SIHFIB16N50K-E3

Mfr. #:: SIHFIB16N50K-E3
製造商:: Vishay / Siliconix
描述:: RF Bipolar Transistors MOSFET 500V 6.7A 45W 350mohm @ 10V
生命週期:: 製造商新產品
數據表:: SIHFIB16N50K-E3 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: SIHFIB16N50K-E3 更多信息

產品屬性
屬性值

製造商: 威世

產品分類: 集成電路芯片

系列: E

打包: 管子

單位重量: 0.211644 oz

包裝盒: TO-220-3

技術: 矽

通道數: 1 Channel

晶體管型: 1 N-Channel

鈀功耗: 45 W

Id 連續漏極電流: 6.7 A

Vds-漏-源-擊穿電壓: 500 V

Rds-On-Drain-Source-Resistance: 350 mOhms

晶體管極性: N通道

Qg-門電荷: 89 nC

Tags: SIHFIB1, SIHFIB, SIHFI, SIHF, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHFIB16N50K-E3 描述

***et: Trans MOSFET N-CH 500V 6.7A 3-Pin(3+Tab) TO-220 Full-Pack

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.7A; Drain Source Voltage, Vds:500V; On Resistance, Rds(on):0.29ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V ;RoHS Compliant: Yes

SIHFIB16N50K-E3 更多信息

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

型號	製造商	描述	庫存	價格
SIHFIB16N50K-E3 DISTI # SIHFIB16N50K-E3	Vishay Intertechnologies	Trans MOSFET N-CH 500V 6.7A 3-Pin(3+Tab) TO-220 Full-Pack - Rail/Tube (Alt: SIHFIB16N50K-E3) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$2.9900 2000:$2.8900 4000:$2.7900 6000:$2.6900 10000:$2.5900
SIHFIB16N50K-E3 DISTI # 781-SIHFIB16N50K-E3	Vishay Intertechnologies	MOSFET 500V 6.7A 45W 350mohm @ 10V RoHS: Compliant	0	1000:$2.9300

相關產品

圖片	型號	描述
	Mfr.#: SIHFIB16N50K-E3 OMO.#: OMO-SIHFIB16N50K-E3	MOSFET 500V 6.7A 45W 350mohm @ 10V
	Mfr.#: SIHFIB16N50K-E3 OMO.#: OMO-SIHFIB16N50K-E3-317	RF Bipolar Transistors MOSFET 500V 6.7A 45W 350mohm @ 10V
	Mfr.#: SIHFIB11N50A OMO.#: OMO-SIHFIB11N50A-1190	全新原裝
	Mfr.#: SIHFIB11N50A,SIHFIB11N50 OMO.#: OMO-SIHFIB11N50A-SIHFIB11N50-1190	全新原裝
	Mfr.#: SIHFIB11N50A-E3 OMO.#: OMO-SIHFIB11N50A-E3-1190	全新原裝