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SIRA28BDP-T1-GE3

SIRA28BDP-T1-GE3
Mfr. #:
SIRA28BDP-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 30V Vds; 20/-16V Vgs PowerPAK SO-8
生命週期:
製造商新產品
數據表:
SIRA28BDP-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
SIRA28BDP-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAK-SO-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
38 A
Rds On - 漏源電阻：
7.5 mOhms
Vgs th - 柵源閾值電壓：
1.2 V
Vgs - 柵源電壓：
- 16 V, 20 V
Qg - 門電荷：
14 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
17 W
配置：
單身的
頻道模式：
增強
商品名：
溝槽場效應管；電源包
打包：
捲軸
晶體管類型：
1 N-Channel
品牌：
威世 / Siliconix
正向跨導 - 最小值：
35 S
秋季時間：
5 ns
產品類別：
MOSFET
上升時間：
5 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
17 ns
典型的開啟延遲時間：
10 ns
Tags
SIRA2, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
型號 製造商 描述 庫存 價格
SIRA28BDP-T1-GE3
DISTI # V72:2272_22989544		Vishay IntertechnologiesSIRA28BDP-T1-GE36000
  • 75000:$0.1655
  • 30000:$0.1675
  • 15000:$0.1694
  • 6000:$0.1713
  • 3000:$0.1733
  • 1000:$0.1890
  • 500:$0.2110
  • 250:$0.2344
  • 100:$0.2604
  • 50:$0.2894
  • 25:$0.3536
  • 10:$0.3929
  • 1:$0.5902
SIRA28BDP-T1-GE3
DISTI # SIRA28BDP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V POWERPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6040In Stock
  • 1000:$0.2289
  • 500:$0.2962
  • 100:$0.3770
  • 10:$0.5050
  • 1:$0.5900
SIRA28BDP-T1-GE3
DISTI # SIRA28BDP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V POWERPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6040In Stock
  • 1000:$0.2289
  • 500:$0.2962
  • 100:$0.3770
  • 10:$0.5050
  • 1:$0.5900
SIRA28BDP-T1-GE3
DISTI # SIRA28BDP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V POWERPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 30000:$0.1673
  • 15000:$0.1765
  • 6000:$0.1895
  • 3000:$0.2026
SIRA28BDP-T1-GE3
DISTI # 32441727		Vishay IntertechnologiesSIRA28BDP-T1-GE36000
  • 30000:$0.1675
  • 15000:$0.1694
  • 6000:$0.1713
  • 3000:$0.1733
  • 1000:$0.1890
  • 500:$0.2110
  • 250:$0.2344
  • 100:$0.2604
  • 50:$0.2894
  • 41:$0.3536
SIRA28BDP-T1-GE3
DISTI # SIRA28BDP-T1-GE3		Vishay IntertechnologiesTransistor MOSFET N-CH 30V 38A 8-Pin PowerPAK SO (Alt: SIRA28BDP-T1-GE3)
RoHS: Compliant
Min Qty: 6000		Asia - 0
    SIRA28BDP-T1-GE3
    DISTI # SIRA28BDP-T1-GE3    		Vishay IntertechnologiesTransistor MOSFET N-CH 30V 38A 8-Pin PowerPAK SO (Alt: SIRA28BDP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000    		Europe - 0
    • 30000:€0.1729
    • 18000:€0.1859
    • 12000:€0.2009
    • 6000:€0.2339
    • 3000:€0.3429
    SIRA28BDP-T1-GE3
    DISTI # 02AH2520    		Vishay IntertechnologiesMOSFET, N-CH, 38A, 30V, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:38A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0061ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,Power RoHS Compliant: Yes40
    • 1000:$0.2140
    • 500:$0.2770
    • 250:$0.3070
    • 100:$0.3370
    • 50:$0.3760
    • 25:$0.4150
    • 10:$0.4550
    • 1:$0.5860
    SIRA28BDP-T1-GE3
    DISTI # 78-SIRA28BDP-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds,20/-16V Vgs PowerPAK SO-8
    RoHS: Compliant    		5890
    • 1:$0.5800
    • 10:$0.4500
    • 100:$0.3340
    • 500:$0.2740
    • 1000:$0.2120
    • 3000:$0.1930
    • 6000:$0.1810
    • 9000:$0.1690
    • 24000:$0.1600
    SIRA28BDP-T1-GE3
    DISTI # 3019117    		Vishay IntertechnologiesMOSFET, N-CH, 38A, 30V, POWERPAK SO
    RoHS: Compliant    		40
    • 1000:$0.2940
    • 500:$0.3920
    • 250:$0.4470
    • 100:$0.4940
    • 25:$0.7650
    • 5:$0.8930
    SIRA28BDP-T1-GE3
    DISTI # 3019117    		Vishay IntertechnologiesMOSFET, N-CH, 38A, 30V, POWERPAK SO40
    • 500:£0.2050
    • 250:£0.2280
    • 100:£0.2500
    • 25:£0.3570
    • 5:£0.3810
    圖片 型號 描述
    SIRA28BDP-T1-GE3

    Mfr.#: SIRA28BDP-T1-GE3

    OMO.#: OMO-SIRA28BDP-T1-GE3

    		 MOSFET 30V Vds; 20/-16V Vgs PowerPAK SO-8
    SIRA28BDP-T1-GE3

    Mfr.#: SIRA28BDP-T1-GE3

    OMO.#: OMO-SIRA28BDP-T1-GE3-VISHAY

    		 MOSFET N-CH 30V POWERPAK SO-8
    可用性
    庫存:
    Available
    訂購:
    1988
    輸入數量:
    SIRA28BDP-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.58
    US$0.58
    10
    US$0.45
    US$4.50
    100
    US$0.33
    US$33.40
    500
    US$0.27
    US$137.00
    1000
    US$0.21
    US$212.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
    從...開始
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