SI4963BDY-T1-GE3

SI4963BDY-T1-GE3
Mfr. #:
SI4963BDY-T1-GE3
製造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V
生命週期:
製造商新產品
數據表:
SI4963BDY-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
SI4963BDY-T1-GE3 更多信息
產品屬性
屬性值
製造商
威世矽
產品分類
FET - 陣列
系列
-
打包
捲帶 (TR)
部分別名
SI4963BDY-GE3
單位重量
0.006596 oz
安裝方式
貼片/貼片
包裝盒
8-SOIC (0.154", 3.90mm Width)
技術
工作溫度
-55°C ~ 150°C (TJ)
安裝型
表面貼裝
通道數
2 Channel
供應商-設備-包
8-SO
配置
雙重的
FET型
2 P-Channel (Dual)
最大功率
1.1W
晶體管型
2 P-Channel
漏源電壓 Vdss
20V
輸入電容-Ciss-Vds
-
FET-Feature
邏輯電平門
Current-Continuous-Drain-Id-25°C
4.9A
Rds-On-Max-Id-Vgs
32 mOhm @ 6.5A, 4.5V
Vgs-th-Max-Id
1.4V @ 250μA
柵極電荷-Qg-Vgs
21nC @ 4.5V
鈀功耗
1.1 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
55 ns
上升時間
40 ns
VGS-柵極-源極-電壓
12 V
Id 連續漏極電流
4.9 A
Vds-漏-源-擊穿電壓
- 20 V
Rds-On-Drain-Source-Resistance
32 mOhms
晶體管極性
P-通道
典型關斷延遲時間
80 ns
典型開啟延遲時間
30 ns
通道模式
增強
Tags
SI4963, SI496, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
***i-Key
MOSFET 2P-CH 20V 4.9A 8SOIC
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型號 製造商 描述 庫存 價格
SI4963BDY-T1-GE3
DISTI # SI4963BDY-T1-GE3-ND
Vishay SiliconixMOSFET 2P-CH 20V 4.9A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.8167
SI4963BDY-T1-GE3
DISTI # SI4963BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4963BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.6379
  • 5000:$0.6189
  • 10000:$0.5939
  • 15000:$0.5779
  • 25000:$0.5619
SI4963BDY-T1-GE3
DISTI # 781-SI4963BDY-GE3
Vishay IntertechnologiesMOSFET 20V 6.5A 2.0W 32mohm @ 4.5V
RoHS: Compliant
0
  • 2500:$0.6150
  • 5000:$0.5840
  • 10000:$0.5620
圖片 型號 描述
SI4963BDY-T1-E3

Mfr.#: SI4963BDY-T1-E3

OMO.#: OMO-SI4963BDY-T1-E3

MOSFET 20V 6.2A 2W
SI4963BDY-T1-GE3

Mfr.#: SI4963BDY-T1-GE3

OMO.#: OMO-SI4963BDY-T1-GE3

MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V
SI4963BDY-T1-GE3

Mfr.#: SI4963BDY-T1-GE3

OMO.#: OMO-SI4963BDY-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V
SI4963BDY-T1-E3

Mfr.#: SI4963BDY-T1-E3

OMO.#: OMO-SI4963BDY-T1-E3-VISHAY

MOSFET 2P-CH 20V 4.9A 8-SOIC
可用性
庫存:
Available
訂購:
1500
輸入數量:
SI4963BDY-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.84
US$0.84
10
US$0.80
US$8.01
100
US$0.76
US$75.86
500
US$0.72
US$358.20
1000
US$0.67
US$674.30
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
從...開始
Top