OMO ElectronicOMO Electronic
Expand menu
0 購物車

HGTP12N60C3D

HGTP12N60C3D
Mfr. #:
HGTP12N60C3D
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors HGTP12N60C3D
生命週期:
製造商新產品
數據表:
HGTP12N60C3D 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-220-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
1.65 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
24 A
Pd - 功耗：
104 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 150 C
系列：
HGTP12N60C3D
打包：
管子
連續集電極電流 Ic 最大值：
24 A
高度：
9.4 mm
長度：
10.67 mm
寬度：
4.83 mm
品牌：
安森美半導體/飛兆半導體
連續集電極電流：
24 A
柵極-發射極漏電流：
+/- 100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
800
子類別：
IGBT
第 # 部分別名：
HGTP12N60C3D_NL
單位重量：
0.063493 oz
Tags
HGTP12N60C3D, HGTP12N60C, HGTP12, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    P***f
    P***f
    DE

    Alles ok

    2019-04-04
    M***y
    M***y
    RU

    Ok! Did not check

    2019-07-14
***ical
Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail
***p One Stop Global
Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
HGTP12N60C3D Series 600 V 24 A Flange Mount UFS N-Channel IGBT-TO-220AB
***inecomponents.com
600V,24A,UFS SERIES NCH IGBT,W/ANTI-PARALLEL HYPERFAST DIODE
***i-Key
IGBT SMPS N-CH 600V 24A TO-220AB
***ark
Ptpigbt To220 24A 600V Rohs Compliant: Yes
***eco
3 LD PLASTIC W/EXPOSED HEATSNK <AZ
***Semiconductor
600V, UFS IGBT
***ser
IGBTs HGTP12N60C3D
***rchild Semiconductor
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49182.
型號 製造商 描述 庫存 價格
HGTP12N60C3D
DISTI # V36:1790_06359238		ON SemiconductorPTPIGBT TO220 24A 600V780
  • 800:$3.2470
HGTP12N60C3D
DISTI # V99:2348_06359238		ON SemiconductorPTPIGBT TO220 24A 600V550
  • 5000:$2.0330
  • 2500:$2.0660
  • 1000:$2.1669
  • 500:$2.1900
  • 250:$2.3430
  • 100:$2.4580
  • 10:$2.8190
  • 1:$3.2470
HGTP12N60C3D
DISTI # HGTP12N60C3D-ND		ON SemiconductorIGBT 600V 24A 104W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1600:$2.0421
  • 800:$2.4214
  • 100:$2.8444
  • 10:$3.4720
  • 1:$3.8700
HGTP12N60C3D
DISTI # 30329720		ON SemiconductorPTPIGBT TO220 24A 600V780
  • 500:$2.1900
  • 250:$2.3430
  • 100:$2.4580
  • 10:$2.8190
  • 5:$3.2470
HGTP12N60C3D
DISTI # 26156899		ON SemiconductorPTPIGBT TO220 24A 600V550
  • 500:$2.1900
  • 250:$2.3430
  • 100:$2.4580
  • 10:$2.8190
  • 3:$3.2470
HGTP12N60C3D
DISTI # 14141576		ON SemiconductorPTPIGBT TO220 24A 600V400
  • 10:$1.1094
HGTP12N60C3D
DISTI # HGTP12N60C3D		ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP12N60C3D)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.5900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.5900
  • 8000:$1.4900
HGTP12N60C3D
DISTI # 58K1596		ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 58K1596)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$4.0500
  • 10:$3.4400
  • 25:$3.2900
  • 50:$3.1400
  • 100:$2.9800
  • 250:$2.8400
  • 500:$2.5400
HGTP12N60C3D
DISTI # 58K1596		ON SemiconductorSINGLE IGBT, 600V, 24A,DC Collector Current:24A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:104W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- , RoHS Compliant: Yes329
  • 1:$4.0500
  • 10:$3.4400
  • 25:$3.2900
  • 50:$3.1400
  • 100:$2.9800
  • 250:$2.8400
  • 500:$2.5400
HGTP12N60C3D.
DISTI # 27AC6332		Fairchild Semiconductor CorporationPTPIGBT TO220 24A 600V , ROHS COMPLIANT: YES0
  • 1:$4.1300
  • 10:$3.5100
  • 25:$3.3600
  • 50:$3.1400
  • 100:$2.9800
  • 250:$2.8400
  • 500:$2.5400
HGTP12N60C3DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB
RoHS: Compliant		30
  • 1000:$2.9600
  • 500:$3.1100
  • 100:$3.2400
  • 25:$3.3800
  • 1:$3.6400
HGTP12N60C3DON SemiconductorHGTP12N60C3D Series 600 V 24 A Flange Mount UFS N-Channel IGBT-TO-220AB
RoHS: Compliant		3999Tube
  • 5:$2.4200
  • 50:$2.2000
  • 300:$1.8300
HGTP12N60C3D
DISTI # 512-HGTP12N60C3D		ON SemiconductorIGBT Transistors HGTP12N60C3D
RoHS: Compliant		17
  • 1:$3.6800
  • 10:$3.1300
  • 100:$2.7100
  • 250:$2.5800
  • 500:$2.3100
  • 1000:$1.9500
  • 2500:$1.8500
HGTP12N60C3D
DISTI # C1S541901409674		ON SemiconductorTrans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		550
  • 500:$2.1900
  • 100:$2.4580
  • 1:$3.2470
HGTP12N60C3D
DISTI # XSFP00000011186		Fairchild Semiconductor Corporation 
RoHS: Compliant		2691
  • 50:$4.8400
  • 2691:$4.4000
圖片 型號 描述
IR2117PBF

