MWE6IC9100NR1

Mfr. #:: MWE6IC9100NR1
製造商:: NXP / Freescale
描述:: RF Amplifier 100W 26V GSM
生命週期:: 製造商新產品
數據表:: MWE6IC9100NR1 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻放大器

RoHS：: E

安裝方式：: 貼片/貼片

類型：: 功率放大器

工作頻率：: 869 MHz to 960 MHz

獲得：: 33.5 dB

最高工作溫度：: + 200 C

打包：: 捲軸

品牌：: 恩智浦/飛思卡爾

通道數：: 1 Channel

輸入回波損耗：: 15 dB

濕氣敏感：: 是的

產品類別：: 射頻放大器

出廠包裝數量：: 500

子類別：: 無線和射頻集成電路

電源電壓 - 最大值：: 32 V

電源電壓 - 最小值：: 26 V

單位重量：: 0.058255 oz

Tags: MWE6IC9100N, MWE6IC91, MWE6I, MWE6, MWE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MWE6IC9100NR1 描述

***et Europe: RF Amp Module Single Power Amp 960MHz 32V 15-Pin TO-270 W T/R

***el Electronic: IC RF AMP GSM 960MHZ TO270 WB-14

***i-Key: IC PWR AMP RF LDMOS TO270-14

***escale Semiconductor: GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 1990 MHz, 100 W, 28 V

***ical: RF Amp Chip Single Power Amp 2.05GHz 32V 14-Pin TO-270 WB EP T/R

***ponent Stockers USA: 1805 MHz - 2050 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

***escale Semiconductor: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 32 W Avg., 28 V

***et: RF Amp Chip Dual Power Amp 2.17GHz 32V 15-Pin TO-270 W GULL T/R

***i-Key: IC PWR AMP RF 2170MHZ TO-270-14

***escale Semiconductor: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V

***W: Amplifier,1880 to 2025 MHz, 60 W, Typ Gain in dB is 30.5 @ 2025 MHz, 28 V, LDMOS, SOT1720

***ical: RF Amp Module Dual GP Amp 2.05GHz 32V 14-Pin TO-270 WB T/R

***escale Semiconductor: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V

***ical: RF Amp Module Dual GP Amp 2.05GHz 32V 14-Pin(12+2Tab) TO-270 WB GULL T/R

***W: Amplifier,1880 to 2025 MHz, 60 W, Typ Gain in dB is 30.5 @ 2025 MHz, 28 V, LDMOS, SOT1720

***escale Semiconductor: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 5.3 W Avg., 28 V

***ical: RF Amp Module Single Power Amp 2.17GHz 32V 15-Pin TO-270 W T/R

***i-Key: IC AMP PWR RF 2100MHZ TO270-14

***ponent Stockers USA: TELECOM CELLULAR RF AND BASEBAND CIRCUIT PDFM14

***escale Semiconductor: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 1.3 W Avg., 28 V

***et: RF Amp Chip Dual Power Amplifier 2170MHz 32V 14-Pin TO-270WB T/R

***W: Amplifier,1805 to 2170 MHz, 12 W, Typ Gain in dB is 31.5 @ 2170 MHz, 28 V, LDMOS, SOT1720

***p One Stop Global: RF Amp Module Dual Power Amp 2.17GHz 32V 15-Pin TO-270 W GULL T/R

Market price

型號	製造商	描述	庫存	價格
MWE6IC9100NR1 DISTI # MWE6IC9100NR1-ND	NXP Semiconductors	IC RF AMP GSM 960MHZ TO270 WB-14 RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	Limited Supply - Call
MWE6IC9100NR1 DISTI # MWE6IC9100NR1	Avnet, Inc.	RF Amp Module Single Power Amp 960MHz 32V 15-Pin TO-270 W T/R - Bulk (Alt: MWE6IC9100NR1) Min Qty: 6 Container: Bulk	Americas - 0	60:$58.0900 30:$59.1900 18:$61.4900 12:$63.9900 6:$66.5900
MWE6IC9100NR1 DISTI # 841-MWE6IC9100NR1	NXP Semiconductors	RF Amplifier 100W 26V GSM RoHS: Compliant	0
MWE6IC9100NR1	Freescale Semiconductor	Narrow Band High Power Amplifier, 869MHz Min, 960MHz Max RoHS: Compliant	149	1000:$60.1600 500:$63.3200 100:$65.9300 25:$68.7500 1:$74.0400

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