IPB70N04S3-07

Mfr. #:: IPB70N04S3-07
製造商:: Infineon Technologies
描述:: IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
生命週期:: 製造商新產品
數據表:: IPB70N04S3-07 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: OptiMOS-T

打包: 捲軸

部分別名: IPB70N04S307ATMA1 IPB70N04S307XT SP000279556

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

商品名: 優化MOS

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 79 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 7 ns

上升時間: 8 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 80 A

Vds-漏-源-擊穿電壓: 40 V

Rds-On-Drain-Source-Resistance: 6.2 mOhms

晶體管極性: N通道

典型關斷延遲時間: 17 ns

典型開啟延遲時間: 13 ns

通道模式: 增強

Tags: IPB70N04, IPB70N0, IPB70N, IPB70, IPB7, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB70N04S3-07 描述

*** Electronic Components: IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T

***et: Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.22uF 6.3Volts X6S 10%

*** Electronics: MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms

***ronik: N-CH 40V 80A 6mOhm TO263-3 RoHSconf

***ineon SCT: 40V, N-Ch, 5.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS

***et: Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263

*** Electronic Components: MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T

***i-Key: OPTLMOS N-CHANNEL POWER MOSFET

*** International: IPB80N04S3-06 Infineon Technologies

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

***p One Stop Global: Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Chip Resistor - Surface Mount 63.4kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 63.4K OHM 1% 1/10W 0402

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:80A; On Resistance, Rds(on):6.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263AB ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***emi: Power MOSFET 74 Amps, 30 Volts N-Channel D2PAK

***ponent Stockers USA: 74 A 30 V 0.0093 ohm N-CHANNEL Si POWER MOSFET

***ser: MOSFETs- Power and Small Signal 30V 74A N-Channel

***r Electronics: Power Field-Effect Transistor, 74A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: MOSFETs- Power and Small Signal 30V 74A N-Channel No-Cancel/No-Return

***i-Key: MOSFET N-CH 30V 74A D2PAK

***r Electronics: Power Field-Effect Transistor, 74A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

*** Electronics: N-CHANNEL POWER MOSFET

*** Source Electronics: Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor

***ure Electronics: Single N-Channel 40 V 4.2 mOhm 33 nC OptiMOS Power Mosfet - D2PAK

***ark: Mosfet, Aec-Q101, N-Ch, 40V, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0039Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

***ical: Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***icroelectronics: Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in a D2PAK package

***icroelectronics SCT: Automotive Power Discrete, 40V, 80A, D2PAK, Tape and Reel

***el Electronic: IC OFFLINE SWIT OTP CV/CC 8DIP

Market price

型號	製造商	描述	庫存	價格
IPB70N04S3-07 DISTI # IPB70N04S3-07TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB70N04S3-07 DISTI # IPB70N04S3-07CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB70N04S3-07 DISTI # IPB70N04S3-07DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB70N04S307ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 82A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252 RoHS: Compliant	2500	1000:$0.4000 500:$0.4200 100:$0.4400 25:$0.4500 1:$0.4900
IPB70N04S3-07 DISTI # 726-IPB70N04S3-07	Infineon Technologies AG	MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T RoHS: Compliant	0
IPB70N04S307ATMA1 DISTI # N/A	Infineon Technologies AG	MOSFET N-CHANNEL_30/40V	0

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