RJH60F5DPQ-A0#T0

Mfr. #:: RJH60F5DPQ-A0#T0
製造商:: Renesas Electronics
描述:: IGBT Transistors IGBT
生命週期:: 製造商新產品
數據表:: RJH60F5DPQ-A0#T0 數據表
交貨:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: RJH60F5DPQ-A0#T0 Datasheet RJH60F5DPQ-A0#T0 Datasheet (P4-P6)RJH60F5DPQ-A0#T0 Datasheet (P7-P8)
ECAD Model:

產品屬性
屬性值

製造商：: 瑞薩電子

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

打包：: 管子

品牌：: 瑞薩電子

濕氣敏感：: 是的

產品類別：: IGBT晶體管

出廠包裝數量：: 1

子類別：: IGBT

Tags: RJH60F5DPQ-A0, RJH60F5DPQ-A, RJH60F5DPQ, RJH60F5D, RJH60F5, RJH60F, RJH60, RJH6, RJH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RJH60F5DPQ-A0#T0 描述

***p One Stop: Trans IGBT Chip N-CH 600V 80A 260400mW 3-Pin(3+Tab) TO-247A

***i-Key: IGBT 600V 80A 260.4W TO247A

***nell: IGBT, HIGH SPEED, 600V, 80A, TO-247A; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 260.4W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o

*** Electronic Components: IGBT Transistors IGBT

***S: new, original packaged

***ical: Trans IGBT Chip N-CH 600V 60A 235800mW 3-Pin(3+Tab) TO-247A Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247

***ark: Igbt, High Speed, 600V, 60A, To-247A

***nell: IGBT, HIGH SPEED, 600V, 60A, TO-247A; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 235.8W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o

***ical: Trans IGBT Chip N-CH 600V 80A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB

*** Electronic Components: IGBT Transistors 600V, 40A FIELD STOP IGBT

***rchild Semiconductor: Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.

***ical: Trans IGBT Chip N-CH 600V 90A 328900mW 3-Pin(3+Tab) TO-247A

***i-Key: IGBT 600V 90A 328.9W TO247A

*** Electronic Components: IGBT Transistors IGBT

***S: new, original packaged

***ment14 APAC: IGBT, HIGH SPEED, 600V, 90A, TO-247A; Transistor Type:IGBT; DC Collector Current:90A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:328.9W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 2A - 4 weeks; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-

***ca Corp: Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB

***ow.cn: Trans IGBT Chip N-CH 600V 80A 290000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***ark: 600V, 40A, 2.3V, To-247High Speed, Field Stop Igbt / Tube

*** Electronic Components: IGBT Transistors N-Ch 40A 600V FS IGBT

***i-Key: IGBT FIELD STOP 600V 80A TO247-3

***ernational Rectifier: 600V UltraFast Copack Trench IGBT in a TO-247AC package for apliance motion applications

***p One Stop: Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRGP4063DPbF Series 600 V 48 A N-Channel UltraFast IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.14 V Current release time: 35 ns Power dissipation: 330 W

***ark: Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:600V; Continuous Collector Current, Ic:96A; Collector Emitter Saturation Voltage, Vce(sat):2.14V; Power Dissipation, Pd:330W ;RoHS Compliant: Yes

***ical: Trans IGBT Chip N-CH 600V 100A 330000mW 3-Pin(3+Tab) TO-247AD Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD

***ineon SCT: 600 V, 60 A IGBT in TO-247 package, TO247COPAK-3, RoHS

***(Formerly Allied Electronics): IGBT N-Ch 600V 100A Ultrafast TO247AC

*** Electronic Components: IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC

***ineon: Target Applications: AC-DC; Pump; Solar; UPS; Welding

***ark: IGBT, MODULE, 600V, 100A, TO-247AC-3

***i-Key Marketplace: IRGP4660 - DISCRETE IGBT WITH AN

***nell: IGBT, SINGLE, 600V, 100A, TO-247AC; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 330W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of

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