SQJB60EP-T1_GE3

Name: Vishay - SQJB60EP-T1_GE3
Brand: Vishay
SKU: OMO-4142875
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SQJB60EP-T1_GE3
製造商:: Vishay
描述:: MOSFET 2 N-CH 60V POWERPAK SO8
生命週期:: 製造商新產品
數據表:: SQJB60EP-T1_GE3 數據表
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更多信息:: SQJB60EP-T1_GE3 更多信息

產品屬性
屬性值

Tags: SQJB6, SQJB, SQJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQJB60EP-T1_GE3 描述

***ical: Trans MOSFET N-CH 60V 30A Automotive 8-Pin PowerPAK SO EP

***et: Trans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET 2 N-CH 60V POWERPAK SO8

***ronik: N+N-CH 60V 30A 12mOhm PPAK SO8L

***ark: Mosfet, Aec-Q101, Dual N-Ch, Powerpakso; Transistor Polarity:dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.01Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:48W; Transistor Case Style:PowerPAK SO; No. of Pins:6Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)

***nell: MOSFET, AEC-Q101, DOPPIO CA-N POWERPAKSO; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.01ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:48W; Modello Case Transistor:PowerPAK SO; No. di Pin:6Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)

SQJB60EP-T1_GE3 更多信息

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

型號	製造商	描述	庫存	價格
SQJB60EP-T1_GE3 DISTI # V72:2272_17600342	Vishay Intertechnologies	SQJB60EP-T1_GE3**MULT1 9172 3107019	2780	3000:$0.4744
SQJB60EP-T1_GE3 DISTI # V36:1790_17600342	Vishay Intertechnologies	SQJB60EP-T1_GE3**MULT1 9172 3107019	0
SQJB60EP-T1_GE3 DISTI # SQJB60EP-T1_GE3TR-ND	Vishay Siliconix	MOSFET 2 N-CH 60V POWERPAK SO8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	6000:$0.4368 3000:$0.4586
SQJB60EP-T1_GE3 DISTI # SQJB60EP-T1_GE3CT-ND	Vishay Siliconix	MOSFET 2 N-CH 60V POWERPAK SO8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.5061 500:$0.6411 100:$0.7761 10:$0.9950 1:$1.1100
SQJB60EP-T1_GE3 DISTI # SQJB60EP-T1_GE3DKR-ND	Vishay Siliconix	MOSFET 2 N-CH 60V POWERPAK SO8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.5061 500:$0.6411 100:$0.7761 10:$0.9950 1:$1.1100
SQJB60EP-T1_GE3 DISTI # SQJB60EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R (Alt: SQJB60EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.4359 18000:€0.4549 12000:€0.5149 6000:€0.6349 3000:€0.8859
SQJB60EP-T1_GE3 DISTI # SQJB60EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R (Alt: SQJB60EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SQJB60EP-T1_GE3 DISTI # SQJB60EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJB60EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.3999 18000:$0.4109 12000:$0.4219 6000:$0.4399 3000:$0.4539
SQJB60EP-T1_GE3 DISTI # 20AC3998	Vishay Intertechnologies	DUAL N-CHANNEL 60-V (D-S) 175C MOSFE	0	10000:$0.3970 6000:$0.4060 4000:$0.4220 2000:$0.4680 1000:$0.5150 1:$0.5370
SQJB60EP-T1_GE3 DISTI # 99Y9674	Vishay Intertechnologies	MOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes	1360	500:$0.7070 250:$0.8050 100:$0.9040 50:$0.9700 25:$1.0400 10:$1.1000 1:$1.2400
SQJB60EP-T1_GE3 DISTI # 78-SQJB60EP-T1_GE3	Vishay Intertechnologies	MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified RoHS: Compliant	0	1:$1.2300 10:$1.0900 100:$0.8950 500:$0.7000 1000:$0.5590 3000:$0.5080 6000:$0.4390 9000:$0.4220
SQJB60EP-T1_GE3 DISTI # TMOS1701	Vishay Intertechnologies	N+N-CH 60V 30A 12mOhm PPAK SO8L RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.5111
SQJB60EP-T1_GE3 DISTI # 2663702	Vishay Intertechnologies	MOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO RoHS: Compliant	1360	100:$1.3300 10:$1.6800 1:$1.9000
SQJB60EP-T1_GE3 DISTI # 2663702	Vishay Intertechnologies	MOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO	1446	100:£0.7540 25:£0.9810 5:£1.0900