STGW30H65FB

Mfr. #:: STGW30H65FB
製造商:: STMicroelectronics
描述:: IGBT Transistors IGBT & Power Bipola
生命週期:: 製造商新產品
數據表:: STGW30H65FB 數據表
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ECAD Model:
更多信息:: STGW30H65FB 更多信息 STGW30H65FB Product Details

產品屬性
屬性值

製造商: 意法半導體

產品分類: IGBT - 單

系列: 600-650V IGBTs

打包: 管子

單位重量: 1.340411 oz

安裝方式: 通孔

包裝盒: TO-247-3

輸入類型: 標準

安裝型: 通孔

供應商-設備-包: TO-247

配置: 單身的

最大功率: 260W

反向恢復時間trr: -

電流收集器 Ic-Max: 30A

電壓收集器發射極擊穿最大值: 650V

IGBT型: 海溝場停止

電流收集器脈衝Icm: 120A

Vce-on-Max-Vge-Ic: 2V @ 15V, 30A

開關能源: 151μJ (on), 293μJ (off)

柵極電荷: 149nC

Td-on-off-25°C: 37ns/146ns

測試條件: 400V, 30A, 10 Ohm, 15V

鈀功耗: 260 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

集電極-發射極-電壓-VCEO-Max: 650 V

集電極-發射極-飽和-電壓: 1.75 V

25-C 時的連續集電極電流: 30 A

柵極-發射極-漏電流: 250 nA

最大柵極發射極電壓: +/- 20 V

連續集電極電流 Ic-Max: 60 A

Tags: STGW30H, STGW30, STGW3, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW30H65FB 更多信息

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

型號	製造商	描述	庫存	價格
STGW30H65FB DISTI # V99:2348_17621591	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	480	2500:$1.6510 1000:$1.6740 500:$2.0030 250:$2.2620 100:$2.3340 10:$2.7460 1:$3.5497
STGW30H65FB DISTI # V36:1790_06560746	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
STGW30H65FB DISTI # 497-14467-5-ND	STMicroelectronics	IGBT 650V 30A 260W TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	46In Stock	2520:$1.7220 510:$2.1439 120:$2.5184 30:$2.9060 10:$3.0740 1:$3.4200
STGW30H65FB DISTI # 32021364	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	480	2500:$1.7748 1000:$1.7995 500:$2.1532 250:$2.4316 100:$2.5090 10:$2.9520 4:$3.4690
STGW30H65FB DISTI # STGW30H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube (Alt: STGW30H65FB) RoHS: Compliant Min Qty: 30 Container: Tube	Europe - 600	180:€1.5900 300:€1.5900 60:€1.6900 120:€1.6900 30:€1.7900
STGW30H65FB DISTI # STGW30H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW30H65FB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$1.4900 2400:$1.5900 3600:$1.5900 1200:$1.6900 600:$1.7900
STGW30H65FB DISTI # 55X3476	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$1.6000 250:$1.6500 100:$1.9700 50:$2.2800 25:$2.4300 10:$2.7700 1:$3.2000
STGW30H65FB DISTI # 511-STGW30H65FB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed RoHS: Compliant	249	1:$3.2500 10:$2.7600 100:$2.3900 250:$2.2700 500:$2.0400 1000:$1.7200 2500:$1.6300 5000:$1.5700
STGW30H65FB	STMicroelectronics		14499
STGW30H65FB DISTI # XSKDRABV0027577	STMicroelectronics	RoHS: Compliant	480 in Stock0 on Order	480:$2.7360 300:$2.9280
STGW30H65FB	STMicroelectronics	Insulated Gate Bipolar Transistor RoHS: Compliant	Europe - 600
STGW30H65FB DISTI # IGBT1561	STMicroelectronics	IGBT 650V 30A 1,55VTO247-3	Stock DE - 0Stock HK - 0Stock US - 0	600:$1.8200

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