A2G22S251-01SR3

Mfr. #:: A2G22S251-01SR3
製造商:: NXP / Freescale
描述:: RF Amplifier A2G22S251-01S/CFM2F///REEL 13 Q2 DP
生命週期:: 製造商新產品
數據表:: A2G22S251-01SR3 數據表
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更多信息:: A2G22S251-01SR3 更多信息

產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻放大器

打包：: 捲軸

品牌：: 恩智浦/飛思卡爾

產品類別：: 射頻放大器

出廠包裝數量：: 250

子類別：: 無線和射頻集成電路

第 # 部分別名：: 935313179528

單位重量：: 0 oz

Tags: A2G22S2, A2G22, A2G2, A2G

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A2G22S251-01SR3 描述

***et Europe: RF Power GaN Transistor 1800-2200MHz 48V 51dBm 125W 32W AVG W-CDMA 19.6dB@2110MHz

***ark: Airfast Rf Power Gan Transistor, 2300-2690 Mhz, 60 W Avg., 48 V

***W: RF Power Transistor,1805 to 2200 MHz, 158 W, Typ Gain in dB is 17.7 @ 2170 MHz, 48 V, GaN, SOT1828

A2G22S251-01SR3 更多信息

NXP RF-IF Solutions: NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More

RF Power GaN Portfolio: NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.

Market price

型號	製造商	描述	庫存	價格
A2G22S251-01SR3 DISTI # A2G22S251-01SR3-ND	NXP Semiconductors	AIRFAST RF POWER GAN TRANSISTOR RoHS: Not compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$114.9059
A2G22S251-01SR3 DISTI # A2G22S251-01SR3	NXP Semiconductors	RF Power GaN Transistor 1800-2200MHz 48V 51dBm 125W 32W AVG W-CDMA 19.6dB@2110MHz - Tape and Reel (Alt: A2G22S251-01SR3) RoHS: Compliant Min Qty: 250 Container: Reel	Americas - 0	250:$125.8900 500:$120.9900 1000:$116.1900 1500:$111.9900 2500:$109.8900
A2G22S251-01SR3 DISTI # 841-A2G22S25A3A5641	NXP Semiconductors	RF Amplifier Airfast RF Power GaN Transistor, 1805-2200 MHz, 48 W Avg., 48 V RoHS: Compliant	0	250:$129.5900
A2G22S251-01SR3 DISTI # A2G22S251-01SR3	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	138	1:$148.7100 10:$137.4500 25:$133.4000

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圖片	型號	描述
	Mfr.#: A2G22S251-01SR3 OMO.#: OMO-A2G22S251-01SR3	RF Amplifier A2G22S251-01S/CFM2F///REEL 13 Q2 DP
	Mfr.#: A2G22S251-01SR3 OMO.#: OMO-A2G22S251-01SR3-NXP-SEMICONDUCTORS	RF Amplifier AIRFAST RF Power GaN Transistor, 2300-2690 MHz, 60 W AVG., 48 V
	Mfr.#: A2G22S251 OMO.#: OMO-A2G22S251-1190	全新原裝
	Mfr.#: A2G22S251-01S OMO.#: OMO-A2G22S251-01S-1190	全新原裝