FDS8333C

FDS8333C
Mfr. #:
FDS8333C
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET N & PCh PowerTrench 3V
生命週期:
製造商新產品
數據表:
FDS8333C 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDS8333C DatasheetFDS8333C Datasheet (P4-P6)FDS8333C Datasheet (P7-P8)
ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
SO-8
通道數:
2 Channel
晶體管極性:
N溝道,P溝道
Vds - 漏源擊穿電壓:
30 V
Id - 連續漏極電流:
4.1 A
Rds On - 漏源電阻:
80 mOhms
Vgs - 柵源電壓:
16 V, 20 V
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
2 W
配置:
雙重的
頻道模式:
增強
打包:
捲軸
高度:
1.75 mm
長度:
4.9 mm
系列:
FDS8333C
晶體管類型:
1 N-Channel, 1 P-Channel
類型:
MOSFET
寬度:
3.9 mm
品牌:
安森美半導體/飛兆半導體
正向跨導 - 最小值:
5 S
秋季時間:
1.5 ns, 2 ns
產品類別:
MOSFET
上升時間:
6 ns, 13 ns
出廠包裝數量:
2500
子類別:
MOSFET
典型關斷延遲時間:
19 ns, 11 ns
典型的開啟延遲時間:
4.5 ns, 4.5 ns
第 # 部分別名:
FDS8333C_NL
單位重量:
0.008127 oz
Tags
FDS833, FDS83, FDS8, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N/P-CH 30V 4.1A/3.4A 8-Pin SOIC N T/R
***et
TRANS MOSFET N/P-CH 30V 4.1A/3.4A 8SOIC
*** Source Electronics
MOSFET N/P-CH 30V 8SOIC
***nell
MOSFET, DUAL, NP, SMD, SO-8
***inecomponents.com
30V/16V/30V/25V, 80/130MO/130/200MO, DUAL, SO8
***ser
MOSFETs N & PCh PowerTrench 3V
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4.1A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***rchild Semiconductor
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ment14 APAC
MOSFET, DUAL, NP, SMD, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:4.1A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
型號 製造商 描述 庫存 價格
FDS8333C
DISTI # FDS8333C-ND
ON SemiconductorMOSFET N/P-CH 30V 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    FDS8333C
    DISTI # 512-FDS8333C
    ON SemiconductorMOSFET N & PCh PowerTrench 3V
    RoHS: Compliant
    0
      FDS8333C_Q
      DISTI # 512-FDS8333C_Q
      ON SemiconductorMOSFET N & PCh PowerTrench 3V
      RoHS: Not compliant
      0
        FDS8333C
        DISTI # 1471057
        ON SemiconductorMOSFET, DUAL, NP, SMD, SO-8
        RoHS: Compliant
        0
        • 1000:$0.3790
        • 500:$0.4040
        • 250:$0.4830
        • 100:$0.5720
        • 25:$0.7940
        • 1:$0.9460
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        可用性
        庫存:
        Available
        訂購:
        3000
        輸入數量:
        FDS8333C的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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