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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| SI4963DY | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 48432 |
|
| SI4963DY | Vishay Siliconix | MOSFET Transistor, Matched Pair, P-Channel, SO | 96 |
|
| SI4963DY | Freescale Semiconductor | MOSFET Transistor, Matched Pair, P-Channel, SO | 1350 |
|
| SI4963DY | Vishay Intertechnologies | MOSFET Transistor, Matched Pair, P-Channel, SO | 153 |
|
| SI4963DY | Vishay Siliconix | MOSFET Transistor, Matched Pair, P-Channel, SO | 14 |
|
| SI4963DY-T1 | N/A | 125 |
| |
| SI4963DY-T1-E3 | Vishay Siliconix | MOSFET Transistor, Matched Pair, P-Channel, SO | 4 |
|
| SI4963DY-T1-E3 | Vishay Intertechnologies | MOSFET Transistor, Matched Pair, P-Channel, SO | 1535 |
|
| SI4963DY | Vishay Intertechnologies | 192 | ||
| SI4963DY-T1 | Vishay Intertechnologies | 2076 | ||
| SI4963DY DISTI # 9550640 | Vishay Intertechnologies | MOSFET, DUAL PP SO-8 RoHS: Compliant | 0 |
|
| SI4963DYT1 | Vishay Intertechnologies | RoHS: Not Compliant | Europe - 125 |
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: SI4900DY-T1-GE3 OMO.#: OMO-SI4900DY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 60V 5.3A 3.1W 58mohm @ 10V |
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Mfr.#: SI4909DY-T1-GE3-CUT TAPE |
全新原裝 |
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Mfr.#: SI4914DY-T1-E3 OMO.#: OMO-SI4914DY-T1-E3-VISHAY |
MOSFET 2N-CH 30V 5.5A 8-SOIC |
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Mfr.#: SI4919DY-T1-E3 OMO.#: OMO-SI4919DY-T1-E3-1190 |
全新原裝 |
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Mfr.#: SI4920DY-T1-GE3 OMO.#: OMO-SI4920DY-T1-GE3-VISHAY |
MOSFET 2N-CH 30V 8-SOIC |
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Mfr.#: SI4925DY-TI OMO.#: OMO-SI4925DY-TI-1190 |
全新原裝 |
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Mfr.#: SI4936BDY OMO.#: OMO-SI4936BDY-1190 |
全新原裝 |
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Mfr.#: SI4936DY-T1-GE3 OMO.#: OMO-SI4936DY-T1-GE3-1190 |
全新原裝 |
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Mfr.#: SI4940DY-T1-E3 OMO.#: OMO-SI4940DY-T1-E3-VISHAY |
MOSFET 2N-CH 40V 4.2A 8-SOIC |
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Mfr.#: SI4963DY OMO.#: OMO-SI4963DY-1190 |
Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |