IHW30N90T

Mfr. #:: IHW30N90T
製造商:: Rochester Electronics, LLC
描述:: IGBT Transistors LOW LOSS DuoPack 900V 30A
生命週期:: 製造商新產品
數據表:: IHW30N90T 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商

產品分類: IGBT - 單

系列: IHW30N90

打包: 管子

部分別名: IHW30N90TFKSA1 IHW30N90TXK SP000076322

單位重量: 1.340411 oz

安裝方式: 通孔

包裝盒: TO-247-3

配置: 單身的

鈀功耗: 428 W

最高工作溫度: + 150 C

最低工作溫度: - 40 C

集電極-發射極-電壓-VCEO-Max: 900 V

集電極-發射極-飽和-電壓: 1.5 V

25-C 時的連續集電極電流: 30 A

最大柵極發射極電壓: +/- 20 V

連續集電極電流 Ic-Max: 30 A

Tags: IHW30N90T, IHW30N9, IHW30N, IHW3, IHW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IHW30N90T 描述

***p One Stop Japan: Trans IGBT Chip N-CH 900V 30A 428000mW 3-Pin(3+Tab) TO-247 Tube

***ronik: IGBT 900V 30A 1.5V TO247-3

***ment14 APAC: IGBT+ DIODE,900V,30A,TO247

***i-Key: IGBT, 60A, 900V, N-CHANNEL

***el Electronic: IGBT 900V 60A 428W TO247-3

***nell: IGBT+ DIODE,900V,30A,TO247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 428W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -40°C; Operating Temperature Range: -40°C to +175°C; Power Dissipation Max: 428W; Transistor Type: IGBT

Market price

型號	製造商	描述	庫存	價格
IHW30N90T DISTI # 30602191	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 30A 3-Pin(3+Tab) TO-247 RoHS: Compliant	9	5:$5.2020
IHW30N90TFKSA1 DISTI # IHW30N90TFKSA1-ND	Infineon Technologies AG	IGBT 900V 60A 428W TO247-3 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
IHW30N90T DISTI # IHW30N90T	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 30A 3-Pin TO-247 Tube - Bulk (Alt: IHW30N90T) RoHS: Not Compliant Min Qty: 125 Container: Bulk	Americas - 0	625:$2.4900 1250:$2.4900 375:$2.5900 250:$2.6900 125:$2.7900
IHW30N90T DISTI # SP000076322	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 30A 3-Pin TO-247 Tube (Alt: SP000076322) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€2.2900 100:€2.3900 500:€2.3900 50:€2.4900 10:€2.5900 25:€2.5900 1:€2.6900
IHW30N90T DISTI # 726-IHW30N90T	Infineon Technologies AG	IGBT Transistors LOW LOSS DuoPack 900V 30A RoHS: Compliant	1	1:$5.6000 10:$4.5000 25:$4.4200 100:$4.1000 250:$3.7000 500:$3.3000
IHW30N90T	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel, TO-247AD RoHS: Compliant	6670	1000:$2.6300 500:$2.7700 100:$2.8800 25:$3.0100 1:$3.2400
IHW30N90TFKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel, TO-247AD RoHS: Compliant	80	1000:$2.6300 500:$2.7700 100:$2.8800 25:$3.0100 1:$3.2400
IHW30N90T DISTI # 1832367	Infineon Technologies AG	IGBT+ DIODE,900V,30A,TO247 RoHS: Compliant	152	1:$3.4300

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