0.9659
    • 1645:$0.9849
    • 987:$1.0239
    • 658:$1.0639
    • 329:$1.1089
    IRG4IBC20WPBF
    DISTI # 70018444
    Infineon Technologies AG600V Warp 60-150 kHz Discrete IGBT IN A TO-220 FULLPAK Package
    RoHS: Compliant
    0
    • 350:$2.2300
    IRG4IBC20WPBF
    DISTI # 942-IRG4IBC20WPBF
    Infineon Technologies AGIGBT Transistors 600V Warp 60-150kHz
    RoHS: Compliant
    0
      IRG4IBC20WPBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 11.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
      RoHS: Compliant
      447
      • 1000:$1.0000
      • 500:$1.0500
      • 100:$1.1000
      • 25:$1.1400
      • 1:$1.2300
      IRG4IBC20WPBFInternational RectifierInsulated Gate Bipolar Transistor, 11.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
      RoHS: Compliant
      10
      • 1000:$1.0000
      • 500:$1.0500
      • 100:$1.1000
      • 25:$1.1400
      • 1:$1.2300
      IRG4IBC20WPBF
      DISTI # 8650454
      Infineon Technologies AGIGBT, 600V, 11.8A, TO-220FP
      RoHS: Compliant
      0
      • 1000:$1.7100
      • 500:$2.0500
      • 100:$2.3500
      • 10:$2.9200
      • 1:$3.4500
      圖片 型號 描述
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      Mfr.#: IRG4IBC30KDPBF

      OMO.#: OMO-IRG4IBC30KDPBF

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      IRG4IBC20FDPBF

      Mfr.#: IRG4IBC20FDPBF

      OMO.#: OMO-IRG4IBC20FDPBF

      IGBT Transistors 600V Fast 1-8kHz
      IRG4IBC20WPBF

      Mfr.#: IRG4IBC20WPBF

      OMO.#: OMO-IRG4IBC20WPBF

      IGBT Transistors 600V Warp 60-150kHz
      IRG4IBC20FDPBF

      Mfr.#: IRG4IBC20FDPBF

      OMO.#: OMO-IRG4IBC20FDPBF-INFINEON-TECHNOLOGIES

      IGBT 600V 14.3A 34W TO220FP
      IRG4IBC20KDPBF

      Mfr.#: IRG4IBC20KDPBF

      OMO.#: OMO-IRG4IBC20KDPBF-INFINEON-TECHNOLOGIES

      IGBT Transistors 600V UltraFast 8-25kHz
      IRG4IBC30WPBF

      Mfr.#: IRG4IBC30WPBF

      OMO.#: OMO-IRG4IBC30WPBF-INFINEON-TECHNOLOGIES

      IGBT Transistors 600V Warp 60-150kHz
      IRG4IBC10UDPBF

      Mfr.#: IRG4IBC10UDPBF

      OMO.#: OMO-IRG4IBC10UDPBF-INFINEON-TECHNOLOGIES

      IGBT Transistors 600V UltraFast 8-60kHz
      IRG4IBC10UD

      Mfr.#: IRG4IBC10UD

      OMO.#: OMO-IRG4IBC10UD-INFINEON-TECHNOLOGIES

      IGBT 600V 6.8A 25W TO220FP
      IRG4IBC30KDPBF.

      Mfr.#: IRG4IBC30KDPBF.

      OMO.#: OMO-IRG4IBC30KDPBF--1190

      DC Collector Current:17A, Collector Emitter Saturation Voltage Vce(on):2.88V, Power Dissipation Pd:45W, Collector Emitter Voltage V(br)ceo:600V, No. of Pins:3Pins, Operating Temperature Max:150°C
      IRG4IBC30WPBF.

      Mfr.#: IRG4IBC30WPBF.

      OMO.#: OMO-IRG4IBC30WPBF--1190

      全新原裝
      可用性
      庫存:
      Available
      訂購:
      1000
      輸入數量:
      IRG4IBC20WPBF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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