OMO ElectronicOMO Electronic
Expand menu
0 購物車

STP10N60M2

STP10N60M2
Mfr. #:
STP10N60M2
製造商:
STMicroelectronics
描述:
MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2
生命週期:
製造商新產品
數據表:
STP10N60M2 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STP10N60M2 更多信息 STP10N60M2 Product Details
產品屬性
屬性值
製造商：
意法半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
7.5 A
Rds On - 漏源電阻：
560 mOhms
Vgs th - 柵源閾值電壓：
3 V
Vgs - 柵源電壓：
25 V
Qg - 門電荷：
13.5 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
85 W
配置：
單身的
商品名：
網狀網
打包：
管子
系列：
STP10N60M2
晶體管類型：
1 N-Channel
品牌：
意法半導體
秋季時間：
13.2 ns
產品類別：
MOSFET
上升時間：
8 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
32.5 ns
典型的開啟延遲時間：
8.8 ns
單位重量：
0.011640 oz
Tags
STP10N60, STP10N6, STP10N, STP10, STP1, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 600 V 85 W 0.6 Ohm Flange Mount Power MosFet - TO-220-3
***(Formerly Allied Electronics)
MOSFET N-Ch 600V 7.5A MDmesh II TO-220
***ark
MOSFET, N-CH, 600V, 7.5A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 7.5A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 600V, 7.5A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 600 V 600 mOhm Flange Mount MDmesh II Plus Power Mosfet -TO-220FP
***ical
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N-CH, 600V, 7.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***ineon SCT
Single N-Channel 600 V 460 mOhm 28 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
***ical
Trans MOSFET N-CH 600V 13.1A 3-Pin(3+Tab) TO-220FP Tube
***ark
Mosfet, N-Ch, 600V, 13.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13.1A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***icroelectronics
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
***ure Electronics
N-Channel 600 V 600 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 600V, 7.5A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***icroelectronics
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 650 V 0.78 Ohm Flange Mount Mdmesh II Plus Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) TO-220FP Tube
***et
CoolMOS E6 Power Transistor N-Channel 600V 9.2A 3-Pin TO-220FP
***el Electronic
Trans MOSFET N-CH 650V 9.2A 3-Pin(3+Tab) TO-220 Full-Pack
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ineon SCT
Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
***ow.cn
Trans MOSFET N-CH 600V 9.9A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N-CH, 600V, 9.9A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
型號 製造商 描述 庫存 價格
STP10N60M2
DISTI # C1S730200794505		STMicroelectronicsTrans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		20
  • 1:$0.6960
STP10N60M2
DISTI # 497-13970-5-ND		STMicroelectronicsMOSFET N-CH 600V TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		1999In Stock
  • 5000:$0.6773
  • 2500:$0.7129
  • 500:$0.9676
  • 100:$1.1713
  • 50:$1.4260
  • 10:$1.5020
  • 1:$1.6800
STP10N60M2
DISTI # V36:1790_06564793		STMicroelectronicsTrans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 2000000:$0.5650
  • 1000000:$0.5655
  • 200000:$0.6411
  • 20000:$0.7990
  • 2000:$0.8268
STP10N60M2
DISTI # STP10N60M2		STMicroelectronicsTrans MOSFET N-CH 600V 7.5A 3-Pin TO-220 Tube (Alt: STP10N60M2)
RoHS: Compliant
Min Qty: 50
Container: Tube		Europe - 535
  • 500:€0.6309
  • 300:€0.6789
  • 200:€0.7359
  • 100:€0.8029
  • 50:€0.9819
STP10N60M2
DISTI # STP10N60M2		STMicroelectronicsTrans MOSFET N-CH 600V 7.5A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP10N60M2)
RoHS: Compliant
Min Qty: 2000
Container: Tube		Americas - 0
  • 20000:$0.6189
  • 10000:$0.6319
  • 6000:$0.6609
  • 4000:$0.6919
  • 2000:$0.7269
STP10N60M2
DISTI # 45AC7683		STMicroelectronicsMOSFET, N-CH, 600V, 7.5A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:7.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.55ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes250
  • 10000:$0.6270
  • 2500:$0.6520
  • 1000:$0.7350
  • 500:$0.9310
  • 100:$1.0500
  • 10:$1.3600
  • 1:$1.6100
STP10N60M2
DISTI # 511-STP10N60M2		STMicroelectronicsMOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2
RoHS: Compliant		1995
  • 1:$1.5900
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.9220
  • 1000:$0.7280
  • 2000:$0.6460
  • 10000:$0.6210
STP10N60M2
DISTI # 7863763P		STMicroelectronicsMOSFET N-CH 600V 7.5A MDMESH II TO-220, TU1110
  • 1000:£0.6560
  • 500:£0.8300
  • 250:£0.9440
  • 50:£1.2160
STP10N60M2
DISTI # 2807275		STMicroelectronicsMOSFET, N-CH, 600V, 7.5A, TO-220AB
RoHS: Compliant		750
  • 5000:$1.0300
  • 2500:$1.0800
  • 500:$1.4600
  • 100:$1.7700
  • 50:$2.1500
  • 5:$2.2700
STP10N60M2
DISTI # 2807275		STMicroelectronicsMOSFET, N-CH, 600V, 7.5A, TO-220AB749
  • 500:£0.6680
  • 250:£0.7110
  • 100:£0.7530
  • 10:£1.0300
  • 1:£1.3100
STP10N60M2
DISTI # STP10N60M2		STMicroelectronicsN-Ch+Z-Dio 600V 7,5A 85W 0,6R TO220
RoHS: Compliant		180
  • 10:€1.0800
  • 50:€0.7800
  • 200:€0.6300
  • 500:€0.6100
圖片 型號 描述
OPA2340UA

