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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IPP114N12N3GXKSA1 DISTI # IPP114N12N3GXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 120V 75A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube | 328In Stock |
|
| IPP114N12N3GXKSA1 DISTI # IPP114N12N3GXKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP114N12N3GXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
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| IPP114N12N3GXKSA1 DISTI # SP000652740 | Infineon Technologies AG | Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220 (Alt: SP000652740) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| IPP114N12N3GXKSA1 DISTI # 12AC9727 | Infineon Technologies AG | MOSFET, N-CH, 120V, 75A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0098ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes | 371 |
|
| IPP114N12N3 G DISTI # 726-IPP114N12N3G | Infineon Technologies AG | MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3 RoHS: Compliant | 121 |
|
| IPP114N12N3G | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 100V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 363 |
|
| IPP114N12N3GXKSA1 DISTI # 8922179P | Infineon Technologies AG | MOSFET N-CHANNEL 100V 75A OPTIMOS TO220, TU | 405 |
|
| IPP114N12N3GXKSA1 DISTI # IPP114N12N3GXKSA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,120V,300A,136W,PG-TO220-3 | 112 |
|
| IPP114N12N3GXKSA1 DISTI # 2709956 | Infineon Technologies AG | MOSFET, N-CH, 120V, 75A, TO-220 RoHS: Compliant | 371 |
|
| IPP114N12N3GXKSA1 DISTI # 2709956 | Infineon Technologies AG | MOSFET, N-CH, 120V, 75A, TO-220 RoHS: Compliant | 371 |
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| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: IPP114N03L G OMO.#: OMO-IPP114N03L-G |
MOSFET N-Ch 30V 30A TO220-3 OptiMOS 3 |
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Mfr.#: IPP114N12N3GXKSA1 |
MOSFET N-CH 120V 75A TO220-3 |
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Mfr.#: IPP114N03L G |
MOSFET N-CH 30V 30A TO-220-3 |
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Mfr.#: IPP114N03LG OMO.#: OMO-IPP114N03LG-1190 |
Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: IPP114N12N OMO.#: OMO-IPP114N12N-1190 |
全新原裝 |
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Mfr.#: IPP114N12N3 OMO.#: OMO-IPP114N12N3-1190 |
全新原裝 |
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Mfr.#: IPP114N12N3 G(SP00065274 |
全新原裝 |
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Mfr.#: IPP114N12N3G OMO.#: OMO-IPP114N12N3G-1190 |
Power Field-Effect Transistor, 75A I(D), 100V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: IPP114N12N3G,114N12N |
全新原裝 |
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Mfr.#: IPP114N12N3 G OMO.#: OMO-IPP114N12N3-G-124 |
Darlington Transistors MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3 |
