FGH60N60SFDTU

Mfr. #:: FGH60N60SFDTU
製造商:: ON Semiconductor / Fairchild
描述:: IGBT Transistors N-Ch/ 60A 600V FS
生命週期:: 製造商新產品
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更多信息:: FGH60N60SFDTU 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-247AB-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 600 V

最大柵極發射極電壓：: 20 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

系列：: FGH60N60SFD

打包：: 管子

連續集電極電流 Ic 最大值：: 120 A

高度：: 20.6 mm

長度：: 15.6 mm

寬度：: 4.7 mm

品牌：: 安森美半導體/飛兆半導體

產品類別：: IGBT晶體管

出廠包裝數量：: 450

子類別：: IGBT

單位重量：: 0.225401 oz

Tags: FGH60N60SFDT, FGH60N60SFD, FGH60N60SF, FGH60N60S, FGH60N60, FGH60N, FGH6, FGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGH60N60SFDTU 描述

*** Source Electronics: IGBT 600V 60A 378W TO247 / Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AB

***ure Electronics: IGBT Transistors N-Ch/ 60A 600V FS

***ark: Fspigbt To247 60A 600V Rohs Compliant: Yes

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essentia

***ical: Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247AB Rail

***ure Electronics: FGH60N60UFD Series 600 V 120 A Flange Mount Field Stop IGBT - TO-247

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:298W

***ical: Trans IGBT Chip N-CH 600V 100A 360000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: 50 A, 600 V field stop trench gate IGBT with Ultrafast diode

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247

***el Electronic: IGBT Transistors 50A 600V FST IGBT Ultrafast Diode

***ponent Stockers USA: 100 A 600 V N-CHANNEL IGBT TO-247

***et: STMICROELECTRONICS STGW50H60DF IGBTS

*** Source Electronics: Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247

***ure Electronics: FGH40N60UFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247

***-Wing Technology: FAIRCHILD SEMICONDUCTOR FGH40N60UFDTU IGBT Single Transistor, General Purpose, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 Pins

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,W DIODE,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W

***ow.cn: Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***ment14 APAC: IGBT+ DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:187W

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.95 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 187 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

***ical: Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube

*** Electronics: STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247

***ser: IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 30 Amp

***(Formerly Allied Electronics): Transistor IGBT N-Ch 600V 60A TO247

***nell: IGBT, 600V, 20A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ical: Trans IGBT Chip N=-CH 600V 40A 166000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: IKW20N60T Series 600 V 40 A Through Hole TRENCHSTOP IGBT -PG-TO247-3

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***nell: IGBT, N, 600V, 20A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.05V; Power Dissipation Pd: 166W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; Operating Temper

***ark: IGBT, N, 600V, 20A, TO-247; Transistor Type:IGBT; Voltage, Vces:600V; Current, Ic Continuous a Max:20A; Voltage, Vce Sat Max:2.05V; Power Dissipation:166W; Case Style:TO-247; Termination Type:Through Hole; Transistor Polarity:N; RoHS Compliant: Yes

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 20 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 166 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