Mfr.#: OPA2340UA

OMO.#: OMO-OPA2340UA

 Operational Amplifiers - Op Amps Single-Supply Rail-to-Rail
NE555DR

Mfr.#: NE555DR

OMO.#: OMO-NE555DR

 Timers & Support Products Precision
IR2110PBF

Mfr.#: IR2110PBF

OMO.#: OMO-IR2110PBF

 Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
LM431BIMX/NOPB

Mfr.#: LM431BIMX/NOPB

OMO.#: OMO-LM431BIMX-NOPB

 Voltage References Adj Prec Zener Shunt Reg
CD4093BM96

Mfr.#: CD4093BM96

OMO.#: OMO-CD4093BM96

 Logic Gates CMOS Quad 2-Input NAND Schmitt Triggrs
UA78L05ACD

Mfr.#: UA78L05ACD

OMO.#: OMO-UA78L05ACD

 Linear Voltage Regulators 5.0V 100mA
L7815CV

Mfr.#: L7815CV

OMO.#: OMO-L7815CV

 Linear Voltage Regulators 15V 1.0A Positive
UC3842BDR2G

Mfr.#: UC3842BDR2G

OMO.#: OMO-UC3842BDR2G

 Switching Controllers 52kHz 1A Current PWM w/96% Duty Cycle Max
IR2110PBF

Mfr.#: IR2110PBF

OMO.#: OMO-IR2110PBF-INFINEON-TECHNOLOGIES

 Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
OPA2340UA

Mfr.#: OPA2340UA

OMO.#: OMO-OPA2340UA-TEXAS-INSTRUMENTS

 IC OP AMP GP 5.5MHZ RRIO 8SOIC
可用性
庫存:
Available
訂購:
1984
輸入數量:
STP10N60M2的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.59
US$1.59
10
US$1.35
US$13.50
100
US$1.04
US$104.00
500
US$0.92
US$461.00
1000
US$0.73
US$728.00
2000
US$0.65
US$1 292.00
10000
US$0.62
US$6 210.00
從...開始
最新產品
More Newest Products
Top