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IRFB31N20DPBF

IRFB31N20DPBF
Mfr. #:
IRFB31N20DPBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT 200V 31A 82mOhm 70nC
生命週期:
製造商新產品
數據表:
IRFB31N20DPBF 數據表
交貨:
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HTML Datasheet:
IRFB31N20DPBF DatasheetIRFB31N20DPBF Datasheet (P4-P6)IRFB31N20DPBF Datasheet (P7-P9)IRFB31N20DPBF Datasheet (P10-P12)
ECAD Model:
更多信息:
IRFB31N20DPBF 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
200 V
Id - 連續漏極電流：
31 A
Rds On - 漏源電阻：
82 mOhms
Vgs th - 柵源閾值電壓：
5.5 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
70 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
200 W
配置：
單身的
頻道模式：
增強
打包：
管子
高度：
15.65 mm
長度：
10 mm
晶體管類型：
1 N-Channel
寬度：
4.4 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
17 S
秋季時間：
10 ns
產品類別：
MOSFET
上升時間：
38 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
26 ns
典型的開啟延遲時間：
16 ns
第 # 部分別名：
SP001560192
單位重量：
0.211644 oz
Tags
IRFB31N20D, IRFB31, IRFB3, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V
***ure Electronics
Single N-Channel 200 V 0.082 Ohm 107 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 200V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:124A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
*** Source Electronics
MOSFET N-CH 200V 24A TO-220AB / Trans MOSFET N-CH 200V 24A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 200 V 100 mOhm 57 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 1200pF 1000volt U2J +/-5%
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
N-Channel Power MOSFET, UniFETTM, 200V, 39A, 66mΩ, TO-220F
***ure Electronics
FDPF39N20 Series 200 V 39 A 66 mOhm N-Ch UniFet Mosfet - TO-220-3FP
***Yang
Trans MOSFET N-CH 200V 39A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***enic
200V 39A 37W 66m´Î@10V19.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 39A I(D), 200V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:200V; On Resistance Rds(on):66mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:39A; Package / Case:TO-220F; Power Dissipation Pd:37W; Pulse Current Idm:156A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220
***Yang
Trans MOSFET N-CH 250V 33A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
N-Channel 250 V 94 mOhm Flange Mount Mosfet - TO-220
*** Stop Electro
Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.094ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:250V; On Resistance Rds(on):94mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:235W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:1640pF; Current Id Max:33A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.53°C/W; On State Resistance Max:94mohm; On State Resistance Typ:77mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:235W; Power Dissipation Pd:235W; Pulse Current Idm:132A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
*** Source Electronics
Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB
***ineon SCT
200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 200 V 72.5 mOhm 25 nC HEXFET® Power Mosfet - TO-220-3
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, CLASS D, 200V, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:TO-220AB; Power Dissipation Pd:144W; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***ure Electronics
Single N-Channel 150 V 56 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
N CH MOSFET, 150V, 33A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:56ohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:130A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220
***ure Electronics
Single N-Channel 200 V 0.075 Ohm 78 nC 180 W DMOS Flange Mount Mosfet - TO-220-3
***et Europe
Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail
***r Electronics
Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET,N CH,200V,31A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to +105°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Power Dissipation Pd:180W; Voltage Vgs Max:30V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
型號 製造商 描述 庫存 價格
IRFB31N20DPBF
DISTI # V99:2348_13889968		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube885
  • 10000:$0.8597
  • 5000:$0.8913
  • 2000:$0.9237
  • 1000:$0.9777
  • 500:$1.1767
  • 100:$1.2728
  • 10:$1.6040
  • 1:$1.8505
IRFB31N20DPBF
DISTI # V36:1790_13889968		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube793
  • 10000:$0.8597
  • 5000:$0.8913
  • 2000:$0.9237
  • 1000:$0.9777
  • 500:$1.1767
  • 100:$1.2728
  • 10:$1.6040
  • 1:$1.8505
IRFB31N20DPBF
DISTI # IRFB31N20DPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 31A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		637In Stock
  • 1000:$1.1226
  • 500:$1.3548
  • 100:$1.7419
  • 10:$2.1680
  • 1:$2.4000
IRFB31N20DPBF
DISTI # 30612859		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube1000
  • 200:$1.2164
  • 100:$1.2750
  • 50:$1.3642
  • 10:$1.7723
  • 8:$3.4297
IRFB31N20DPBF
DISTI # 30276997		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube885
  • 500:$1.1767
  • 100:$1.2728
  • 10:$1.6040
  • 9:$1.8505
IRFB31N20DPBF
DISTI # 31045708		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube793
  • 500:$1.1767
  • 100:$1.2728
  • 10:$1.6040
  • 9:$1.8505
IRFB31N20DPBF
DISTI # 7932783		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube340
  • 13:$0.7955
IRFB31N20DPBF
DISTI # IRFB31N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB31N20DPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1052
  • 1:$1.3089
  • 10:$1.1799
  • 25:$1.1769
  • 50:$1.1739
  • 100:$1.0139
  • 500:$1.0119
  • 1000:$0.9989
IRFB31N20DPBF
DISTI # SP001560192		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB (Alt: SP001560192)
RoHS: Compliant
Min Qty: 1		Europe - 19500
  • 1:€1.7829
  • 10:€1.5159
  • 25:€1.5119
  • 50:€1.5089
  • 100:€1.2049
  • 500:€1.0579
  • 1000:€0.8809
IRFB31N20DPBF
DISTI # IRFB31N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB (Alt: IRFB31N20DPBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRFB31N20DPBF
    DISTI # 57J2554    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 31A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.082ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,MSL:- RoHS Compliant: Yes69
    • 1:$1.9500
    • 10:$1.6500
    • 100:$1.3200
    • 500:$1.1600
    • 1000:$0.9610
    • 2500:$0.8930
    • 5000:$0.8590
    IRFB31N20DPBF.