FGH60N60SFDTU 更多信息

Field Stop IGBTs: ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

Market price

型號	製造商	描述	庫存	價格
FGH60N60SFDTU-F085 DISTI # V99:2348_14141035	ON Semiconductor	N-CH/ 60A 600V FS IGBT	448	1000:$3.6170 500:$4.1010 250:$4.5280 100:$4.7360 25:$5.4470 10:$5.7130 1:$6.9454
FGH60N60SFDTU DISTI # V36:1790_06359210	ON Semiconductor	Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3+Tab) TO-247AB Rail	0
FGH60N60SFDTU-F085 DISTI # FGH60N60SFDTU-F085OS-ND	ON Semiconductor	IGBT 600V 60A 378W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	450In Stock	900:$4.3464 450:$4.7670 25:$5.7484 10:$6.0290 1:$6.6700
FGH60N60SFDTU DISTI # FGH60N60SFDTU-ND	ON Semiconductor	IGBT 600V 120A 378W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	354In Stock	2700:$2.8127 900:$3.5019 450:$3.9027 25:$4.7464 10:$5.0210 1:$5.5900
FGH60N60SFDTU-F085 DISTI # 31920285	ON Semiconductor	N-CH/ 60A 600V FS IGBT	448	1000:$3.8883 500:$4.4086 250:$4.8676 100:$5.0912 25:$5.8555 10:$6.1415 2:$6.7876
FGH60N60SFDTU DISTI # FGH60N60SFDTU	ON Semiconductor	Trans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-247AB Tube (Alt: FGH60N60SFDTU) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 250	1000:€2.2900 500:€2.3900 100:€2.4900 50:€2.5900 25:€2.6900 10:€2.8900 1:€3.0900
FGH60N60SFDTU DISTI # FGH60N60SFDTU	ON Semiconductor	Trans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-247AB Tube - Rail/Tube (Alt: FGH60N60SFDTU) RoHS: Compliant Min Qty: 30 Container: Tube	Americas - 5532	300:$2.3900 90:$2.4900 150:$2.4900 30:$2.5900 60:$2.5900
FGH60N60SFDTU DISTI # FGH60N60SFDTU	ON Semiconductor	Trans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-247AB Tube - Bulk (Alt: FGH60N60SFDTU) Min Qty: 113 Container: Bulk	Americas - 0	1130:$2.6900 226:$2.7900 339:$2.7900 565:$2.7900 113:$2.8900
FGH60N60SFDTU DISTI # FGH60N60SFDTU	ON Semiconductor	Trans IGBT Chip N-CH 600V 120A 3-Pin(3+Tab) TO-247AB Tube (Alt: FGH60N60SFDTU) RoHS: Compliant Min Qty: 450 Container: Tube	Asia - 0	22500:$3.2936 11250:$3.3485 4500:$3.4640 2250:$3.5877 1350:$3.7206 900:$3.8636 450:$4.0182
FGH60N60SFDTU_F085 DISTI # FGH60N60SFDTU-F085	ON Semiconductor	Trans IGBT Chip N-CH 600V 120A 3-Pin TO-247 Tube - Bulk (Alt: FGH60N60SFDTU-F085) Min Qty: 85 Container: Bulk	Americas - 0	850:$3.5900 425:$3.6900 85:$3.7900 170:$3.7900 255:$3.7900
FGH60N60SFDTU_F085 DISTI # FGH60N60SFDTU-F085	ON Semiconductor	Trans IGBT Chip N-CH 600V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGH60N60SFDTU-F085) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	4500:$3.1900 2700:$3.2900 450:$3.3900 900:$3.3900 1800:$3.3900
FGH60N60SFDTU_F085 DISTI # 70AC7075	ON Semiconductor	Trans IGBT Chip N-CH 600V 120A 3-Pin TO-247 Tube - Bulk (Alt: 70AC7075) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	500:$3.7400 250:$3.8500 100:$4.5400 50:$4.8500 25:$5.1800 10:$5.6700 1:$6.2700
FGH60N60SFDTU DISTI # 07R8549	ON Semiconductor	FSPIGBT TO247 60A 600V / TUBE	0	2500:$2.8800 1000:$2.9800 500:$3.3800 100:$3.6800 10:$4.3900 1:$5.2900
FGH60N60SFDTU. DISTI # 98AC1366	ON Semiconductor	FSPIGBT TO247 60A 600V ROHS COMPLIANT: YES	0	300:$2.4200 62:$2.5200 1:$2.6200
FGH60N60SFDTU-F085 DISTI # 70AC7075	ON Semiconductor	IGBT, SINGLE, AEC-Q101, 600V, TO247AB,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:378W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247AB,No. of RoHS Compliant: Yes	278	500:$4.0700 250:$4.1900 100:$4.8600 50:$5.1700 25:$5.5000 10:$5.9800 1:$6.5600
FGH60N60SFDTU DISTI # 512-FGH60N60SFDTU	ON Semiconductor	IGBT Transistors N-Ch/ 60A 600V FS RoHS: Compliant	397	1:$5.3100 10:$4.5200 100:$3.9100 250:$3.7100 500:$3.3300
FGH60N60SFDTU-F085 DISTI # 512-FGH60N60SFDTF085	ON Semiconductor	IGBT Transistors N-Ch 60A 600V FS IGBT RoHS: Compliant	433	1:$6.3500 10:$5.7400 25:$5.4700 100:$4.7500 250:$4.5400 500:$4.1400 1000:$3.6000
FGH60N60SFDTU	ON Semiconductor	RoHS: Not Compliant	3150	1000:$2.9300 500:$3.0900 100:$3.2200 25:$3.3500 1:$3.6100
FGH60N60SFDTU-F085	Fairchild Semiconductor Corporation	RoHS: Not Compliant	1441	1000:$3.9100 500:$4.1100 100:$4.2800 25:$4.4700 1:$4.8100
FGH60N60SFDTU DISTI # 7599285	ON Semiconductor	TRANSISTOR IGBT N-CH 600V 120A TO247AB, EA	57	300:£2.3600 150:£2.5300 50:£2.7100 10:£2.9700 1:£3.6100
FGH60N60SFDTU-F085 DISTI # 2829471	ON Semiconductor	IGBT, SINGLE, AEC-Q101, 600V, TO247AB RoHS: Compliant	278	250:$6.2600 100:$6.9200 50:$7.8900 10:$8.7700 5:$10.1200 1:$11.6100
FGH60N60SFDTU-F085 DISTI # 2829471	ON Semiconductor	IGBT, SINGLE, AEC-Q101, 600V, TO247AB	278	100:£3.7000 50:£3.9900 10:£4.2700 5:£4.9500 1:£5.4500
FGH60N60SFDTU DISTI # XSKDRABV0037685	ON SEMICONDUCTOR	SmallSignalBipolarTransistor,0.5AI(C),45VV(BR)CEO,1-Element,NPN,Silicon,TO-236 RoHS: Compliant	360 in Stock0 on Order	360:$3.7700 124:$4.0300

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