FDT434P

Mfr. #:: FDT434P
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET SOT-223 P-CH -20V
生命週期:: 製造商新產品
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HTML Datasheet:: FDT434P Datasheet
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: E

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: SOT-223-4

通道數：: 1 Channel

晶體管極性：: P-通道

Vds - 漏源擊穿電壓：: 20 V

Id - 連續漏極電流：: 6 A

Rds On - 漏源電阻：: 50 mOhms

Vgs - 柵源電壓：: 8 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 3 W

配置：: 單身的

頻道模式：: 增強

商品名：: 動力戰壕

打包：: 捲軸

高度：: 1.8 mm

長度：: 6.5 mm

系列：: FDT434P

晶體管類型：: 1 P-Channel

類型：: MOSFET

寬度：: 3.5 mm

品牌：: 安森美半導體/飛兆半導體

正向跨導 - 最小值：: 6.5 S

秋季時間：: 30 ns

產品類別：: MOSFET

上升時間：: 15 ns

出廠包裝數量：: 4000

子類別：: MOSFET

典型關斷延遲時間：: 45 ns

典型的開啟延遲時間：: 8 ns

第 # 部分別名：: FDT434P_NL

單位重量：: 0.003951 oz

Tags: FDT434P, FDT434, FDT43, FDT4, FDT

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDT434P 描述

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 50mΩ

***ure Electronics: P-Channel 20 V 0.05 Ohm PowerTrench Mosfet - SOT-223

***ical: Trans MOSFET P-CH 20V 6A 4-Pin (3+Tab) SOT-223 T/R

*** Electronics: ON SEMICONDUCTOR - FDT434P - P CHANNEL MOSFET, -20V, 6A, SOT-223

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-223 ;RoHS Compliant: Yes

***rchild Semiconductor: This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

***emi: N-Channel Enhancement Mode Field Effect Transistor 30V, 2.5V Specified, 6.3A, 45mΩ

***ical: Trans MOSFET N-CH 30V 6.3A 4-Pin (3+Tab) SOT-223 T/R

***Yang: Trans MOSFET N-CH 30V 6.3A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6.3A; On Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-223 ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

***emi: N-Channel Enhancement Mode Field Effect Transistor 30V, 7.2A, 35mΩ

***Yang: Trans MOSFET N-CH 30V 7.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel

***ark: MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V; Power Dissipation:3W RoHS Compliant: Yes

***rchild Semiconductor: Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

***emi: N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ

***Yang: Trans MOSFET N-CH 30V 6.5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

***icroelectronics: N-Channel 30V - 0.039 Ohm - 4A - SOT-223 STripFET(TM) POWER MOSFET

***ure Electronics: N-Channel 30 V 0.05 Ohm Surface Mount STripFET II MosFet - SOT-223

*** Source Electronics: MOSFET N-CH 30V 6.5A SOT223 / Trans MOSFET N-CH 30V 6.5A 4-Pin(3+Tab) SOT-223 T/R

***ark: N CHANNEL MOSFET, 30V, 6.5A SOT-223, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1VRoHS Compliant: Yes

***nell: MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6.5A; On State Resistance @ Vgs = 4.5V: 60mohm; On State resistance @ Vgs = 10V: 50mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 26A; SMD Marking: N4NF03; Voltage Vds Typ: 30V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V

***ure Electronics: ZXMP4A16G Series 40 V 0.06 Ohm P-Channel Enhancement Mode MOSFET - SOT-223

***et: Trans MOSFET P-CH 40V 6.4A 4-Pin(3+Tab) SOT-223 T/R

***sible Micro: Transistor, FET P-CH, Enhance Mode, 40V, 6.4A, 2W, SOT-223

***ark: P CHANNEL MOSFET, -40V, 6.4A, SOT-223; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

***nell: MOSFET, P, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: 6.4A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 3.9W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Current Id Max: -6.4A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 60mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 3.9W; Pulse Current Idm: 21A; SMD Marking: ZXMP4A16; Termination Type: Surface Mount Device; Voltage Vds Typ: -40V; Voltage Vgs Max: -20V; Voltage Vgs Rds on Measurement: -10V; Voltage Vgs th Min: -1V

***itex: Transistor: N-MOSFET; unipolar; 40V; 7A; 0.05ohm; 2W; -55+150 deg.C; SMD; SOT223

***ure Electronics: Single N-Channel 40 V 3.9 W 18.2 nC Silicon Surface Mount Mosfet - SOT-223

***et: Trans MOSFET N-CH 40V 7A 4-Pin(3+Tab) SOT-223 T/R

***ark: N CHANNEL MOSFET, 40V, 7A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

***nell: MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 3.9W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Current Id Max: 7A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 50mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 3.9W; Pulse Current Idm: 22A; SMD Marking: ZXMN 4A06; Termination Type: Surface Mount Device; Voltage Vds Typ: 40V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V