Mfr.#: IR2117PBF

OMO.#: OMO-IR2117PBF

 Gate Drivers 1 HI SIDE DRVR NONINVERTING INPUT
IR21531DPBF

Mfr.#: IR21531DPBF

OMO.#: OMO-IR21531DPBF

 Gate Drivers HALF BRDG DRVR 600V 15.6Vclamp 0.6
MIC4420YN

Mfr.#: MIC4420YN

OMO.#: OMO-MIC4420YN

 Gate Drivers 6A Hi-Speed, Hi-Current Single MOSFET Driver
MIC4428YN

Mfr.#: MIC4428YN

OMO.#: OMO-MIC4428YN

 Gate Drivers 1.5A Dual High Speed MOSFET Driver
HFA08TB60PBF

Mfr.#: HFA08TB60PBF

OMO.#: OMO-HFA08TB60PBF

 Rectifiers 8A 600V Ultrafast diode
HFA15TB60PBF

Mfr.#: HFA15TB60PBF

OMO.#: OMO-HFA15TB60PBF

 Rectifiers 15A 600V Ultrafast diode
IRFP460PBF

Mfr.#: IRFP460PBF

OMO.#: OMO-IRFP460PBF

 MOSFET N-CH 500V HEXFET MOSFET
IRF830PBF

Mfr.#: IRF830PBF

OMO.#: OMO-IRF830PBF

 MOSFET N-CH 500V HEXFET MOSFET
SPW47N60C3

Mfr.#: SPW47N60C3

OMO.#: OMO-SPW47N60C3

 MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3
ECA-1HHG102

Mfr.#: ECA-1HHG102

OMO.#: OMO-ECA-1HHG102

 Aluminum Electrolytic Capacitors - Radial Leaded 1000uF 50V
可用性
庫存:
715
訂購:
2698
輸入數量:
HGTP12N60C3D的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$3.67
US$3.67
10
US$3.12
US$31.20
100
US$2.71
US$271.00
250
US$2.57
US$642.50
500
US$2.30
US$1 150.00
從...開始
最新產品
More Newest Products
Top