SIRA90DP-T1-GE3

Mfr. #:: SIRA90DP-T1-GE3
製造商:: Vishay / Siliconix
描述:: MOSFET 30V Vds 100A Id Qg 48nC Typ.
生命週期:: 製造商新產品
數據表:: SIRA90DP-T1-GE3 數據表
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HTML Datasheet:: SIRA90DP-T1-GE3 Datasheet SIRA90DP-T1-GE3 Datasheet (P4-P6)SIRA90DP-T1-GE3 Datasheet (P7-P9)SIRA90DP-T1-GE3 Datasheet (P10-P12)SIRA90DP-T1-GE3 Datasheet (P13)
ECAD Model:

產品屬性
屬性值

製造商：: 威世

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: PowerPAK-SO-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 30 V

Id - 連續漏極電流：: 100 A

Rds On - 漏源電阻：: 650 uOhms

Vgs th - 柵源閾值電壓：: 800 mV

Vgs - 柵源電壓：: 20 V, - 16 V

Qg - 門電荷：: 153 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 104 W

配置：: 單身的

頻道模式：: 增強

商品名：: TrenchFET、PowerPAK

打包：: 捲軸

系列：: 先生

晶體管類型：: 1 N-Channel

品牌：: 威世 / Siliconix

正向跨導 - 最小值：: 110 S

秋季時間：: 10 ns

產品類別：: MOSFET

上升時間：: 16 ns

出廠包裝數量：: 3000

子類別：: MOSFET

典型關斷延遲時間：: 46 ns

典型的開啟延遲時間：: 15 ns

單位重量：: 0.002610 oz

Tags: SIRA9, SIRA, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIRA90DP-T1-GE3 描述

***et Europe: MOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET N-CH 30V 100A POWERPAKSO

***ark: MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:104W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)

***nell: MOSFET, CA-N, 30V, 100A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):650µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:104W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)

Market price

型號	製造商	描述	庫存	價格
SIRA90DP-T1-GE3 DISTI # SIRA90DP-T1-GE3-ND	Vishay Siliconix	MOSFET N-CH 30V 100A POWERPAKSO RoHS: Compliant Min Qty: 6000 Container: Tape & Reel (TR)	Temporarily Out of Stock	6000:$0.5264
SIRA90DP-T1-GE3 DISTI # SIRA90DP-T1-GE3	Vishay Intertechnologies	MOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA90DP-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.4819 30000:$0.4949 18000:$0.5089 12000:$0.5309 6000:$0.5469
SIRA90DP-T1-GE3 DISTI # SIRA90DP-T1-GE3	Vishay Intertechnologies	MOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R (Alt: SIRA90DP-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1000:€0.5249 500:€0.5319 100:€0.5409 50:€0.5489 25:€0.6209 10:€0.7659 1:€1.0679
SIRA90DP-T1-GE3 DISTI # 20AC3876	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET	0	10000:$0.4780 6000:$0.4890 4000:$0.5080 2000:$0.5640 1000:$0.6210 1:$0.6470
SIRA90DP-T1-GE3 DISTI # 15AC8636	Vishay Intertechnologies	MOSFET, N-CH, 30V, 100A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):650µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes	0	500:$0.7220 250:$0.7810 100:$0.8390 50:$0.9270 25:$1.0100 10:$1.1000 1:$1.3300
SIRA90DP-T1-GE3 DISTI # 78-SIRA90DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 100A Id Qg 48nC Typ. RoHS: Compliant	967	1:$1.3100 10:$1.0800 100:$0.8310 500:$0.7150 1000:$0.5640
SIRA90DP-T1-GE3 DISTI # 2749593	Vishay Intertechnologies	MOSFET, N-CH, 30V, 100A, POWERPAK SO	0	500:£0.5610 250:£0.6070 100:£0.6530 25:£0.8490 5:£0.9410
SIRA90DP-T1-GE3 DISTI # 2749593	Vishay Intertechnologies	MOSFET, N-CH, 30V, 100A, POWERPAK SO RoHS: Compliant	0	1000:$0.8850 500:$0.9380 250:$1.1100 100:$1.3400 10:$1.7200 1:$2.0700

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