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FDB031N08

FDB031N08
Mfr. #:
FDB031N08
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 75V N-Channel PowerTrench
生命週期:
製造商新產品
數據表:
FDB031N08 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
75 V
Id - 連續漏極電流：
235 A
Rds On - 漏源電阻：
3.1 mOhms
Vgs - 柵源電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
375 W
配置：
單身的
頻道模式：
增強
商品名：
動力戰壕
打包：
捲軸
高度：
4.83 mm
長度：
10.67 mm
系列：
FDB031N08
晶體管類型：
1 N-Channel
寬度：
9.65 mm
品牌：
安森美半導體/飛兆半導體
秋季時間：
121 ns
產品類別：
MOSFET
上升時間：
191 ns
出廠包裝數量：
800
子類別：
MOSFET
典型關斷延遲時間：
335 ns
典型的開啟延遲時間：
230 ns
單位重量：
0.062153 oz
Tags
FDB03, FDB0, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 75 V 3.1 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 75V, 235A, 3.1mΩ
***Yang
Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ment14 APAC
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Source Voltage Vds:75V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 235A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
Trans MOSFET N-CH 75V 260A Automotive 7-Pin(6+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
***ure Electronics
N-Channel 60 V 2.4 mO Surface Mount PowerTrench Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 60V, 265A, 2.4mΩ
***Yang
Trans MOSFET N-CH 60V 265A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ark
MOSFET, N-CH, 60V, 293A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
***ical
Trans MOSFET N-CH Si 60V 270A Automotive 3-Pin(2+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; Dynamic dv/dt Rating; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***nell
MOSFET, N-CH, 60V, 293A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***(Formerly Allied Electronics)
IRFS3107PBF N-channel MOSFET Transistor; 230 A; 75 V; 3-Pin D2PAK
***roFlash
Single N-Channel 75 V 3 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 230A 3-Pin(2+Tab) D2PAK Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 370 W
***nell
MOSFET, N-CH, 75V, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 230A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.35V; Power D
***p One Stop Global
Trans MOSFET N-CH 80V 229A 7-Pin(6+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 80 V 246 W 178 nC PowerTrench Surface Mount Mosfet - TO-263-7
***emi
N-Channel PowerTrench® MOSFET 80V, 229A, 2.4mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***el Electronic
Chip Resistor - Surface Mount 16Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 16 OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ical
Trans MOSFET N-CH 60V 193A 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel PowerTrench® MOSFET 60V, 193A, 3.1mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 200kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 200K OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
型號 製造商 描述 庫存 價格
FDB031N08
DISTI # V72:2272_06300773		ON Semiconductor75V,235A,3.1M OHM,NCH POWER497
  • 250:$3.2100
  • 100:$3.4740
  • 25:$4.1070
  • 10:$4.1090
  • 1:$4.8040
FDB031N08
DISTI # V36:1790_06300773		ON Semiconductor75V,235A,3.1M OHM,NCH POWER0
    FDB031N08
    DISTI # FDB031N08CT-ND    		ON SemiconductorMOSFET N-CH 75V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1595In Stock
    • 100:$4.3271
    • 10:$5.2770
    • 1:$5.9100
    FDB031N08
    DISTI # FDB031N08DKR-ND    		ON SemiconductorMOSFET N-CH 75V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1595In Stock
    • 100:$4.3271
    • 10:$5.2770
    • 1:$5.9100
    FDB031N08
    DISTI # FDB031N08TR-ND    		ON SemiconductorMOSFET N-CH 75V 120A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		800In Stock
    • 2400:$2.7256
    • 1600:$2.8690
    • 800:$3.0739
    FDB031N08
    DISTI # 32316888    		ON Semiconductor75V,235A,3.1M OHM,NCH POWER5600
    • 800:$2.9175
    FDB031N08
    DISTI # 31601303    		ON Semiconductor75V,235A,3.1M OHM,NCH POWER497
    • 250:$3.2100
    • 100:$3.5760
    • 25:$4.1070
    • 10:$4.1090
    • 3:$4.8040
    FDB031N08
    DISTI # FDB031N08    		ON SemiconductorTrans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB031N08)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel    		Americas - 0
    • 800:$2.0900
    • 1600:$2.0900
    • 3200:$2.0900
    • 4800:$2.0900
    • 8000:$1.9900
    FDB031N08
    DISTI # 07P9157    		ON SemiconductorFET 75V 3.1 MOHM D2PAK / REEL0
    • 9600:$2.4500
    • 2400:$2.5300
    • 800:$2.7700
    • 1:$2.7900
    FDB031N08
    DISTI # 512-FDB031N08    		ON SemiconductorMOSFET 75V N-Channel PowerTrench
    RoHS: Compliant    		18377
    • 1:$4.9400
    • 10:$4.2000
    • 100:$3.6400
    • 250:$3.4500
    • 500:$3.1000
    FDB031N08ON SemiconductorN-Channel 75 V 3.1 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3
    RoHS: Compliant    		8800Reel
    • 800:$2.2700
    FDB031N08Fairchild Semiconductor Corporation 638
      FDB031N08Fairchild Semiconductor CorporationPower Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		Europe - 298
        FDB031N08
        DISTI # XSFP00000106362        		Fairchild Semiconductor Corporation 
        RoHS: Compliant        		7200 in Stock0 on Order
        • 7200:$4.1300
        • 800:$4.5400
        FDB031N08
        DISTI # 3004020        		ON SemiconductorMOSFET, N-CH, 235A, 75V, TO-263
        RoHS: Compliant        		0
        • 1000:$3.9000
        • 500:$4.2300
        • 250:$4.6200
        • 100:$5.0800
        • 10:$5.6300
        • 1:$6.3400
        圖片 型號 描述
        MAX44285HAUA+

