We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
型號 | 製造商 | 描述 | 庫存 | 價格 |
---|---|---|---|---|
MMSZ5263C-HE3-08 DISTI # MMSZ5263C-HE3-08-ND | Vishay Semiconductors | DIODE ZENER 56V 500MW SOD123 RoHS: Compliant Min Qty: 15000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
MMSZ5263C-HE3-08 DISTI # MMSZ5263C-HE3-08 | Vishay Intertechnologies | ZENER DIODE SOD123-HE3 - Tape and Reel (Alt: MMSZ5263C-HE3-08) RoHS: Compliant Min Qty: 15000 Container: Reel | Americas - 0 |
|
MMSZ5263C-HE3-08 DISTI # 78-MMSZ5263C-HE3-08 | Vishay Intertechnologies | Zener Diodes 56 Volt 0.5W 2% AUTO RoHS: Compliant | 13610 |
|
MMSZ5263C-HE3-18 DISTI # 78-MMSZ5263C-HE3-18 | Vishay Intertechnologies | Zener Diodes 56 Volt 0.5W 2% AUTO RoHS: Compliant | 0 |
|
MMSZ5263C-HE3-18 | Vishay Intertechnologies | Zener Diodes 56 Volt 0.5W 2% AUTO RoHS: Compliant | Americas - | |
MMSZ5263C-HE3-08 | Vishay Intertechnologies | Zener Diodes 56 Volt 0.5W 2% AUTO RoHS: Compliant | Americas - |
圖片 | 型號 | 描述 |
---|---|---|
Mfr.#: FDMA1032CZ OMO.#: OMO-FDMA1032CZ |
MOSFET 20V Complementary PowerTrench MOSFET | |
Mfr.#: TPS22810DBVR OMO.#: OMO-TPS22810DBVR |
Power Switch ICs - Power Distribution TPS22810 2.7-18-V 2A 79mOhm On-Resistanc | |
Mfr.#: LT8608EMSE#PBF OMO.#: OMO-LT8608EMSE-PBF |
Switching Voltage Regulators 42V/1.5A Peak Synchronous Step-Down Regulator with 2.5uA Quiescent Current | |
Mfr.#: STEF01FTR |
IC ELECTRONIC FUSE | |
Mfr.#: TPS22810DBVR |
IC PWR SWITCH N-CHAN 1:1 6SOT23 | |
Mfr.#: FDMA1032CZ |
MOSFET N/P-CH 20V MICROFET 2X2 | |
R: Any 1 Intensity bin from L - 3a4, RB G:Any 1 Intensity bin from A to C, Any consecutive 3nm withi |