Market price

型號	製造商	描述	庫存	價格
FDT434P DISTI # C1S541901395317	ON Semiconductor	MOSFETs RoHS: Compliant	183	4000:$0.2650
FDT434P DISTI # FDT434PCT-ND	ON Semiconductor	MOSFET P-CH 20V 6A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1In Stock	1:$0.7600
FDT434P DISTI # FDT434PTR-ND	ON Semiconductor	MOSFET P-CH 20V 6A SOT-223 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call	4000:$0.2683
FDT434P DISTI # FDT434PDKR-ND	ON Semiconductor	MOSFET P-CH 20V 6A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDT434P DISTI # FDT434P	ON Semiconductor	Trans MOSFET P-CH 20V 6A 4-Pin(3+Tab) SOT-223 T/R - Cut TR (SOS) (Alt: FDT434P) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 26
FDT434P DISTI # FDT434P	ON Semiconductor	Trans MOSFET P-CH 20V 6A 4-Pin(3+Tab) SOT-223 T/R (Alt: FDT434P) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
FDT434P DISTI # 47T5052	ON Semiconductor	MOSFET Transistor, P Channel, 6 A, -20 V, 0.04 ohm, -4.5 V, -600 mV RoHS Compliant: Yes	0
FDT434P DISTI # 67R2084	ON Semiconductor	MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-600mV,Power Dissipation Pd:3W RoHS Compliant: Yes	0	1:$0.2410 4000:$0.2370 8000:$0.2320 16000:$0.2280 24000:$0.2240
FDT434P DISTI # 38C7187	ON Semiconductor	P CHANNEL MOSFET, -20V, 6A, SOT-223,Transistor Polarity:P Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-600mV RoHS Compliant: Yes	0	1:$0.7060 25:$0.5870 50:$0.4860 100:$0.3840 250:$0.3600 500:$0.3340 1000:$0.3100
FDT434P	ON Semiconductor	RoHS: Not Compliant	237	1000:$0.3200 500:$0.3300 100:$0.3500 25:$0.3600 1:$0.3900
FDT434P	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1442136	1000:$0.3200 500:$0.3300 100:$0.3500 25:$0.3600 1:$0.3900
FDT434P	ON Semiconductor	P-Channel 20 V 0.05 Ohm PowerTrench Mosfet - SOT-223 RoHS: Compliant	68000Reel	4000:$0.2150
FDT434P DISTI # 512-FDT434P	ON Semiconductor	MOSFET SOT-223 P-CH -20V RoHS: Compliant	0	1:$0.6300 10:$0.5220 100:$0.3370 1000:$0.2700 4000:$0.2280 8000:$0.2190 24000:$0.2110
FDT434P_Q DISTI # 512-FDT434P_Q	ON Semiconductor	MOSFET SOT-223 P-CH -20V RoHS: Not compliant	0
FDT434P	Fairchild Semiconductor Corporation		150
FDT434P DISTI # 6710772	ON Semiconductor	MOSFET P-CHANNEL 20V 6A SOT223, PK	405	5:£0.6660 25:£0.3680 100:£0.2480 250:£0.2300 500:£0.2220
FDT434P DISTI # 6710772P	ON Semiconductor	MOSFET P-CHANNEL 20V 6A SOT223, RL	5055	25:£0.3680 100:£0.2480 250:£0.2300 500:£0.2220
FDT434P	Fairchild Semiconductor Corporation		2745
FDT434P DISTI # 1611577	ON Semiconductor	MOSFET, P RoHS: Compliant	0	5:£0.4390 25:£0.4090 100:£0.2500 250:£0.2300 500:£0.2110
FDT434P DISTI # 2438462	ON Semiconductor	MOSFET, P, FULL REEL RoHS: Compliant	0	4000:$0.3620 20000:$0.3440 40000:$0.3350
FDT434P DISTI # 1611577RL	ON Semiconductor	MOSFET, P RoHS: Compliant	0	1:$0.9970 10:$0.8270 100:$0.5340 1000:$0.4280 4000:$0.3620 8000:$0.3470 24000:$0.3340 48000:$0.3280
FDT434P DISTI # 1611577	ON Semiconductor	MOSFET, P RoHS: Compliant	1217	1:$0.9970 10:$0.8270 100:$0.5340 1000:$0.4280 4000:$0.3620 8000:$0.3470 24000:$0.3340 48000:$0.3280

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