        Mfr.#: MAX44285HAUA+

        OMO.#: OMO-MAX44285HAUA-

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        OMO.#: OMO-FDB52N20TM

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        NTSB30100CTT4G

        Mfr.#: NTSB30100CTT4G

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        		 Schottky Diodes & Rectifiers 30A 100V LVFR DUAL D2PAK
        EMZR500ARA101MF80G

        Mfr.#: EMZR500ARA101MF80G

        OMO.#: OMO-EMZR500ARA101MF80G

        		 Aluminum Electrolytic Capacitors - SMD 100uF 50V 20%
        TEH140M1R00FE

        Mfr.#: TEH140M1R00FE

        OMO.#: OMO-TEH140M1R00FE

        		 Thick Film Resistors - Through Hole 1 ohm 1% 140W HEATSINK RES
        GRM32ER71E226ME15K

        Mfr.#: GRM32ER71E226ME15K

        OMO.#: OMO-GRM32ER71E226ME15K

        		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 22UF 25V 20% 1210
        MAX44285HAUA+

        Mfr.#: MAX44285HAUA+

        OMO.#: OMO-MAX44285HAUA--MAXIM-INTEGRATED

        		 Current Sense Amplifiers Dual Current-Sense with Wide Input Common Mode
        FDB52N20TM

        Mfr.#: FDB52N20TM

        OMO.#: OMO-FDB52N20TM-ON-SEMICONDUCTOR

        		 MOSFET N-CH 200V 52A D2PAK
        NTSB30100CTT4G

        Mfr.#: NTSB30100CTT4G

        OMO.#: OMO-NTSB30100CTT4G-ON-SEMICONDUCTOR

        		 Schottky Diodes & Rectifiers 30A 100V LVFR DUAL D2PAK
        可用性
        庫存:
        18
        訂購:
        2001
        輸入數量:
        FDB031N08的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$4.94
        US$4.94
        10
        US$4.20
        US$42.00
        100
        US$3.64
        US$364.00
        250
        US$3.45
        US$862.50
        500
        US$3.10
        US$1 550.00
        由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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