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SI4686DY-T1-GE3

SI4686DY-T1-GE3
Mfr. #:
SI4686DY-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
生命週期:
製造商新產品
數據表:
SI4686DY-T1-GE3 數據表
交貨:
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支付:
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HTML Datasheet:
SI4686DY-T1-GE3 DatasheetSI4686DY-T1-GE3 Datasheet (P4-P6)SI4686DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
更多信息:
SI4686DY-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
SO-8
商品名：
溝槽場效應晶體管
打包：
捲軸
高度：
1.75 mm
長度：
4.9 mm
系列：
SI4
寬度：
3.9 mm
品牌：
威世 / Siliconix
產品類別：
MOSFET
出廠包裝數量：
2500
子類別：
MOSFET
第 # 部分別名：
SI4686DY-GE3
單位重量：
0.006596 oz
Tags
SI4686DY-T1, SI4686DY-T, SI4686, SI468, SI46, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    D***n
    D***n
    RU

    Levak of course but work

    2019-02-17
    S***v
    S***v
    RU

    It was 1,5 months, did not check, outwardly everything is fine.

    2019-01-30
    A***n
    A***n
    RU

    Everything corresponds to the declared characteristics

    2019-04-03
    E***l
    E***l
    BR

    All OK

    2019-05-22
***et Europe
Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R
***ment14 APAC
N CHANNEL MOSFET, 30V, 18.2A, SOIC
***ponent Sense
MOSFET SO8S N 0.0144R 30V 13A~
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:18.2A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型號 製造商 描述 庫存 價格
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.6930
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2500In Stock
  • 1000:$0.7648
  • 500:$0.9687
  • 100:$1.2491
  • 10:$1.5810
  • 1:$1.7800
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2500In Stock
  • 1000:$0.7648
  • 500:$0.9687
  • 100:$1.2491
  • 10:$1.5810
  • 1:$1.7800
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.5219
  • 5000:€0.3559
  • 10000:€0.3059
  • 15000:€0.2829
  • 25000:€0.2629
SI4686DY-T1-GE3
DISTI # SI4686DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4686DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.6189
  • 5000:$0.6009
  • 10000:$0.5759
  • 15000:$0.5599
  • 25000:$0.5449
SI4686DY-T1-GE3
DISTI # 15R5074		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 18.2A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
  • 1:$0.6170
  • 2500:$0.6120
  • 5000:$0.5940
  • 10000:$0.5720
SI4686DY-T1-GE3
DISTI # 26R1888		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 18.2A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
  • 1:$1.4900
  • 10:$1.2300
  • 25:$1.1300
  • 50:$1.0400
  • 100:$0.9410
  • 250:$0.8750
  • 500:$0.8090
SI4686DY-T1-GE3
DISTI # 781-SI4686DY-T1-GE3		Vishay IntertechnologiesMOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
RoHS: Compliant		2486
  • 1:$1.4900
  • 10:$1.2300
  • 100:$0.9410
  • 500:$0.8090
  • 1000:$0.6390
  • 2500:$0.5960
  • 5000:$0.5670
  • 10000:$0.5530
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可用性
庫存:
Available
訂購:
1985
輸入數量:
SI4686DY-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.78
US$1.78
10
US$1.58
US$15.80
100
US$1.24
US$124.00
500
US$0.97
US$484.00
1000
US$0.76
US$764.00
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