FW4604-TL-2W

Mfr. #:: FW4604-TL-2W
製造商:: ON Semiconductor
描述:: MOSFET NCH+PCH 4.5V DRIVE
生命週期:: 製造商新產品
數據表:: FW4604-TL-2W 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: SOIC-8

通道數：: 2 Channel

晶體管極性：: N溝道，P溝道

Vds - 漏源擊穿電壓：: 30 V

Id - 連續漏極電流：: 6 A, -4.5 A

Rds On - 漏源電阻：: 39 mOhms, 65 mOhms

Vgs th - 柵源閾值電壓：: 4 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 120 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 2.2 W

配置：: 雙重的

頻道模式：: 增強

打包：: 捲軸

系列：: FW4604

晶體管類型：: 1 N-Channel

品牌：: 安森美半導體

正向跨導 - 最小值：: -

開發套件：: -

秋季時間：: 40 ns

產品類別：: MOSFET

上升時間：: 42 ns

出廠包裝數量：: 2500

子類別：: MOSFET

典型關斷延遲時間：: 43 ns

典型的開啟延遲時間：: 7.5 ns

單位重量：: 0.019048 oz

Tags: FW46, FW4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FW4604-TL-2W 描述

***emi: Power MOSFET, 30V, -4.5A/6A, 65mΩ/39mΩ, Complementary Dual SOIC8

***r Electronics: Power Field-Effect Transistor, 6A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET

***Yang: Trans MOSFET N/P-CH 30V 6A/4.5A 8-Pin SOIC T/R - Tape and Reel

***ark: Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(On):0.039Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:8Pins Rohs Compliant: Yes

***Yang: Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel

***emi: Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 5.5A, 38mΩ

***enic: 30V 5.5A 38m´Î@10V5.5A 2W 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintainsuperior switching performance.These devices are well suited for low voltage andbattery powered applications where low in-line powerloss and fast switching are required.

*** Source Electronics: MOSFET N/P-CH 30V 7A/5A 8SOIC / Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC T/R

***ure Electronics: Dual N & P-Channel 30 V 0.028 Ohm Surface Mount PowerTrench Mosfet - SOIC-8

*** Stop Electro: Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:7A; Cont Current Id P Channel:5A; Current Id Max:7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance N Channel Max:28mohm; On State Resistance P Channel Max:52mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Pulse Current Idm N Channel 2:20A; Pulse Current Idm P Channel:20A; SMD Marking:FDS8958A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

***ical: Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R

***emi: 30V Dual N & P-Channel PowerTrench® MOSFET

***eco: 008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIE

***ark: TAPE REEL / SO8, DUAL NCH & PCH POWER TRENCH MOSFET

***el Electronic: SMALL SIGNAL BIPOLAR TRANSISTOR

***rchild Semiconductor: These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***et: Transistor MOSFET Array Dual N-CH 30V 6A 8-Pin DSO

***ponent Stockers USA: 5000 mA 30 V 2 CHANNEL N-CHANNEL Si SMALL SIGNAL MOSFET MS-012AA

***nell: MOSFET, N, 30V, SO-8; Transistor type:Enhancement; Voltage, Vds typ:30V; Current, Id cont:6A; Resistance, Rds on:0.035ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:1.6V; Case style:SOIC; Current, Idm pulse:24.0A; Resistance, Rds on @ Vgs = 4.5V:0.052ohm; Termination Type:SMD; Transistor polarity:N; Voltage, Vds:30V; Voltage, Vds max:30V

***(Formerly Allied Electronics): IRF7303PBF Dual N-channel MOSFET Transistor; 4.9 A; 30 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 30 V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC Tube

***fin: Transistor NPN Mos IRF7303/IRF7303PBF INTERNATIONAL RECTIFIER RoHS V=30 SO8

***roFlash: Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Po

***ark: Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:4.9A; Continuous Drain Current Id P Channel:-; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes

Market price

型號	製造商	描述	庫存	價格
FW4604-TL-2W DISTI # FW4604-TL-2WOSCT-ND	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2490In Stock	1000:$0.3741 500:$0.4676 100:$0.5915 10:$0.7720 1:$0.8800
FW4604-TL-2W DISTI # FW4604-TL-2WOSDKR-ND	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2490In Stock	1000:$0.3741 500:$0.4676 100:$0.5915 10:$0.7720 1:$0.8800
FW4604-TL-2W DISTI # FW4604-TL-2WOSTR-ND	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call	25000:$0.2838 12500:$0.2951 5000:$0.3065 2500:$0.3291
FW4604-TL-2W DISTI # FW4604-TL-2W	ON Semiconductor	Trans MOSFET N/P-CH 30V 6A/4.5A 8-Pin SOIC T/R - Tape and Reel (Alt: FW4604-TL-2W) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2959 5000:$0.2939 10000:$0.2909 15000:$0.2869 25000:$0.2799
FW4604-TL-2WX DISTI # FW4604-TL-2WX	ON Semiconductor	NCH+PCH 4.5V DRIVE SERIES - Tape and Reel (Alt: FW4604-TL-2WX) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0
FW4604-TL-2W DISTI # 30Y6375	ON Semiconductor	NCH+PCH 4.5V DRIVE SERIES / REEL	0	1:$0.9080 2500:$0.3070 5000:$0.2980
FW4604-TL-2W. DISTI # 29AC6426	ON Semiconductor	Transistor Polarity:N and P Complement,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):39mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.6V,Power Dissipation Pd:1.8W,Product Range:- RoHS Compliant: Yes	0	1:$0.9080 2500:$0.3070 5000:$0.2980
FW4604-TL-2W DISTI # 863-FW4604-TL-2W	ON Semiconductor	MOSFET NCH+PCH 4.5V DRIVE RoHS: Compliant	2501	1:$0.8500 10:$0.7040 100:$0.4540 1000:$0.3640
FW4604-TL-2WX DISTI # 863-FW4604-TL-2WX	ON Semiconductor	MOSFET NCH+PCH 4.5V DRIVE SERIES RoHS: Compliant	0
FW4604-TL-2W	ON Semiconductor	RoHS: Not Compliant	2450	1000:$0.3300 500:$0.3500 100:$0.3600 25:$0.3800 1:$0.4100
FW4604-TL-2WX	ON Semiconductor	RoHS: Not Compliant	520000	1000:$0.3600 500:$0.3700 100:$0.3900 25:$0.4100 1:$0.4400

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