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SI3588DV-T1-E3

SI3588DV-T1-E3
Mfr. #:
SI3588DV-T1-E3
製造商:
Vishay
描述:
IGBT Transistors MOSFET 20V 3.0/2.2A
生命週期:
製造商新產品
數據表:
SI3588DV-T1-E3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3588DV-T1-E3 DatasheetSI3588DV-T1-E3 Datasheet (P4-P6)SI3588DV-T1-E3 Datasheet (P7-P8)
ECAD Model:
產品屬性
屬性值
製造商
威世矽
產品分類
FET - 陣列
系列
溝槽FETR
打包
數碼捲軸
部分別名
SI3588DV-E3
單位重量
0.000705 oz
安裝方式
貼片/貼片
商品名
溝槽場效應晶體管
包裝盒
SOT-23-6 Thin, TSOT-23-6
技術
矽
工作溫度
-55°C ~ 150°C (TJ)
安裝型
表面貼裝
通道數
2 Channel
供應商-設備-包
6-TSOP
配置
1 N-Channel 1 P-Channel
FET型
N 和 P 溝道
最大功率
830mW, 83mW
晶體管型
1 N-Channel 1 P-Channel
漏源電壓 Vdss
20V
輸入電容-Ciss-Vds
-
FET-Feature
邏輯電平門
Current-Continuous-Drain-Id-25°C
2.5A, 570mA
Rds-On-Max-Id-Vgs
80 mOhm @ 3A, 4.5V
Vgs-th-Max-Id
450mV @ 250μA (Min)
柵極電荷-Qg-Vgs
7.5nC @ 4.5V
鈀功耗
830 mW
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
30 ns 29 ns
上升時間
30 ns 29 ns
VGS-柵極-源極-電壓
8 V
Id 連續漏極電流
2.5 A
Vds-漏-源-擊穿電壓
20 V
Rds-On-Drain-Source-Resistance
80 mOhms 145 mOhms
晶體管極性
N 溝道 P 溝道
典型關斷延遲時間
28 ns 24 ns
典型開啟延遲時間
12 ns 12 ns
通道模式
增強
Tags
SI3588D, SI3588, SI358, SI35, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N/P-CH 20V 2.5A/0.57A 6-Pin TSOP T/R
***i-Key
MOSFET N/P-CH 20V 2.5A 6TSOP
***ser
Dual MOSFETs 20V 3.0/2.2A
***nell
MOSFET, P, TSOP-6; Transistor Type:MOSFET; Transistor Polarity:Dual N / P Channel; Voltage, Vds Typ:20V; Current, Id Cont:3A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:4.5V; Case Style:TSOP-6
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:3A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:TSOP-6 ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P, TSOP-6; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:450mV; Power Dissipation Pd:830mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; Continuous Drain Current Id:3A; Current Id Max:3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):80mohm; Package / Case:TSOP-6; Power Dissipation Pd:830mW; Voltage Vds Typ:20V; Voltage Vgs Max:450mV; Voltage Vgs Rds on Measurement:4.5V
型號 製造商 描述 庫存 價格
SI3588DV-T1-E3
DISTI # SI3588DV-T1-E3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V 2.5A 6TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI3588DV-T1-E3
    DISTI # SI3588DV-T1-E3CT-ND    		Vishay SiliconixMOSFET N/P-CH 20V 2.5A 6TSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI3588DV-T1-E3
      DISTI # SI3588DV-T1-E3DKR-ND      		Vishay SiliconixMOSFET N/P-CH 20V 2.5A 6TSOP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI3588DV-T1-E3
        DISTI # 781-SI3588DV-E3        		Vishay IntertechnologiesMOSFET 20V 3.0/2.2A
        RoHS: Compliant        		0
          SI3588DV-T1-E3
          DISTI # 1612643RL          		Vishay IntertechnologiesMOSFET, P, TSOP-6
          RoHS: Compliant          		0
          • 1:$2.1600
          • 10:$1.7400
          • 100:$1.3900
          • 250:$1.2000
          • 500:$1.0400
          • 1000:$0.9660
          • 3000:$0.9320
          SI3588DV-T1-E3
          DISTI # 1612643          		Vishay IntertechnologiesMOSFET, P, TSOP-6
          RoHS: Compliant          		0
          • 1:$2.1600
          • 10:$1.7400
          • 100:$1.3900
          • 250:$1.2000
          • 500:$1.0400
          • 1000:$0.9660
          • 3000:$0.9320
          圖片 型號 描述
          SI3588DV-T1-GE3

          Mfr.#: SI3588DV-T1-GE3

          OMO.#: OMO-SI3588DV-T1-GE3

          		 MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3
          SI3588DV-T1-E3

          Mfr.#: SI3588DV-T1-E3

          OMO.#: OMO-SI3588DV-T1-E3-VISHAY

          		 IGBT Transistors MOSFET 20V 3.0/2.2A
          SI3588DV-T1-GE3

          Mfr.#: SI3588DV-T1-GE3

          OMO.#: OMO-SI3588DV-T1-GE3-VISHAY

          		 MOSFET N/P-CH 20V 2.5A 6-TSOP
          SI3588DV-T1E3

          Mfr.#: SI3588DV-T1E3

          OMO.#: OMO-SI3588DV-T1E3-1190

          		 全新原裝
          可用性
          庫存:
          Available
          訂購:
          4000
          輸入數量:
          SI3588DV-T1-E3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
          參考價格（美元）
          數量
          單價
          小計金額
          1
          US$0.00
          US$0.00
          10
          US$0.00
          US$0.00
          100
          US$0.00
          US$0.00
          500
          US$0.00
          US$0.00
          1000
          US$0.00
          US$0.00
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