    DISTI # 27AC6762    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 31A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.082ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,MSL:- RoHS Compliant: Yes0
    • 1:$2.1200
    • 10:$1.8000
    • 100:$1.4400
    • 500:$1.2400
    • 1000:$1.0300
    • 2500:$0.9510
    • 5000:$0.9150
    IRFB31N20DPBF
    DISTI # 70017529    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.082Ohm,ID 31A,TO-220AB,PD 200W,VGS +/-30V
    RoHS: Compliant    		0
    • 5:$4.2500
    • 10:$3.7500
    • 100:$3.2700
    • 500:$2.8400
    • 1000:$2.5000
    IRFB31N20DPBF
    DISTI # 942-IRFB31N20DPBF    		Infineon Technologies AGMOSFET MOSFT 200V 31A 82mOhm 70nC
    RoHS: Compliant    		1809
    • 1:$2.0800
    • 10:$1.7600
    • 100:$1.4100
    • 500:$1.2400
    • 1000:$1.0300
    • 2000:$0.9510
    • 5000:$0.9150
    IRFB31N20DPBFInfineon Technologies AGSingle N-Channel 200 V 0.082 Ohm 107 nC HEXFET Power Mosfet - TO-220-3
    RoHS: Compliant    		947Tube
    • 10:$1.0800
    • 100:$0.9750
    • 500:$0.8300
    IRFB31N20DPBF
    DISTI # 8273947    		Infineon Technologies AGMOSFET N-CH 200V 31A HEXFET SMPS TO220AB, PK145
    • 5:£1.6180
    • 50:£1.4220
    • 100:£1.2460
    • 250:£1.1640
    • 500:£1.1000
    IRFB31N20DPBF
    DISTI # 8655793    		Infineon Technologies AGMOSFET N-CH 200V 31A HEXFET SMPS TO220AB, TU65
    • 5:£1.6180
    • 100:£1.4220
    • 250:£1.2460
    • 500:£1.1640
    • 1000:£1.1000
    IRFB31N20DPBF
    DISTI # 8273947P    		Infineon Technologies AGMOSFET N-CH 200V 31A HEXFET SMPS TO220AB, TU785
    • 50:£1.4220
    • 100:£1.2460
    • 250:£1.1640
    • 500:£1.1000
    IRFB31N20DPBFInternational RectifierMOSFET Transistor, N-Channel, TO-220AB22
    • 11:$2.1900
    • 2:$2.6280
    • 1:$3.5040
    IRFB31N20DPBF
    DISTI # IRFB31N20DPBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,31A,200W,TO220AB3
    • 1:$1.6500
    • 3:$1.4900
    • 10:$1.2400
    • 100:$1.0700
    IRFB31N20DPBFInternational Rectifier 
    RoHS: Compliant    		Europe - 73
      IRFB31N20DPBF
      DISTI # IRFB31N20DPBF      		Infineon Technologies AGN-Ch 200V 31A 200W 0,082R TO220AB
      RoHS: Compliant      		400
      • 10:€1.1400
      • 50:€0.9045
      • 200:€0.8245
      • 500:€0.7940
      IRFB31N20DPBF
      DISTI # 8648751      		Infineon Technologies AGMOSFET, N, 200V, 31A, TO-220
      RoHS: Compliant      		1008
      • 1:$3.2900
      • 10:$2.7900
      • 100:$2.2300
      • 500:$1.9700
      • 1000:$1.6300
      • 2000:$1.5100
      • 5000:$1.4700
      IRFB31N20DPBF
      DISTI # XSKDRABS0006780      		Infineon Technologies AG 
      RoHS: Compliant      		13680
      • 1000:$1.4300
      • 13680:$1.3300
      IRFB31N20DPBF
      DISTI # XSLY00000000905      		Infineon Technologies AGTO-220AB
      RoHS: Compliant      		26280
      • 1000:$0.7143
      • 26280:$0.6667
      IRFB31N20DPBF
      DISTI # 8648751      		Infineon Technologies AGMOSFET, N, 200V, 31A, TO-220
      RoHS: Compliant      		1042
      • 1:£1.6500
      • 10:£1.3300
      • 100:£1.0900
      • 250:£1.0200
      • 500:£0.9540
      IRFB31N20DPBF
      DISTI # C1S322000631094      		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		1000
      • 500:$0.9280
      • 200:$0.9540
      • 100:$1.0000
      • 50:$1.0700
      • 10:$1.3900
      • 1:$2.6900
      IRFB31N20DPBF
      DISTI # C1S322000488270      		Infineon Technologies AGTrans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		945
      • 500:$1.1767
      • 100:$1.2728
      • 10:$1.6040
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      可用性
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      865
      訂購:
      2848
      輸入數量:
      IRFB31N20DPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$2.08
      US$2.08
      10
      US$1.76
      US$17.60
      100
      US$1.41
      US$141.00
      500
      US$1.24
      US$620.00
      1000
      US$1.03
      US$1 030.00
      2000
      US$0.95
      US$1 902.00
      5000
      US$0.92
      US$4 575.00
      10000
      US$0.88
      US$8 800.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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